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IRF3710PBF

N-Channel MOSFET, 100V, 57A, 23mOhm, TO-220AB

5709

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Pieza del fabricante：

IRF3710PBF

Paquete：

TO-220AB (10.54 x 4.69 x 15.24 mm)

Marca：
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Descripción

Productos

The IRF3710PBF from Infineon is an N-channel HEXFET power MOSFET rated at 100V, 57A, and 23mOhm RDS(on). In TO-220AB package, it provides high-efficiency switching for DC-DC converters, motor drives, and battery-powered systems.

Especificaciones

VDSS 100V
ID 57A @ TC=25C
RDS(on) 23mOhm max @ VGS=10V
Qg 130nC typical
PD 200W @ TC=25C
EAS 1060mJ typical
Paquete TO-220AB

Características

  • Ultra-low 23mOhm on-resistance
  • Fully avalanche rated
  • Dynamic dv/dt rated
  • 175C max junction temperature
  • Lead-free, RoHS compliant

Aplicaciones

  • DC-DC converters and synchronous rectification
  • Battery-powered motor drives
  • UPS systems and inverters
  • Solar inverter and battery management

The IRF3710PBF is a high-performance N-channel HEXFET power MOSFET from Infineon with ultra-low 23mOhm on-resistance. At 100V and 57A continuous current, it excels in high-efficiency switching where low conduction losses are critical. The 200W dissipation rating and 175C max junction temperature provide excellent thermal margin. Fully avalanche rated for reliable operation under inductive load conditions.

The IRF3710PBF is an N-channel enhancement-mode vertical power MOSFET. (1) Off: Blocks up to 100V with 250uA max leakage. (2) On: VGS=10V creates 23mOhm channel, enabling 57A with only 2.4W conduction loss. (3) Switching: 130nC gate charge requires sufficient gate driver current. (4) Avalanche: Absorbs up to 1060mJ single-pulse avalanche energy from inductive kickback. (5) Body Diode: Integral diode provides reverse conduction with 1.2V forward drop.

Pin Nombre Función
1 Puerta Gate control
2 Drenaje Drain (tab)
3 Fuente Fuente
  • DC-DC converters: 23mOhm minimizes conduction losses in synchronous buck for server/telecom
  • Motor drives: 57A drives large BLDC motors in EVs and robotics
  • UPS inverters: 100V and fast switching for half-bridge/full-bridge topologies
  • Battery management: High current switching for energy storage systems
Fabricante Número de pieza Paquete Notas
Infineon IRF3710ZPBF TO-220AB Logic level gate
Infineon IRFP3710PBF TO-247 Higher dissipation
Vishay IRF3710STRLPBF D2PAK SMD version
Infineon IRFB4110PBF TO-220AB 100V, 3.7mOhm, 180A
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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