{"id":9175,"date":"2026-07-02T12:21:45","date_gmt":"2026-07-02T12:21:45","guid":{"rendered":"https:\/\/materialparts.com\/nvmfd5c466nlt1g\/"},"modified":"2026-07-02T12:21:45","modified_gmt":"2026-07-02T12:21:45","slug":"nvmfd5c466nlt1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/nvmfd5c466nlt1g\/","title":{"rendered":"NVMFD5C466NLT1G"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The NVMFD5C466NLT1G is an onsemi AEC-Q101 qualified dual N-channel power MOSFET in a compact DFN-8 (5x6mm) package. Featuring 40V VDSS, 7.4m\u03a9 max RDS(on) at 10V, and 52A continuous drain current per die, it is designed for automotive motor drive and load switching applications requiring high current density in a small footprint.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u914d\u7f6e<\/td>\nDual N-Channel (common drain)<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n40V<\/td>\n<\/tr>\n
On-Resistance (RDS(on)) Max<\/td>\n7.4m\u03a9 @ VGS=10V; 12m\u03a9 @ VGS=4.5V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n52A (per die, TC=25\u00b0C)<\/td>\n<\/tr>\n
Gate Charge (Qg) Typ<\/td>\n16nC @ VGS=10V; 7nC @ VGS=4.5V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n860pF (typ) @ VDS=25V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n40W (per die)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
\u8d44\u683c<\/td>\nAEC-Q101<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • AEC-Q101 qualified and PPAP capable<\/li>\n
  • Dual N-channel in compact DFN-8 (5x6mm) package<\/li>\n
  • Low RDS(on): 7.4m\u03a9 max @ 10V for minimal conduction loss<\/li>\n
  • Low gate charge for efficient switching<\/li>\n
  • 100% avalanche tested<\/li>\n
  • Wettable flank option available (NVMFD5C466NLWFT1G)<\/li>\n
  • PowerTrench\u00ae T6 technology<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Automotive motor drive half-bridge stages<\/li>\n
    • DC motor H-bridge drives<\/li>\n
    • Automotive engine controllers<\/li>\n
    • ABS\/ESC braking systems<\/li>\n
    • Low-side and high-side load switches<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NVMFD5C466NLT1G is an onsemi AEC-Q101 qualified dual N-channel power MOSFET in a compact DFN-8 (5x6mm) package. Featuring 40V VDSS, 7.4m\u03a9 max RDS(on) at 10V, and 52A continuous drain current per die, it is designed for automotive motor drive and load switching applications requiring high current density in a small footprint. Key Specifications […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-9175","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"AEC-Q101 dual N-ch 40V 52A 7.4m\u03a9 MOSFET, DFN-8 (5x6mm), PowerTrench T6","date_code":"","package_case":"DFN-8 (5 x 6 x 1.05 mm)","in_stock":1500,"datasheet":"https:\/\/www.onsemi.com\/products\/discrete\/power-mosfets\/nvmfd5c466nl","price":"$0.80 @ 1ku","product_introduction":"The NVMFD5C466NLT1G is an onsemi AEC-Q101 qualified dual N-channel power MOSFET in a DFN-8 (5x6mm) package, featuring 40V VDSS, 7.4m\u03a9 max RDS(on) at 10V, and 52A continuous drain current per die. Built on PowerTrench\u00ae T6 technology, it delivers low conduction and switching losses for automotive motor drive and load switching applications. The dual configuration enables compact half-bridge layouts in DC motor drives, ABS\/ESC systems, and engine controllers.","working_principle":"The NVMFD5C466NLT1G contains two independent N-channel enhancement-mode MOSFETs in a single DFN-8 package with common drain connection. Each MOSFET operates as a voltage-controlled switch: applying a gate-source voltage above the threshold (1.2-2.2V) creates an inversion layer in the P-body region, forming a conductive channel between drain and source. The PowerTrench\u00ae T6 technology uses trench gate construction with optimized cell density to achieve 7.4m\u03a9 RDS(on) in a compact 5x6mm footprint. The dual configuration allows both high-side and low-side MOSFETs of a half-bridge to be placed adjacent to each other, minimizing parasitic loop inductance. At VGS=4.5V, the 12m\u03a9 RDS(on) enables direct drive from 5V logic, while at VGS=10V the RDS(on) drops to 7.4m\u03a9 for minimum conduction loss.","pin_description":"
      Pin<\/th>Mnemonic<\/th>Description<\/th><\/tr>
      1<\/td>S1<\/td>Source of MOSFET 1<\/td><\/tr>
      2<\/td>G1<\/td>Gate of MOSFET 1<\/td><\/tr>
      3<\/td>S2<\/td>Source of MOSFET 2<\/td><\/tr>
      4<\/td>G2<\/td>Gate of MOSFET 2<\/td><\/tr>
      5-8<\/td>D1\/D2<\/td>Drain (common, connected to exposed pad)<\/td><\/tr>
      EP<\/td>Drain<\/td>Exposed pad (drain, thermal and electrical)<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive DC motor H-bridge drive with two dual MOSFETs for full-bridge configuration<\/li>\n
      • ABS\/ESC valve driver half-bridge stage with 40V rating and 52A peak current<\/li>\n
      • Engine controller solenoid driver with low-side switch using 7.4m\u03a9 RDS(on)<\/li>\n
      • Automotive DC-DC converter synchronous buck stage with dual MOSFETs<\/li>\n
      • High-current load switch with parallel dual MOSFETs for 3.7m\u03a9 effective RDS(on)<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        NVMFD5C466NLWFT1G<\/td>onsemi<\/td>Same die with wettable flanks for AOI<\/td><\/tr>
        IRF3205PBF<\/td>Infineon<\/td>Single N-ch, 55V, 8m\u03a9, TO-220<\/td><\/tr>
        AO3400A<\/td>AOS<\/td>Single N-ch, 30V, SOT-23<\/td><\/tr>
        SJM3359B1W2T1G<\/td>onsemi<\/td>Dual P-ch companion device<\/td><\/tr>
        NVMFS5C466NLT1G<\/td>onsemi<\/td>Same function, SO-8FL package<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9175","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=9175"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9175\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=9175"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=9175"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=9175"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=9175"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}