The ADG1208YRUZ-REEL7 is an Analog Devices low-capacitance 8-channel iCMOS multiplexer with 120 ohm on-resistance, +\/-15V supply, <1pC charge injection, and 33V supply range. Y-grade for -40C to +125C. Packaged in 16-lead TSSOP.<\/p>\n
| \u914d\u7f6e<\/td>\n | 8:1 multiplexer<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||
| Ron<\/td>\n | 120 ohm typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||
| Charge Injection<\/td>\n | <1 pC<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||
| Coff<\/td>\n | 1 pF<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||
| Supply<\/td>\n | +\/-5V to +\/-16.5V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||||||||||||||||
| Bandwidth<\/td>\n | >200 MHz<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The ADG1208YRUZ-REEL7 is an Analog Devices low-capacitance 8-channel iCMOS multiplexer with 120 ohm on-resistance, +\/-15V supply, <1pC charge injection, and 33V supply range. Y-grade for -40C to +125C. Packaged in 16-lead TSSOP. Key Specifications Configuration 8:1 multiplexer Ron 120 ohm typical Charge Injection <1 pC Coff 1 pF Supply +\/-5V to +\/-16.5V Bandwidth […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[],"chip_brand":[165],"class_list":["post-8902","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-interface-ics","chip_brand-adi"],"acf":{"brief_explanation":"8:1 mux, 120ohm, <1pC, 1pF Coff, +\/-15V, TSSOP-16","date_code":"","package_case":"16-Lead TSSOP (5.0 x 4.4 x 1.05 mm)","in_stock":3100,"datasheet":"https:\/\/www.analog.com\/media\/en\/technical-documentation\/data-sheets\/adg1208_1209.pdf","price":"$4.90 @ 1ku","product_introduction":"The ADG1208YRUZ-REEL7 is an Analog Devices low-capacitance 8-channel iCMOS multiplexer in a 16-lead TSSOP package. The device switches one of eight inputs (S1-S8) to a common output (D) as determined by 3-bit binary address lines A0-A2 and an enable (EN) input. The iCMOS process enables +\/-15V dual supply or 12V single supply operation for wide analog signal range. The standout specification is the less than 1pC charge injection over the full signal range, making the ADG1208 ideal for precision sample-and-hold circuits and integrators where charge injection causes offset errors. The 1pF off-capacitance minimizes parasitic loading on unselected channels at high frequencies. The 120 ohm typical on-resistance with low on-resistance flatness ensures minimal signal distortion. The Y-grade extends the operating temperature to -40C to +125C for industrial applications. Break-before-make switching prevents channel-to-channel shorting during transitions. Ultra-low power dissipation (less than 0.03uW typical) makes it suitable for battery-powered instruments.","working_principle":"The ADG1208 uses eight CMOS transmission gates, each connecting one source input (S1-S8) to the common drain output (D). The 3-bit address decoder selects which transmission gate is active. Each transmission gate consists of parallel NMOS and PMOS transistors that provide rail-to-rail signal capability with 120 ohm on-resistance. The iCMOS process uses thick-gate-oxide high-voltage transistors for +\/-15V operation while maintaining low capacitance and charge injection. When a channel is selected, both NMOS and PMOS switches conduct; when deselected, both are off, presenting only 1pF capacitance to the signal path. Charge injection occurs when the gate voltage transitions, coupling charge through the overlap capacitance to the channel; the iCMOS process minimizes this effect through careful transistor sizing and symmetrical NMOS\/PMOS layout. Break-before-make logic ensures the previously selected channel is fully disconnected before the new channel connects.","pin_description":"
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