B82498B1272J000

2.7µH RF inductor, ±5%, Q=20, 120mA Isat, 2Ω DCR, 200MHz SRF, SIMID 0805

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Manufacturer Part：

B82498B1272J000

Package：

SIMID 0805 (2.2 x 1.45 mm)

Brand：

Product Categories：

Insulated Gate Bipolar Transistors (IGBT), Integrated Circuits ICs

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Description

Product Overview

The B82498B1272J000 from TDK/EPCOS is a 2.7µH SMD inductor from the SIMID 0805-B series. With ±5% tolerance, Q value of 20, and 120mA saturation current, it is designed for high-frequency RF applications including impedance matching, resonant circuits, and filter networks in wireless communication systems.

Key Specifications

Inductance	2.7µH
Tolerance	±5% (J)
Test Frequency	7.96 MHz
Q Value	20 (minimum at test frequency)
Saturation Current (Isat)	120 mA
DC Resistance (DCR)	2Ω (maximum)
Self-Resonant Frequency (SRF)	200 MHz (minimum)
Operating Temperature	-40°C to +125°C
Package	0805 (2012 Metric, 2.2 x 1.45 mm)
Mounting	Surface Mount

Features

2.7µH inductance with ±5% precision tolerance
High Q value: 20 minimum at 7.96 MHz
High self-resonant frequency: 200MHz minimum
Compact SIMID 0805 package for RF applications
120mA saturation current for signal-level applications
Low profile: 1.45mm maximum height
Suitable for high-frequency resonant and matching circuits
RoHS compliant

Applications

RF impedance matching networks
Wireless communication resonant circuits
GPS and Bluetooth filter networks
Multimedia device RF front-ends
Antenna tuning circuits
High-frequency signal filtering

Product Introduction:B82498B1272J000 Product Introduction

The B82498B1272J000 from TDK/EPCOS is a 2.7µH surface-mount inductor from the SIMID 0805-B series, specifically designed for high-frequency RF applications. The device features ±5% tolerance (J grade) for precision impedance matching and filter design. The Q value of 20 at 7.96 MHz and self-resonant frequency of 200MHz minimum make it suitable for RF circuits operating in the HF and VHF ranges. The SIMID (Surface Mount Integrated Device) 0805 package offers a compact 2.2 x 1.45mm footprint with a low 1.45mm profile. The inductor uses a wire-wound construction on a ceramic core, providing higher Q values than multilayer alternatives at the expense of slightly larger dimensions. The 120mA saturation current suits signal-level RF applications rather than power conversion.

Working Principle:B82498B1272J000 Working Principle

The B82498B1272J000 operates through electromagnetic energy storage in RF circuits:

1. Inductance Mechanism: A precision-wound copper coil on a ceramic core provides the 2.7µH inductance. The ceramic core’s low permeability ensures high self-resonant frequency (200MHz) by minimizing parasitic capacitance. The ±5% tolerance is achieved through precise winding control and laser or mechanical trimming.

2. Q Factor: The quality factor Q = ωL/R represents the ratio of stored energy to dissipated energy per cycle. Q=20 at 7.96MHz means the inductor stores 20 times more energy than it dissipates per cycle. The wire-wound construction on ceramic core provides higher Q than multilayer inductors because the winding has lower AC resistance than printed traces.

3. Self-Resonant Frequency: At 200MHz, the inductor’s parasitic capacitance (inter-winding capacitance) resonates with the inductance, creating a self-resonant frequency. Below this frequency, the device behaves as an inductor; above it, the device becomes capacitive. The 200MHz SRF ensures the inductor remains inductive throughout the intended operating frequency range (up to ~100MHz).

Pin Description:B82498B1272J000 Pin Definition and Functions

Pin	Name	Type	Function
1	Terminal 1	Passive	Inductor terminal (no polarity)
2	Terminal 2	Passive	Inductor terminal (no polarity)

Application Scenarios:In which products and applications isB82498B1272J000 used

RF matching: ±5% tolerance and Q=20 enable precise impedance matching networks in RF power amplifiers and antenna tuners at 13.56MHz (NFC) and 27MHz (ISM band)
Resonant circuits: 2.7µH with 200MHz SRF suits LC tank circuits in wireless charging (6.78MHz), AM/FM radio, and short-range radio links
GPS/Bluetooth: High Q value provides sharp filter response in bandpass and lowpass filter networks for GPS L1 (1.575GHz) and Bluetooth (2.4GHz) front-ends
Multimedia devices: SIMID 0805 compact footprint for RF filtering in smartphones, tablets, and wireless audio devices where space is constrained

Alternative Models:What chips are recommended as replacements for B82498B1272J000

Manufacturer	Part Number	Package	Notes
TDK/EPCOS	B82498B1272K000	SIMID 0805	±10% tolerance version
Coilcraft	0805CS-272XJLC	0805	2.7µH, ±5%, Q=45
Murata	LQG15HSR27J02D	0402	2.7µH, ±5%, multilayer
Taiyo Yuden	HK1005R27J-T	0402	0.27µH, ±5%, multilayer
Johanson	L-07C2R7JPM	0805	2.7µH, ±5%, RF inductor
Vishay	ILSB0805TEER27K	0805	2.7µH, ±10%, wirewound