The DMG2305UX-7 is a Diodes Incorporated P-channel enhancement mode MOSFET with -20V VDS, -4.2A drain current, 48mOhm RDS(on) max at -4.5V, and 1.2W power dissipation. Packaged in SOT-23-3, -55C to +150C.<\/p>\n
| VDS<\/td>\n | -20 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| RDS(on) max<\/td>\n | 48 mOhm @ Vgs=-4.5V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u8eab\u4efd\u8bc1<\/td>\n | -4.2 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Vgs(th)<\/td>\n | -0.7V to -1.5V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Qg<\/td>\n | 6.5 nC typ<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Pd<\/td>\n | 1.2 W<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | SOT-23-3<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The DMG2305UX-7 is a Diodes Incorporated P-channel enhancement mode MOSFET with -20V VDS, -4.2A drain current, 48mOhm RDS(on) max at -4.5V, and 1.2W power dissipation. Packaged in SOT-23-3, -55C to +150C. Key Specifications VDS -20 V RDS(on) max 48 mOhm @ Vgs=-4.5V ID -4.2 A Vgs(th) -0.7V to -1.5V Qg 6.5 nC typ […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[635],"chip_brand":[199],"class_list":["post-9006","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-dmg2305ux-7","chip_brand-diodes"],"acf":{"brief_explanation":"-30V P-ch MOSFET, 55mOhm, -4.1A, SOT-23-3","date_code":"","package_case":"3-Pin SOT-23 (2.9 x 1.6 x 1.0 mm)","in_stock":9569,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/DMG2305UX.pdf","price":"$0.14 @ 1ku","product_introduction":"The DMG2305UX-7 is a Diodes Incorporated P-channel enhancement-mode power MOSFET in a compact SOT-23-3 package. The device features a -30V drain-source voltage rating and -4.1A continuous drain current with 55 mOhm typical on-resistance at VGS=-10V. The low threshold voltage (VGS(th) of -0.9V typical) enables direct logic-level gate drive from 2.5V and 3.3V microcontrollers. The tiny SOT-23-3 footprint makes it ideal for load switches, battery protection, and power routing in space-constrained portable devices. The low gate charge (7.8 nC typical) supports switching frequencies up to several hundred kHz with minimal gate drive loss. The device provides a cost-effective solution for high-side switching applications where an N-channel MOSFET would require a bootstrap gate drive circuit.","working_principle":"The DMG2305UX-7 operates as a voltage-controlled P-channel MOSFET switch. When the gate-source voltage (VGS) is sufficiently negative (below the threshold of approximately -0.9V), an inversion layer forms in the N-body region beneath the gate oxide, creating a conduction channel between source and drain. The drain current flows from source to drain (conventional current direction) when the MOSFET is enhanced. The on-resistance (RDS(on) of 55 mOhm at VGS=-10V) determines the conduction loss during the on-state. For high-side switching, the source is connected to the supply rail and the drain to the load; pulling the gate low relative to the source turns the MOSFET on. The body diode (inherent PN junction from source to drain) provides a conduction path when VSD is positive, which can serve as a free-wheeling diode in battery charging circuits.","pin_description":"
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