نظرة عامة على المنتج
The AON7403 from Alpha & Omega Semiconductor is a 30 V P-channel enhancement-mode MOSFET in a compact DFN 3×3-8L package. It features 18 mOhm on-resistance at VGS=-10V and -29 A drain current, making it suitable for load switching and PWM applications requiring low conduction losses in a small footprint.
المواصفات الرئيسية
| النوع | P-Channel Enhancement Mode MOSFET |
| VDS | -30 V |
| VGS | ±25 V |
| Drain Current (TC=25°C) | -29 A |
| Drain Current (TA=25°C) | -8 A |
| RDS(on) (VGS=-10V) | 18 mOhm (max) |
| RDS(on) (VGS=-5V) | 36 mOhm (max) |
| Gate Threshold Voltage | -1.7 to -3.0 V |
| Total Gate Charge | 24 nC (max) |
| Power Dissipation (TC=25°C) | 25 W |
| الحزمة | DFN 3×3-8L with exposed pad |
| درجة حرارة التشغيل | -55°C to 150°C |
الميزات
- Advanced trench technology for low RDS(on)
- Ultra-low gate charge (18 nC typical)
- 25 V gate rating for robust operation
- 100% UIS (Unclamped Inductive Switching) tested
- Compact DFN 3×3 package for space-constrained designs
- RoHS compliant
- Suitable for load switch and PWM applications
التطبيقات
- Battery management and protection circuits
- Load switching in portable electronics
- Power management in notebooks and tablets
- Motor driver circuits (H-bridge high-side)
- DC-DC converter synchronous rectification