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IRFP264PBF

N-Channel 250V 38A Power MOSFET, 75mOhm, TO-247AC, avalanche rated

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جزء الشركة المصنعة ： جزء الشركة المصنعة

IRFP264PBF

الحزمة ： الحزمة

TO-247AC (20.8 x 15.8 x 5.4 mm)

الوصف

نظرة عامة على المنتج

The IRFP264PBF from Vishay Siliconix is an N-channel power MOSFET rated at 250 V drain-source voltage and 38 A continuous drain current in a TO-247AC package. It features 75 mOhm on-resistance at VGS=10V and is designed for high-power switching applications including audio amplifiers, motor drives, and power supplies.

المواصفات الرئيسية

النوع	N-Channel Power MOSFET
VDS	250 V
VGS	±20 V
Continuous Drain Current (TC=25°C)	38 A
Continuous Drain Current (TC=100°C)	24 A
RDS(on) (VGS=10V)	75 mOhm (max)
Gate Threshold Voltage	2.0-4.0 V
Total Gate Charge	210 nC (max)
Power Dissipation (TC=25°C)	280 W
Avalanche Energy	1000 mJ (single pulse)
الحزمة	TO-247AC
درجة حرارة التشغيل	-55°C to 150°C

الميزات

Third generation Power MOSFET technology
Dynamic dv/dt rating for rugged switching
Repetitive avalanche rated
Isolated central mounting hole in TO-247AC
Fast switching speed
Ease of paralleling for higher current
Simple drive requirements
100% avalanche tested
Lead-free (PbF) option available

التطبيقات

Audio power amplifiers (Class D and linear)
Motor drive and inverter circuits
Switching power supplies and converters
UPS and battery management systems
Welding and plasma cutting equipment

مقدمة المنتج:IRFP264PBF مقدمة المنتج

The IRFP264PBF from Vishay Siliconix is a third-generation N-channel power MOSFET offering 250 V drain-source voltage, 38 A continuous current, and 75 mOhm on-resistance in a TO-247AC package. The device utilizes advanced silicon technology to provide an optimal combination of low on-resistance, fast switching, and rugged avalanche capability. The TO-247AC package features an isolated central mounting hole and greater creepage distances between pins compared to TO-218, making it preferred for commercial and industrial applications requiring higher power levels. It is 100% avalanche tested and available in lead-free (PbF) packaging.

مبدأ العمل:IRFP264PBF مبدأ العمل

The IRFP264PBF is an enhancement-mode N-channel vertical power MOSFET. When a positive gate-source voltage exceeding the threshold (2.0-4.0V) is applied, an inversion layer forms under the gate oxide, creating a conductive channel between source and drain. Current flows from drain to source through this channel. The RDS(on) of 75 mOhm (max at VGS=10V) determines conduction losses. During switching transitions, gate charge (210 nC max) must be supplied/removed by the gate driver. The body diode provides a current path during inductive switching, with reverse recovery time of 110-170 ns. Avalanche capability allows the device to absorb energy from inductive kickback without damage, rated at 1000 mJ single pulse.

وصف الدبوس:IRFP264PBF تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	البوابة	المدخلات	MOSFET gate (control terminal)
2	الصرف	المخرجات	MOSFET drain (connected to tab)
3	المصدر	Reference	MOSFET source
علامة التبويب	الصرف	المخرجات	Drain connection (heatsink mount)

Application Scenarios:In which products and applications isIRFP264PBF مستعمل

Class D audio amplifier output stages
Motor drive H-bridge and half-bridge circuits
Switch-mode power supply primary-side switching
Uninterruptible power supply (UPS) inverter stages
DC motor control and battery disconnect switches

Alternative Models:What chips are recommended as replacements for IRFP264PBF

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
فيشاي	IRFP264NPBF	TO-247AC	Newer generation, lower RDS(on)
إنفينيون	IPW60R190C6	TO-247	600V CoolMOS, superjunction
STMicroelectronics	STW88N150	TO-247	150V, 88A, lower voltage
أونسمي	FCH47N60F	TO-247	600V SuperFET
فيشاي	IRFP250PBF	TO-247AC	200V, 30A, lower voltage variant