{"id":9108,"date":"2026-07-02T11:35:21","date_gmt":"2026-07-02T11:35:21","guid":{"rendered":"https:\/\/materialparts.com\/smun5313dw1t1g\/"},"modified":"2026-07-03T08:03:48","modified_gmt":"2026-07-03T08:03:48","slug":"smun5313dw1t1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/smun5313dw1t1g\/","title":{"rendered":"SMUN5313DW1T1G"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The onsemi SMUN5313DW1T1G is a dual complementary pre-biased digital transistor integrating one NPN and one PNP transistor with built-in bias resistors in a single SOT-363 (SC-88) package. Designed for AEC-Q101 automotive applications, it simplifies circuit design by eliminating external bias resistors, with R1 = R2 = 47 k\u03a9 for both transistors.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
\u914d\u7f6e<\/td>\nDual (1 NPN + 1 PNP)<\/td>\n<\/tr>\n
VCEO<\/sub> Max<\/td>\n50 V (both polarities)<\/td>\n<\/tr>\n
IC<\/sub> Max<\/td>\n100 mA<\/td>\n<\/tr>\n
R1 (Input Resistor)<\/td>\n47 k\u03a9 (both)<\/td>\n<\/tr>\n
R2 (Emitter Resistor)<\/td>\n47 k\u03a9 (both)<\/td>\n<\/tr>\n
hFE<\/sub> Min<\/td>\n80<\/td>\n<\/tr>\n
VCE(sat)<\/sub> Max<\/td>\n0.25 V<\/td>\n<\/tr>\n
Ptot<\/sub> Max<\/td>\n385 mW<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 \u00b0C to +150 \u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSOT-363 (SC-88)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Dual complementary NPN\/PNP pre-biased transistors in one package<\/li>\n
  • Built-in bias resistors (R1 = R2 = 47 k\u03a9) reduce component count<\/li>\n
  • AEC-Q101 qualified for automotive applications<\/li>\n
  • Low saturation voltage: 0.25 V max at IC = 10 mA<\/li>\n
  • Wide operating temperature: -55 \u00b0C to +150 \u00b0C<\/li>\n
  • MSL 1 (unlimited floor life)<\/li>\n
  • Pb-free, RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Automotive digital signal switching and inverter circuits<\/li>\n
    • LED indicator drivers<\/li>\n
    • Logic-level interface circuits<\/li>\n
    • General-purpose digital switching in space-constrained designs<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The onsemi SMUN5313DW1T1G is a dual complementary pre-biased digital transistor integrating one NPN and one PNP transistor with built-in bias resistors in a single SOT-363 (SC-88) package. Designed for AEC-Q101 automotive applications, it simplifies circuit design by eliminating external bias resistors, with R1 = R2 = 47 k\u03a9 for both transistors. Key Specifications […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[674],"chip_brand":[144],"class_list":["post-9108","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","tag-smun5313dw1t1g","chip_brand-on"],"acf":{"brief_explanation":"Dual NPN\/PNP pre-biased digital transistor, 50V, 100mA, R1=R2=47k\u03a9, SOT-363, AEC-Q101","date_code":"","package_case":"SOT-363 (SC-88) (2.0 x 1.25 x 0.9 mm)","in_stock":11947,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/mun531335dw1-d.pdf","price":"$0.079 @ 1ku","product_introduction":"The onsemi SMUN5313DW1T1G is a dual complementary pre-biased digital transistor that integrates one NPN and one PNP transistor with built-in 47 k\u03a9 bias resistors in a compact SOT-363 (SC-88) package. The integrated R1 (input) and R2 (base-emitter) resistors eliminate the need for external bias components, reducing PCB area and BOM cost. With a collector-emitter voltage rating of 50 V for both polarities and continuous collector current of 100 mA, the device is suitable for driving small loads and interfacing logic signals. The complementary NPN\/PNP pair enables push-pull output stages and signal inversion in a single package. AEC-Q101 qualification ensures automotive-grade reliability across the -55 \u00b0C to +150 \u00b0C temperature range. The device features a minimum DC current gain (hFE) of 80 and maximum collector-emitter saturation voltage of 0.25 V, providing efficient switching performance.","working_principle":"The SMUN5313DW1T1G integrates two independent pre-biased transistor circuits within a single 6-pin SOT-363 package. Each transistor has a built-in series base resistor (R1 = 47 k\u03a9) that limits base current when a logic-level input is applied, and a parallel base-emitter resistor (R2 = 47 k\u03a9) that provides a defined turn-off path for leakage current and stored charge. When the input voltage exceeds the turn-on threshold (approximately 0.9 V for NPN, 1.0 V for PNP at IC = 10 mA), current flows through R1 into the base, turning on the transistor. When the input goes low, R2 discharges the base-emitter capacitance, ensuring fast and reliable turn-off. The NPN and PNP transistors are electrically independent, allowing them to be used in complementary configurations such as push-pull drivers, signal inverters, or as two independent switches. The 47 k\u03a9 \/ 47 k\u03a9 resistor ratio (R1\/R2 = 1) provides balanced switching characteristics.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>B1<\/td>Input<\/td>NPN base input (via R1=47k\u03a9)<\/td><\/tr>
      2<\/td>E2<\/td>Output<\/td>PNP emitter<\/td><\/tr>
      3<\/td>C2<\/td>Output<\/td>PNP collector<\/td><\/tr>
      4<\/td>B2<\/td>Input<\/td>PNP base input (via R1=47k\u03a9)<\/td><\/tr>
      5<\/td>E1<\/td>Ground<\/td>NPN emitter<\/td><\/tr>
      6<\/td>C1<\/td>Output<\/td>NPN collector<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive logic signal inversion and level shifting<\/li>
      • LED indicator driver circuits in dashboard displays<\/li>
      • Push-pull output stage for relay and solenoid control<\/li>
      • Space-saving digital switching in body electronics<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>BCR08PNH6327XTSA1<\/td>SOT-363<\/td>Dual NPN\/PNP, R1=2.2k\u03a9\/R2=47k\u03a9<\/td><\/tr>
        Rohm<\/td>UMH3NTN<\/td>SOT-363<\/td>Dual NPN\/PNP pre-biased<\/td><\/tr>
        Nexperia<\/td>PMBT3904<\/td>SOT-23<\/td>Single NPN alternative (no bias resistors)<\/td><\/tr>
        Diodes Inc<\/td>DAN202K<\/td>SOT-363<\/td>Dual NPN digital transistor<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9108","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=9108"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9108\/revisions"}],"predecessor-version":[{"id":9129,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9108\/revisions\/9129"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=9108"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=9108"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=9108"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=9108"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}