نظرة عامة على المنتج
The VEMD8080 from Vishay Semiconductors is a high-speed, high-sensitivity silicon PIN photodiode with enhanced visible light sensitivity in an ultra-low-profile 0.48mm SMD-8 top-view package. With a 4.5mm2 active area, 28uA reverse light current at 850nm, 70ns response time, and +/-65 degree half-sensitivity angle, it is designed for wearable and high-speed photodetection.
المواصفات الرئيسية
| Active Area | 4.5 mm2 |
| ذروة الطول الموجي | 850 nm |
| Spectral Range | 350 nm to 1100 nm |
| Reverse Light Current | 28 uA (typ @ 850nm, 1mW/cm2) |
| Reverse Dark Current | 0.2 nA (typ @ VR=10V) |
| Rise/Fall Time | 70 ns (typ @ VR=10V) |
| Half-Sensitivity Angle | +/-65 deg |
| Diode Capacitance | 47 pF @ VR=0V; 17 pF @ VR=3V |
| Reverse Voltage | 20 V (max) |
| درجة حرارة التشغيل | -40 to +85 C |
| الحزمة | SMD-8 (4.8×2.5×0.48mm) |
الميزات
- 4.5mm2 large radiant sensitive area
- Enhanced sensitivity for visible light
- Ultra-low profile: 0.48mm height
- Fast response: 70ns rise/fall time
- Wide viewing angle: +/-65 deg
- Broad spectral range: 350-1100nm
- Low dark current: 0.2nA typical
- ESD protection: +/-2kV HBM
التطبيقات
- Wearable health monitoring
- Ambient light sensing
- High-speed photodetection
- Proximity sensing
- Pulse oximetry