نظرة عامة على المنتج
The AO4407A from Alpha & Omega Semiconductor is a 30V P-channel enhancement mode MOSFET with 13mΩ max RDS(on) at VGS=-10V in an SOIC-8 package. With -12A continuous drain current and 30nC gate charge, it is optimized for load switch and PWM applications in battery-powered and computing systems.
المواصفات الرئيسية
| VDS | -30V |
| ID (TA=25°C) | -12 A |
| RDS(on) Max @ VGS=-10V | 13 mΩ |
| RDS(on) Max @ VGS=-6V | 17 mΩ |
| RDS(on) Typ @ VGS=-5V | 30 mΩ |
| VGS(th) Max | -3.0V |
| Qg Total @ VGS=-10V | 30 nC typical, 39 nC max |
| Qgd (Miller Charge) | 10 nC typical |
| Power Dissipation (TA=25°C) | 3.1 W |
| RθJA (Steady-State) | 54°C/W typical, 75°C/W max |
| Body Diode trr | 30 ns typical |
| UIS Tested | Yes (100%) |
| Rg Tested | Yes (100%) |
| درجة حرارة التشغيل | -55 to +150°C (TJ) |
| الحزمة | SOIC-8 (8-SOIC, 3.9mm body width) |
الميزات
- 30V P-channel trench MOSFET
- Ultra-low RDS(on): 13mΩ max at VGS=-10V
- -12A continuous drain current
- ±25V gate-source voltage rating
- 30nC typical gate charge
- 100% UIS and Rg tested
- Advanced trench technology for low RDS(on) × Qg figure of merit
- RoHS compliant and Pb-free
التطبيقات
- Load switch and power switching
- Battery management and protection
- DC-DC converter high-side P-MOSFET
- Notebook and desktop power management
- Motor drive H-bridge (P-side)