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AT45DB041E-SSHN-T

4Mbit DataFlash, dual SRAM buf, SPI 85MHz, 1.65-3.6V, SOIC-8, byte-write, 400nA PD

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Pieza del fabricante：

AT45DB041E-SSHN-T

Paquete：

SOIC-8 208mil (3.81 x 4.80 x 1.27 mm)

Descripción

Productos

The AT45DB041E-SSHN-T from Microchip Technology (formerly Atmel) is a 4-Mbit (512 KB) DataFlash serial NOR flash memory with dual SRAM buffers in an 8-pin SOIC-N package. It operates from 1.65 V to 3.6 V with SPI interface speeds up to 85 MHz, featuring page-level erase, byte-write capability, and ultra-deep power-down mode at 400 nA.

Especificaciones

Memory Density	4 Mbit (512 KB)
Memory Organization	2048 pages x 256 bytes (with 2 buffers)
Interface	SPI (Mode 0 and 3)
Max Clock Frequency	85 MHz
Tensión de alimentación	1.65 V to 3.6 V
Page Program Time	3 ms typical
Deep Power-Down Current	0.4 uA typical
Read Current	6 mA typical
Temperatura de funcionamiento	-40°C to +85°C

Características

Dual SRAM buffer architecture for simultaneous read/write operations
Byte-write provides serial EEPROM functionality in NOR Flash
Ultra-deep power-down mode at 400 nA for battery-powered applications
256-byte page erase for energy-efficient data logging
Comprehensive security with unique ID, sector protection, and lockdown
Product longevity commitment to 2034
Flexible page size: 256 or 264 bytes per page
More than 100,000 program/erase cycles per page

Aplicaciones

Firmware storage for microcontrollers lacking internal flash
Data logging in industrial and sensor nodes
Configuration management and calibration storage
Voice and image storage in embedded UI applications

Introducción del producto:AT45DB041E-SSHN-T Presentación del producto

The AT45DB041E-SSHN-T from Microchip Technology is a 4-Mbit DataFlash serial NOR flash memory device designed for code and data storage in resource-constrained embedded systems. Unlike standard SPI flash, the DataFlash architecture features dual SRAM buffers that enable simultaneous read and write operations – one buffer can receive new data from the SPI bus while the other is being programmed into the main memory array. This dual-buffer architecture significantly improves system throughput for data logging applications. The device supports byte-level write operations, providing serial EEPROM-like functionality within a NOR flash device, eliminating the need for separate EEPROM and flash chips. Operating from 1.65 V to 3.6 V with SPI clock speeds up to 85 MHz, it achieves read throughput of up to 42.5 MB/s. The ultra-deep power-down mode draws only 400 nA, extending battery life in always-on sensor nodes. Microchip has committed to product longevity through 2034.

Principio de funcionamiento:AT45DB041E-SSHN-T Principio de funcionamiento

The AT45DB041E-SSHN-T operates through three functional blocks: (1) The SPI interface handles all communication using standard SPI Mode 0 or Mode 3 with chip select (CS), serial clock (SCK), serial input (SI), and serial output (SO). An 8-bit opcode precedes address and data fields in each command sequence. The interface supports continuous read operations without releasing CS, enabling high-throughput code execution. (2) The memory array is organized as 2048 pages of 256 bytes each (configurable to 264 bytes with extra bytes). Programming is performed through the dual SRAM buffers: data is first written into Buffer 1 or Buffer 2 via SPI, then a buffer-to-main-memory transfer command programs the page with built-in erase. This allows the host to continue writing to the other buffer during programming, achieving near-zero wait-time operation. (3) The power management subsystem supports active read (6 mA), standby (25 uA), and ultra-deep power-down (400 nA) modes. The byte-write feature allows individual bytes to be modified without page-level erase, implemented through an internal read-modify-write sequence that is transparent to the host.

Descripción de la clavija:AT45DB041E-SSHN-T Definición y funciones de las clavijas

Pin No.	Nombre de la clavija	Función
1	CS	Chip select (active low)
2	SO	Serial data output
3	WP	Write protect (active low)
4	VSS	Suelo
5	SI	Entrada de datos serie
6	SCK	Serial clock
7	/HOLD or RESET	Hold or reset (active low)
8	VCC	Supply voltage (1.65-3.6 V)

Application Scenarios:In which products and applications isAT45DB041E-SSHN-T usado

Industrial sensor data loggers where dual SRAM buffers enable continuous write-while-program operation and 400 nA ultra-deep power-down extends battery life to years
MCU firmware storage with XIP (execute-in-place) capability using 85 MHz SPI for fast boot and code execution without shadow RAM
Configuration and calibration data storage leveraging byte-write EEPROM emulation for frequent small-data updates
Portable medical devices requiring reliable non-volatile storage with low standby power and Microchip longevity commitment to 2034

Alternative Models:What chips are recommended as replacements for AT45DB041E-SSHN-T

Modelo	Marca	Densidad	Interface	Paquete
AT45DB041B-SSHN-T	Microchip	4 Mbit	SPI 66 MHz	SOIC-8
AT45DB081E-SSHN-T	Microchip	8 Mbit	SPI 85 MHz	SOIC-8
W25Q40CLSNIG	Winbond	4 Mbit	SPI 80 MHz	SOIC-8
MX25L4006EM1I-12G	Macronix	4 Mbit	SPI 120 MHz	SOIC-8
SST25VF040B-50-4I-SAE	Microchip	4 Mbit	SPI 50 MHz	SOIC-8