{"id":8450,"date":"2026-06-29T01:17:27","date_gmt":"2026-06-29T01:17:27","guid":{"rendered":"https:\/\/materialparts.com\/cy7c1041gn30-10zsxit\/"},"modified":"2026-06-29T01:17:27","modified_gmt":"2026-06-29T01:17:27","slug":"cy7c1041gn30-10zsxit","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/cy7c1041gn30-10zsxit\/","title":{"rendered":"CY7C1041GN30-10ZSXIT"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The CY7C1041GN30-10ZSXIT from Infineon Technologies (formerly Cypress Semiconductor) is a 4-Mbit (256K \u00d7 16-bit) asynchronous static RAM in a 44-pin TSOP II package, offering 10 ns access time. It operates from a 2.2 V to 3.6 V supply with 38 mA typical active current and 6 mA typical standby current, featuring byte-enable control and 1.0 V data retention.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>Organization<\/td>\n<td>256K \u00d7 16 bits (4 Mbit)<\/td>\n<\/tr>\n<tr>\n<td>Access Time<\/td>\n<td>10 ns<\/td>\n<\/tr>\n<tr>\n<td>\u7535\u6e90\u7535\u538b<\/td>\n<td>2.2 V to 3.6 V<\/td>\n<\/tr>\n<tr>\n<td>Active Current (ICC)<\/td>\n<td>38 mA typical<\/td>\n<\/tr>\n<tr>\n<td>Standby Current (ISB2)<\/td>\n<td>6 mA typical<\/td>\n<\/tr>\n<tr>\n<td>Data Retention Voltage<\/td>\n<td>1.0 V<\/td>\n<\/tr>\n<tr>\n<td>Byte Control<\/td>\n<td>BHE (upper), BLE (lower)<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-40\u00b0C to +85\u00b0C (Industrial)<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>44-pin TSOP II (18.51 \u00d7 10.26 \u00d7 1.05 mm)<\/td>\n<\/tr>\n<tr>\n<td>I\/O Interface<\/td>\n<td>TTL-compatible<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>High-speed 10 ns access time<\/li>\n<li>Byte-high and byte-low enable for flexible access<\/li>\n<li>Low active and standby power consumption<\/li>\n<li>1.0 V data retention for battery backup<\/li>\n<li>TTL-compatible inputs and outputs<\/li>\n<li>Full static operation \u2014 no clock or refresh required<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Networking and telecommunications<\/li>\n<li>Embedded processor cache and buffer<\/li>\n<li>Digital signal processing<\/li>\n<li>Industrial control systems<\/li>\n<li>Data acquisition and buffering<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The CY7C1041GN30-10ZSXIT from Infineon Technologies (formerly Cypress Semiconductor) is a 4-Mbit (256K \u00d7 16-bit) asynchronous static RAM in a 44-pin TSOP II package, offering 10 ns access time. It operates from a 2.2 V to 3.6 V supply with 38 mA typical active current and 6 mA typical standby current, featuring byte-enable control [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[],"chip_brand":[173],"class_list":["post-8450","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-interface-ics","chip_brand-infineon"],"acf":{"brief_explanation":"4Mbit (256Kx16) async SRAM, 10ns, 2.2-3.6V, 44-pin TSOP II","date_code":"","package_case":"44-pin TSOP II (18.51 \u00d7 10.26 \u00d7 1.05 mm)","in_stock":1492,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5","price":"$3.70 @ 1ku","product_introduction":"The Infineon CY7C1041GN30-10ZSXIT is a high-performance CMOS static RAM organized as 256K words by 16 bits, providing 4 Mbit of fast asynchronous memory with 10 ns access time. It operates from a 2.2 V to 3.6 V supply and features independent byte enable inputs (BHE and BLE) for flexible upper and lower byte access. The device supports 1.0 V data retention for battery-backed operation. With TTL-compatible I\/O, low 38 mA active current, and a compact 44-pin TSOP II package, it is ideal for high-speed buffering in networking, DSP, and embedded processor applications.","working_principle":"The CY7C1041GN operates as an asynchronous static RAM requiring no clock or refresh. Data writes are performed by asserting Chip Enable (CE) and Write Enable (WE) low while presenting data on I\/O0-I\/O15 and address on A0-A17. Byte High Enable (BHE) and Byte Low Enable (BLE) control write access to the upper (I\/O8-I\/O15) and lower (I\/O0-I\/O7) bytes independently. Data reads are performed by asserting CE and Output Enable (OE) low, placing the addressed data on the I\/O lines. When CE is high or control signals are de-asserted, all I\/Os enter a high-impedance state. The device maintains data as long as VCC is above the data retention voltage of 1.0 V.","pin_description":"<table border=\"1\"><tr><th>Pin<\/th><th>Name<\/th><th>Description<\/th><\/tr><tr><td>1-18<\/td><td>A0-A17<\/td><td>Address Inputs<\/td><\/tr><tr><td>19<\/td><td>CE<\/td><td>Chip Enable (Active Low)<\/td><\/tr><tr><td>20<\/td><td>OE<\/td><td>Output Enable (Active Low)<\/td><\/tr><tr><td>21<\/td><td>WE<\/td><td>Write Enable (Active Low)<\/td><\/tr><tr><td>22<\/td><td>BLE<\/td><td>Byte Low Enable (Active Low)<\/td><\/tr><tr><td>23<\/td><td>BHE<\/td><td>Byte High Enable (Active Low)<\/td><\/tr><tr><td>24-41<\/td><td>I\/O0-I\/O15<\/td><td>Data Input\/Output<\/td><\/tr><tr><td>42<\/td><td>VCC<\/td><td>Power Supply (2.2-3.6 V)<\/td><\/tr><tr><td>43-44<\/td><td>VSS<\/td><td>Ground<\/td><\/tr><\/table>","application_scenarios":"<ul><li><b>Networking Buffer<\/b>: 10 ns SRAM for packet buffering and FIFO in routers and switches at wire-speed throughput<\/li><li><b>Processor Cache<\/b>: Fast external cache memory for embedded processors requiring deterministic 10 ns access<\/li><li><b>DSP Frame Buffer<\/b>: 16-bit wide data storage for digital signal processing algorithms and image processing<\/li><li><b>Industrial Control<\/b>: Real-time data acquisition buffering in PLCs and CNC controllers with byte-wide access<\/li><li><b>Telecom Systems<\/b>: Line card buffer memory in SONET\/SDH and DSLAM equipment with 1.0 V battery backup<\/li><\/ul>","alternative_models":"<table border=\"1\"><tr><th>Model<\/th><th>Brand<\/th><th>Size<\/th><th>Speed (ns)<\/th><th>VCC (V)<\/th><\/tr><tr><td>CY7C1041GN30-15ZSXIT<\/td><td>Infineon<\/td><td>4Mbit<\/td><td>15<\/td><td>2.2-3.6<\/td><\/tr><tr><td>CY7C1041CV33-10ZSXC<\/td><td>Infineon<\/td><td>4Mbit<\/td><td>10<\/td><td>4.5-5.5<\/td><\/tr><tr><td>AS7C4098B-10BIN<\/td><td>Alliance<\/td><td>4Mbit<\/td><td>10<\/td><td>3.0-3.6<\/td><\/tr><tr><td>IS61WV25616BLL-10TLI<\/td><td>ISSI<\/td><td>4Mbit<\/td><td>10<\/td><td>2.4-3.6<\/td><\/tr><tr><td>HM62V8512BLTTI-10<\/td><td>Renesas<\/td><td>4Mbit<\/td><td>10<\/td><td>3.0-3.6<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8450","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=8450"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8450\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=8450"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=8450"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=8450"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=8450"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}