{"id":9089,"date":"2026-07-02T10:52:57","date_gmt":"2026-07-02T10:52:57","guid":{"rendered":"https:\/\/materialparts.com\/stl76dn4lf7ag\/"},"modified":"2026-07-03T08:03:39","modified_gmt":"2026-07-03T08:03:39","slug":"stl76dn4lf7ag","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/stl76dn4lf7ag\/","title":{"rendered":"STL76DN4LF7AG"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The STMicroelectronics STL76DN4LF7AG is an automotive-grade dual N-channel Power MOSFET using STripFET F7 technology. It features 40 V drain-source voltage, 5 m\u03a9 typical on-resistance, and 40 A continuous drain current per channel in a compact PowerFLAT 5×6 double island package with wettable flanks.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u914d\u7f6e<\/td>\nDual N-Channel<\/td>\n<\/tr>\n
VDSS<\/sub><\/td>\n40 V<\/td>\n<\/tr>\n
ID<\/sub> (per channel)<\/td>\n40 A<\/td>\n<\/tr>\n
RDS(on)<\/sub> Typ @ VGS<\/sub>=10V<\/td>\n5 m\u03a9<\/td>\n<\/tr>\n
RDS(on)<\/sub> Max @ VGS<\/sub>=10V<\/td>\n6 m\u03a9<\/td>\n<\/tr>\n
Qg<\/sub> Total<\/td>\n17 nC<\/td>\n<\/tr>\n
VGS(th)<\/sub> Max<\/td>\n2.5 V<\/td>\n<\/tr>\n
Ptot<\/sub><\/td>\n71 W<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nPowerFLAT 5×6 double island WF<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • AEC-Q101 qualified for automotive applications<\/li>\n
  • Among the lowest RDS(on) on the market<\/li>\n
  • Excellent figure of merit (FoM)<\/li>\n
  • Low Crss\/Ciss ratio for EMI immunity<\/li>\n
  • High avalanche ruggedness<\/li>\n
  • Wettable flank package for automated optical inspection<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Automotive DC-DC converter switching<\/li>\n
    • Motor drive and inverter stages<\/li>\n
    • Battery management system switches<\/li>\n
    • Power distribution and load switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The STMicroelectronics STL76DN4LF7AG is an automotive-grade dual N-channel Power MOSFET using STripFET F7 technology. It features 40 V drain-source voltage, 5 m\u03a9 typical on-resistance, and 40 A continuous drain current per channel in a compact PowerFLAT 5×6 double island package with wettable flanks. Key Specifications Configuration Dual N-Channel VDSS 40 V ID (per […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[668],"chip_brand":[142],"class_list":["post-9089","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-stl76dn4lf7ag","chip_brand-st"],"acf":{"brief_explanation":"Dual N-ch MOSFET, 40V, 40A, 5m\u03a9 typ, STripFET F7, AEC-Q101, PowerFLAT 5x6","date_code":"","package_case":"PowerFLAT 5x6 double island WF (5.0 x 6.0 x 0.9 mm)","in_stock":14135,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/stl76dn4lf7ag.pdf","price":"$0.79 @ 500u","product_introduction":"The STMicroelectronics STL76DN4LF7AG is an automotive-grade dual N-channel Power MOSFET that utilizes ST's advanced STripFET F7 technology with an enhanced trench gate structure. This results in an exceptionally low on-state resistance of 5 m\u03a9 typical at VGS=10V, among the lowest available in this package class. The double island construction provides electrical isolation between the two MOSFET channels, enabling half-bridge or independent switch configurations. With 40 A continuous drain current per channel and 71 W total power dissipation, the device is suitable for demanding automotive power applications. The low Crss\/Ciss ratio of 0.029 provides excellent EMI immunity by minimizing the Miller effect during switching transitions. The PowerFLAT 5x6 package features wettable flanks for reliable automated optical inspection of solder joints in automotive manufacturing.","working_principle":"The STL76DN4LF7AG contains two independent N-channel enhancement-mode vertical power MOSFETs in a double island PowerFLAT package. Each MOSFET consists of thousands of parallel trench-gate cells on a single die. When VGS exceeds the threshold voltage (1.5-2.5 V), an inversion layer forms in the P-body beneath the gate oxide, creating a conductive channel between source and drain. The STripFET F7 trench gate structure minimizes the cell pitch and optimizes the gate charge distribution, achieving 5 m\u03a9 RDS(on) with only 17 nC total gate charge for excellent switching efficiency. The double island construction means each MOSFET die is mounted on its own electrically isolated copper pad, preventing cross-conduction and allowing half-bridge configurations without additional isolation. The low Crss (28 pF) relative to Ciss (956 pF) minimizes the Miller plateau during turn-off, reducing switching losses and improving EMI performance.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>S1<\/td>Power<\/td>Source MOSFET 1<\/td><\/tr>
      2<\/td>G1<\/td>Input<\/td>Gate MOSFET 1<\/td><\/tr>
      3<\/td>S2<\/td>Power<\/td>Source MOSFET 2<\/td><\/tr>
      4<\/td>G2<\/td>Input<\/td>Gate MOSFET 2<\/td><\/tr>
      5<\/td>D2<\/td>Power<\/td>Drain MOSFET 2<\/td><\/tr>
      6<\/td>D1<\/td>Power<\/td>Drain MOSFET 1<\/td><\/tr>
      7<\/td>D1<\/td>Power<\/td>Drain MOSFET 1<\/td><\/tr>
      8<\/td>D2<\/td>Power<\/td>Drain MOSFET 2<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive DC-DC converter synchronous rectification<\/li>
      • Motor drive half-bridge power stage<\/li>
      • Battery management system high-current switching<\/li>
      • Automotive power distribution and load disconnect<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        ST<\/td>STL76DN4LF7AG<\/td>PowerFLAT 5x6<\/td>This part<\/td><\/tr>
        Infineon<\/td>BSZ070N08LS5ATMA1<\/td>SuperSO-8<\/td>7m\u03a9 80V alternative<\/td><\/tr>
        onsemi<\/td>NVTFS5C412NL<\/td>DFN-8<\/td>Dual N-ch, 40V<\/td><\/tr>
        Vishay<\/td>SiZ342DT<\/td>PowerPAK<\/td>Dual N-ch, 30V<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9089","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=9089"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9089\/revisions"}],"predecessor-version":[{"id":9102,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/9089\/revisions\/9102"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=9089"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=9089"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=9089"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=9089"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}