The BAT54JFILM is a STMicroelectronics small signal Schottky barrier diode in a SOD-323 (SC-76) surface-mount package. It features 40 V reverse voltage, 300 mA average forward current, and low forward voltage drop. The FILM suffix indicates halogen-free and tape-and-reel packaging.<\/p>\n
| VR (max)<\/td>\n | 40 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| IF (avg)<\/td>\n | 300 mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| VF (typ)<\/td>\n | 320 mV at 1 mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Ir (max)<\/td>\n | 1 uA at 30 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||
| Cd<\/td>\n | 10 pF at 1V, 1MHz<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The BAT54JFILM is a STMicroelectronics small signal Schottky barrier diode in a SOD-323 (SC-76) surface-mount package. It features 40 V reverse voltage, 300 mA average forward current, and low forward voltage drop. The FILM suffix indicates halogen-free and tape-and-reel packaging. Key Specifications VR (max) 40 V IF (avg) 300 mA VF (typ) 320 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[142],"class_list":["post-8741","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-st"],"acf":{"brief_explanation":"40V\/300mA Schottky diode, 900mV Vf, 5ns trr, SOD-323","date_code":"","package_case":"SOD-323 (1.80 x 1.35 mm)","in_stock":18000,"datasheet":"https:\/\/www.st.com\/en\/discrete-products\/bat54.html","price":"$0.07 @ 1ku","product_introduction":"The STMicroelectronics BAT54JFILM is a small-signal Schottky barrier diode in a SOD-323 surface-mount package, rated at 40V repetitive peak reverse voltage and 300mA continuous forward current. The Schottky barrier construction provides a low forward voltage drop of 900 mV at 100 mA\u2014significantly lower than silicon PN junction diodes (typically 1.2-1.4V at the same current)\u2014reducing conduction losses in power switching and rectification applications. The 5 ns reverse recovery time eliminates switching losses in high-frequency applications up to several MHz, making the BAT54J suitable for switching power supply freewheeling, RF detection, and reverse polarity protection in portable devices. The low junction capacitance of 7 pF (typical at 1V, 1 MHz) minimizes signal distortion in RF and high-speed digital circuits. The SOD-323 package is 40% smaller than SOT-23, enabling higher component density in space-constrained designs such as smartphones, wearables, and IoT sensors. The device is rated for junction temperatures from -40C to +150C, supporting automotive and industrial environments. The tape-and-reel packaging (FILM suffix) with 3,000 units per reel supports automated pick-and-place assembly.","working_principle":"The BAT54J uses a metal-semiconductor (Schottky) junction formed by depositing a metal contact (typically molybdenum or titanium-tungsten) directly onto an N-type silicon region. Unlike a PN junction diode where both holes and electrons participate in current flow, the Schottky diode operates primarily through majority carriers (electrons). This fundamental difference eliminates the minority carrier storage charge that causes reverse recovery delay in PN junction diodes. When forward biased, electrons cross from the N-type silicon into the metal with minimal energy barrier, resulting in the lower forward voltage drop. When reverse biased, the metal-semiconductor junction blocks current flow (except for a small leakage current of 1 uA at 30V). The absence of stored minority carriers means that when the bias switches from forward to reverse, the diode turns off almost instantaneously\u20145 ns reverse recovery time versus 25-100 ns for fast silicon PN diodes. The 7 pF junction capacitance results from the metal-semiconductor barrier and the small junction area required for a 300 mA device.","pin_description":"
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