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BAT54J

30V Schottky diode, 200mA, 0.32V VF, SOD-323, fast switching

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Pieza del fabricante：

BAT54J

Paquete：

SOD-323 (SC-90) (1.7 x 1.25 mm)

Marca：
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Descripción

Productos

The BAT54J from NXP Semiconductors is a Schottky barrier diode featuring low forward voltage drop and fast switching speed in a compact SOD-323 (SC-90) package. With 30V reverse voltage and 200mA continuous forward current, it is ideal for low-voltage rectification and protection in space-constrained applications.

Especificaciones

Reverse Voltage (VR) 30 V
Forward Current (IF) 200 mA (continuous)
Forward Voltage (VF) 0.32 V @ 1mA; 0.6 V @ 100mA
Reverse Current (IR) 1 μA @ 25V
Junction Capacitance 3 pF @ 1V, 1MHz
Reverse Recovery Time Negligible (Schottky)
Paquete SOD-323 (SC-90)
Temperatura de funcionamiento -65°C to +150°C (Tj)

Características

  • Very low forward voltage drop of 0.32V at 1mA for minimal power loss
  • Fast switching with negligible reverse recovery time
  • Compact SOD-323 surface-mount package for high-density PCBs
  • Low junction capacitance of 3pF for high-frequency applications
  • Guard-ring protected for ESD robustness

Aplicaciones

  • Low-voltage rectification in DC-DC converter outputs
  • Reverse polarity protection in battery-powered devices
  • Signal clamping and ESD protection circuits
  • OR-ing diode in redundant power supply paths
  • Catch diode in switching regulator circuits

The BAT54J from NXP Semiconductors is a single Schottky barrier diode designed for low-forward-voltage rectification and high-speed switching applications. With a reverse voltage rating of 30V and continuous forward current of 200mA, it features a very low forward voltage drop of 0.32V at 1mA (0.6V at 100mA), minimizing power dissipation in low-voltage circuits. The Schottky construction provides negligible reverse recovery time, making it ideal for high-frequency switching applications. Housed in the tiny SOD-323 (SC-90) surface-mount package, it is well-suited for space-constrained portable and handheld electronics where both performance and board area are critical.

The BAT54J operates as a Schottky barrier diode using a metal-semiconductor junction rather than the P-N junction of conventional diodes. (1) The Schottky barrier is formed between the metal contact (typically platinum or titanium-tungsten) and the N-type silicon, creating a junction with a lower barrier height than a P-N diode. This results in the lower forward voltage drop of 0.32V at 1mA, as less energy is required for electrons to cross the barrier. (2) The majority-carrier conduction mechanism means there is no stored charge in the junction during forward bias, resulting in negligible reverse recovery time when the diode switches from forward to reverse bias. This makes the BAT54J significantly faster than P-N diodes in switching applications. (3) The guard ring structure around the active area provides protection against voltage transients and improves ESD robustness.

Pin Nombre Función
1 Ánodo Positive terminal (current input)
2 Cátodo Negative terminal (current output, marked with band)
  • Low-voltage rectification in DC-DC converter output stages with minimal voltage drop
  • Reverse polarity protection for battery-powered devices using series diode configuration
  • Signal clamping and protection circuits for I/O lines in digital systems
  • Power supply OR-ing in redundant or battery-backup systems
  • Free-wheeling (catch) diode in relay and solenoid driver circuits
Modelo Fabricante Diferencia clave
BAT54A NXP Common anode dual Schottky, SOT-23
BAT54C NXP Common cathode dual Schottky, SOT-23
BAT54S NXP Series dual Schottky, SOT-23
RB521S30T1G onsemi 30V Schottky, SOD-523
1PS76SB40 NXP 40V Schottky, SOD-323
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