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IRF1404PBF

N-channel MOSFET, 40V 202A, 4mOhm, TO-220

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IRF1404PBF

الحزمة ： الحزمة

TO-220-3

العلامة التجارية ： العلامة التجارية
فئات المنتجات:：فئات المنتجات
الالتزام بالجودة
الشحن والدفع
الخدمة والتغليف
دليل المنتج
توصيات أخرى قد تكون مهتماً بها.

MCP2562FD-E/MF

10M08SAM153I7G

KSZ8794CNXIC

TH8056KDC-AAA-014-RE

LT1963AEQ#PBF

PIC24FJ64GA006-I/PT

EN5335QI

DRV8301DCAR

الوصف

نظرة عامة على المنتج

The IRF1404PBF from Infineon is a high-current N-channel MOSFET rated at 40V/202A with extremely low 4mOhm on-resistance in TO-220 package for high-power DC switching applications.

المواصفات الرئيسية

الحزمة TO-220-3

الميزات

  • See datasheet for complete specifications
  • Industry-standard package

التطبيقات

  • Industrial control
  • Consumer electronics
  • Communication equipment
  • Automotive electronics

The IRF1404PBF from Infineon is a high-current N-channel MOSFET rated at 40V/202A with extremely low 4mOhm on-resistance in TO-220 package for high-power DC switching applications.

The IRF1404PBF is an N-channel power MOSFET from Infineon (formerly International Rectifier) in TO-220, rated at 40V VDSS, 202A ID, and 4mOhm RDS(on) at VGS=10V. This is an extreme low-RDS(on) device designed for high-current, low-voltage switching applications. The 4mOhm RDS(on) is achieved using Infineon’s stripe trench MOS technology: the gate electrode is formed as vertical trenches in the silicon, with the current flowing vertically through thousands of parallel MOSFET cells. At ID=100A, the conduction loss is P = I2 x RDS(on) = 1002 x 0.004 = 40W, requiring a substantial heatsink. The TO-220 package provides 0.5C/W junction-to-case thermal resistance; with a 0.5C/W heatsink, the thermal budget at 100A is: Tj = 40W x (0.5 + 0.5 + 0.1) = 44C above ambient, well within the 175C maximum. The gate charge is Qg = 160nC at VGS=10V, requiring a gate driver capable of sourcing/sinking at least 1.6A for 100ns switching times. The switching energy (Eon + Eoff) is approximately 50uJ at 100A, producing 5W of switching loss at 100kHz. The device is commonly used in parallel pairs for even lower RDS(on): two IRF1404 in parallel provide 2mOhm effective resistance. The internal freewheeling body diode has trr = 100ns, making it suitable for half-bridge motor drives without external Schottky diodes. The -PBF suffix specifies lead-free. Applications include: DC motor drives, battery disconnect switches, welding machine inverters, and automotive 12V power switching.

دبوس الاسم النوع الوظيفة
1 G المدخلات Gate (driven by gate driver, VGS threshold 2-4V, max +/-20V)
2 D الطاقة Drain (connects to load, 40V VDSS rating, low-side switch)
3 S الطاقة Source (connects to ground, current return path, tab connected internally)
  • Industrial control
  • Consumer electronics
  • Communication equipment
  • Automotive electronics
    • الشركة المصنعة رقم الجزء الحزمة الملاحظات
    إنفينيون IRF1404PBF TO-220 Same device, Infineon brand
    إنفينيون IRF1404ZPBF TO-220 Lower RDS(on) version (3.6mOhm vs 4mOhm)
    إنفينيون IRF3205PBF TO-220 110A 8mOhm, classic alternative, higher voltage
    على شبه NTMFS4C05N DPAK 40V 100A 3.2mOhm, SMD alternative
    فيشاي SUP75N06-08 TO-220 60V 75A 8mOhm, higher voltage alternative
    قطع الغيار الموصى بها

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    العلامة التجارية:

    الحزمة:

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    متوفر في المخزون:
    5578pcs

    دورة الشحن 3 ~ 7 أيام
    الحد الأدنى للطلب هو 1

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    متوفر في المخزون:
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    متوفر في المخزون:
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    دورة الشحن 3 ~ 7 أيام
    الحد الأدنى للطلب هو 1

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    IRF7413TRPBF

    30V 13A N-ch MOSFET, 11mOhm RDS(on), SO-8, ultra-low on-resistance

    العلامة التجارية:

    الحزمة:

    SO-8 (5.0 x 6.2 x 1.75mm)
    متوفر في المخزون:
    14862pcs

    دورة الشحن 3 ~ 7 أيام
    الحد الأدنى للطلب هو 1

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    IRFB3077PBF

    N-ch 75V 210A 2.8mOhm power MOSFET, TO-220, ultra-low RDS(on) for high-current switching

    العلامة التجارية:

    الحزمة:

    TO-220AB (15.6 x 10.4 x 4.6mm)
    متوفر في المخزون:
    3500pcs

    دورة الشحن 3 ~ 7 أيام
    الحد الأدنى للطلب هو 1

    انتقل إلى الاستفسار

    IRF3205STRLPBF

    N-ch 55V 110A 8mOhm power MOSFET, D2PAK, HEXFET, fully avalanche rated

    العلامة التجارية:

    الحزمة:

    D2PAK (TO-263-2), 10.67 x 9.65 x 4.83mm
    متوفر في المخزون:
    13535pcs

    دورة الشحن 3 ~ 7 أيام
    الحد الأدنى للطلب هو 1

    انتقل إلى الاستفسار
    ضمان الجودة

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    Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China

     

    الشحن والدفع

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    Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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    Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
     

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