{"id":8483,"date":"2026-06-29T02:54:22","date_gmt":"2026-06-29T02:54:22","guid":{"rendered":"https:\/\/materialparts.com\/tga2567-sm\/"},"modified":"2026-06-29T06:28:02","modified_gmt":"2026-06-29T06:28:02","slug":"tga2567-sm","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/tga2567-sm\/","title":{"rendered":"TGA2567-SM"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The TGA2567-SM from Qorvo is a wideband GaN-on-SiC power amplifier operating from DC to 6 GHz in a surface-mount QFN package. Designed for high-power RF applications, it delivers up to 25W saturated output power with high gain and efficiency, making it suitable for electronic warfare, radar, and wideband communication systems.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
Technology<\/td>\nGaN-on-SiC HEMT<\/td>\n<\/tr>\n
Frequency Range<\/td>\nDC to 6 GHz (wideband)<\/td>\n<\/tr>\n
Saturated Output Power<\/td>\n25W typ<\/td>\n<\/tr>\n
Small Signal Gain<\/td>\n20 dB typ<\/td>\n<\/tr>\n
Power Added Efficiency<\/td>\n30% typ at Psat<\/td>\n<\/tr>\n
Drain Voltage<\/td>\n28V (typical)<\/td>\n<\/tr>\n
Drain Current<\/td>\n1.5A typ at Psat<\/td>\n<\/tr>\n
Input\/Output Impedance<\/td>\n50 Ohms (internally matched)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-40\u00b0C to +85\u00b0C (case)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSurface-mount QFN<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Wideband DC to 6 GHz operation in single device<\/li>\n
  • High saturated output power of 25W<\/li>\n
  • High power added efficiency up to 30%<\/li>\n
  • 50-ohm internally matched input\/output<\/li>\n
  • GaN-on-SiC for high voltage and high temperature operation<\/li>\n
  • Surface-mount QFN package for automated assembly<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Electronic warfare (EW) jammers<\/li>\n
    • Wideband radar transmitters<\/li>\n
    • Software-defined radio power amplification<\/li>\n
    • Test and measurement instrumentation<\/li>\n
    • Military communication systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The TGA2567-SM from Qorvo is a wideband GaN-on-SiC power amplifier operating from DC to 6 GHz in a surface-mount QFN package. Designed for high-power RF applications, it delivers up to 25W saturated output power with high gain and efficiency, making it suitable for electronic warfare, radar, and wideband communication systems. Key Specifications Technology […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[],"chip_brand":[159],"class_list":["post-8483","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-interface-ics","chip_brand-qorvo"],"acf":{"brief_explanation":"GaN-on-SiC wideband PA, DC-6GHz, 25W Psat, 20dB gain, 28V, SMT QFN","date_code":"","package_case":"Surface-Mount QFN","in_stock":10385,"datasheet":"https:\/\/www.qorvo.com\/products\/p\/TGA2567-SM","price":"$320.00 @ 1+","product_introduction":"The Qorvo TGA2567-SM is a wideband GaN-on-SiC power amplifier MMIC covering DC to 6 GHz in a surface-mount QFN package. Leveraging Qorvo's GaN-on-SiC HEMT technology, it delivers up to 25W saturated output power with 20 dB small signal gain and 30% power added efficiency at 28V drain bias. The 50-ohm internally matched input and output simplify system integration by eliminating external matching networks. The wide bandwidth from DC to 6 GHz makes it ideal for multi-octave EW, radar, and communication applications where a single amplifier covers multiple frequency bands. The surface-mount QFN package enables automated PCB assembly compared to traditional flange-mount GaN devices.","working_principle":"The TGA2567-SM is a GaN-on-SiC HEMT power amplifier MMIC where the wide bandgap GaN material provides high breakdown voltage (typically >100V) and high electron saturation velocity, enabling simultaneous high power density and wide bandwidth. The MMIC uses a multi-stage topology with input matching, interstage matching, and output matching networks realized as distributed transmission line elements on the SiC substrate. The output stage uses periphery-sized GaN HEMT cells combined through corporate feed networks to achieve the 25W output power. The 28V drain bias is significantly higher than GaAs or LDMOS alternatives, reducing the output matching transformation ratio and contributing to the wide bandwidth. The GaN-on-SiC substrate provides superior thermal conductivity (3-4 W\/cm-K) compared to GaAs (0.5 W\/cm-K), enabling higher power density and reliable operation at elevated channel temperatures.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      RF IN<\/td>RF Input<\/td>50-ohm matched RF input port<\/td><\/tr>
      RF OUT<\/td>RF Output<\/td>50-ohm matched RF output port (DC blocked)<\/td><\/tr>
      VDD<\/td>Drain Supply<\/td>28V drain bias supply<\/td><\/tr>
      VGG<\/td>Gate Bias<\/td>Gate bias voltage (typically -2.5V to -3.5V)<\/td><\/tr>
      GND<\/td>Ground<\/td>RF and thermal ground (multiple pads)<\/td><\/tr><\/table>","application_scenarios":"
      • Electronic Warfare<\/b>: Wideband DC-6GHz coverage for multi-band jamming and electronic attack in a single amplifier module<\/li>
      • Wideband Radar<\/b>: Instantaneous bandwidth covering S-band through C-band radar frequencies with 25W output power<\/li>
      • SDR Power Amp<\/b>: Software-defined radio transmitter covering VHF through C-band with GaN efficiency extending battery operation<\/li>
      • Test Equipment<\/b>: Broadband signal generation for ATE and EMC test systems with high output power across multiple octaves<\/li>
      • Military Comms<\/b>: Multi-band tactical communication covering UHF through C-band with SMT assembly for SWaP reduction<\/li><\/ul>","alternative_models":"
        Model<\/th>Brand<\/th>Freq Range<\/th>Psat (W)<\/th>Package<\/th><\/tr>
        TGA2570-SM<\/td>Qorvo<\/td>DC-6 GHz<\/td>15<\/td>SMT QFN<\/td><\/tr>
        T1G4001528-FL<\/td>Qorvo<\/td>DC-8 GHz<\/td>100<\/td>Flange<\/td><\/tr>
        CGH60120F<\/td>Wolfspeed<\/td>DC-6 GHz<\/td>120<\/td>Flange<\/td><\/tr>
        HMC1114<\/td>ADI<\/td>DC-6 GHz<\/td>50<\/td>Flange<\/td><\/tr>
        TGA2568-SM<\/td>Qorvo<\/td>DC-6 GHz<\/td>50<\/td>SMT QFN<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8483","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=8483"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8483\/revisions"}],"predecessor-version":[{"id":8484,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8483\/revisions\/8484"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=8483"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=8483"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=8483"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=8483"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}