{"id":8716,"date":"2026-06-30T04:02:06","date_gmt":"2026-06-30T04:02:06","guid":{"rendered":"https:\/\/materialparts.com\/si4909dy-t1-ge3\/"},"modified":"2026-06-30T04:02:06","modified_gmt":"2026-06-30T04:02:06","slug":"si4909dy-t1-ge3","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/si4909dy-t1-ge3\/","title":{"rendered":"SI4909DY-T1-GE3"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The SI4909DY-T1-GE3 is a Vishay Siliconix dual P-channel 40 V (D-S) TrenchFET MOSFET in an SO-8 package. It features an on-resistance of 27 m\u03a9 at VGS = -10 V, continuous drain current of 8 A, and logic-level gate threshold. The device is optimized for load switching and power management applications, operating from -55\u00b0C to +150\u00b0C junction temperature.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n-40 V<\/td>\n<\/tr>\n
RDS(on)<\/td>\n27 m\u03a9 @ VGS = -10 V, ID = -8 A<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1<\/td>\n-8 A (continuous)<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-1.2 V to -2.5 V<\/td>\n<\/tr>\n
Qg<\/td>\n63 nC @ VGS = -10 V<\/td>\n<\/tr>\n
\u897f\u65af<\/td>\n2000 pF @ VDS = -20 V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n3.2 W<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSO-8<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Dual P-channel configuration (isolated)<\/li>\n
  • TrenchFET technology<\/li>\n
  • Logic-level gate drive<\/li>\n
  • Low RDS(on): 27 m\u03a9 max<\/td>\n<\/li>\n
  • 40 V drain-source voltage rating<\/li>\n
  • 8 A continuous drain current<\/li>\n
  • Operating junction temperature: -55\u00b0C to +150\u00b0C<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Load switching and power routing<\/li>\n
    • Battery disconnect switches<\/li>\n
    • DC-DC converter synchronous rectification<\/li>\n
    • Motor drive and control<\/li>\n
    • Power management in portable devices<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SI4909DY-T1-GE3 is a Vishay Siliconix dual P-channel 40 V (D-S) TrenchFET MOSFET in an SO-8 package. It features an on-resistance of 27 m\u03a9 at VGS = -10 V, continuous drain current of 8 A, and logic-level gate threshold. The device is optimized for load switching and power management applications, operating from -55\u00b0C […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[136],"class_list":["post-8716","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-vishay"],"acf":{"brief_explanation":"Dual P-channel 40V TrenchFET MOSFET, 27m\u03a9, 8A, SO-8, logic-level gate","date_code":"","package_case":"SO-8 (4.9 x 3.9 x 1.27 mm)","in_stock":8340,"datasheet":"https:\/\/www.vishay.com\/docs\/67077\/si4909dy.pdf","price":"","product_introduction":"The SI4909DY-T1-GE3 is a Vishay Siliconix dual P-channel TrenchFET power MOSFET rated at 40 V drain-source voltage and 8 A continuous drain current. Using TrenchFET technology, it achieves a low on-resistance of 27 m\u03a9 at VGS = -10 V, minimizing conduction losses in load switching and power management applications. The dual isolated configuration allows both MOSFETs to be independently controlled, enabling H-bridge half-bridge, or dual load switch topologies. Logic-level gate threshold enables direct drive from 3.3 V or 5 V microcontroller GPIOs. The SO-8 surface mount package provides a compact footprint for space-constrained designs.","working_principle":"The SI4909DY operates as a dual P-channel enhancement-mode MOSFET. Each MOSFET channel conducts when the gate-source voltage exceeds the threshold (VGS(th) = -1.2 to -2.5 V). The TrenchFET vertical trench gate architecture reduces the JFET effect and cell pitch, achieving low RDS(on) of 27 m\u03a9. In the off state, the drain-source junction blocks voltage up to 40 V. The body diode inherent in the MOSFET structure provides a path for inductive kickback current in switching applications. The dual isolated configuration means both MOSFETs share no internal connections (except substrate), allowing independent control for complementary switching or separate load driving.","pin_description":"
      Pin<\/th>Mnemonic<\/th>Description<\/th><\/tr>
      1<\/td>S1<\/td>Source of MOSFET 1<\/td><\/tr>
      2<\/td>G1<\/td>Gate of MOSFET 1<\/td><\/tr>
      3<\/td>S2<\/td>Source of MOSFET 2<\/td><\/tr>
      4<\/td>G2<\/td>Gate of MOSFET 2<\/td><\/tr>
      5,6,7,8<\/td>D2\/D1<\/td>Drain of MOSFET 2 and MOSFET 1 (common drain tab)<\/td><\/tr><\/table>","application_scenarios":"
      • Dual load switching in battery-powered devices with independent control<\/li>\n
      • DC-DC converter synchronous rectification with complementary P-channel pair<\/li>\n
      • H-bridge motor drive half-bridge using dual P-channel configuration<\/li>\n
      • Battery disconnect and reverse polarity protection switches<\/li>\n
      • Power routing in portable devices with 27 m\u03a9 conduction loss<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        SI4909DY-T1-E3<\/td>Vishay<\/td>Standard tape version<\/td><\/tr>
        SI4936ADY-T1-E3<\/td>Vishay<\/td>Dual P-channel, similar specs<\/td><\/tr>
        FDS8936<\/td>onsemi<\/td>Dual P-channel 30V MOSFET<\/td><\/tr>
        IRF7304<\/td>Infineon<\/td>Dual P-channel 30V SO-8<\/td><\/tr>
        NTHD4102P<\/td>onsemi<\/td>Dual P-channel 20V complementary pair<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8716","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=8716"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8716\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=8716"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=8716"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=8716"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=8716"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}