{"id":8064,"date":"2026-06-28T08:48:37","date_gmt":"2026-06-28T08:48:37","guid":{"rendered":"https:\/\/materialparts.com\/nts4173pt1g\/"},"modified":"2026-06-28T11:34:57","modified_gmt":"2026-06-28T11:34:57","slug":"nts4173pt1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/nts4173pt1g\/","title":{"rendered":"NTS4173PT1G"},"content":{"rendered":"<h2>NTS4173PT1G Overview<\/h2>\n<p>The NTS4173PT1G is a -60V P-channel enhancement mode MOSFET from onsemi, maximum drain current -3.5A, RDS(on) 95mOhm at VGS=-10V, in a SOT-23-3 package, suitable for power switching and load switching applications.<\/p>\n<h3>\u4e3b\u8981\u529f\u80fd<\/h3>\n<ul>\n<li>VDS: -60V<\/li>\n<li>ID: -3.5A<\/li>\n<li>RDS(on): 95mOhm at VGS=-10V<\/li>\n<li>VGS: +\/-20V<\/li>\n<li>Gate charge: 15nC<\/li>\n<li>Power dissipation: 1.4W<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>NTS4173PT1G Overview The NTS4173PT1G is a -60V P-channel enhancement mode MOSFET from onsemi, maximum drain current -3.5A, RDS(on) 95mOhm at VGS=-10V, in a SOT-23-3 package, suitable for power switching and load switching applications. Key Features VDS: -60V ID: -3.5A RDS(on): 95mOhm at VGS=-10V VGS: +\/-20V Gate charge: 15nC Power dissipation: 1.4W<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-8064","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"P-Channel MOSFET, 30V, 1.2A, 150mOhm, SC-70-3","date_code":"","package_case":"SC-70-3 (SOT-323) (2.0 x 1.25 x 0.95 mm)","in_stock":3145,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/NTS4173P-D.PDF","price":"$0.10 @ 1ku","product_introduction":"The NTS4173PT1G is a P-Channel enhancement-mode MOSFET from onsemi, rated at 30 V drain-source voltage and 1.2 A continuous drain current in a compact SC-70-3 (SOT-323) package. With an on-resistance of 150 mOhm at 10 V gate drive and a low threshold voltage of 1.5 V, it is optimized for low-voltage switching and load management in battery-operated and portable equipment. The logic-level gate drive makes it compatible with 2.5 V and 3.3 V microcontroller outputs.","working_principle":"As a P-Channel MOSFET, the NTS4173PT1G conducts current from source to drain when the gate voltage is pulled below the source potential. Applying a gate-source voltage more negative than the threshold voltage (-1.5 V) creates an inversion layer (P-channel) in the N-type body, allowing hole conduction. The low on-resistance of 150 mOhm minimizes conduction losses during switching. The gate charge of 10.1 nC enables fast switching transitions, while the input capacitance of 430 pF limits the drive current requirement from microcontroller GPIO pins.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Description<\/th><\/tr><tr><td>1<\/td><td>Gate<\/td><td>Control terminal; voltage applied here modulates channel conduction<\/td><\/tr><tr><td>2<\/td><td>Source<\/td><td>Current source terminal; typically connected to supply rail<\/td><\/tr><tr><td>3<\/td><td>Drain<\/td><td>Current sink terminal; typically connected to load<\/td><\/tr><\/table><p>Package: SC-70-3 (SOT-323). Pin 1 (Gate) is identified by the dot marking on the package.<\/p>\n<p>NTS4173PT1G uses the SC-70-3 (SOT-323) surface-mount package with Pin 1 (Gate) identified by a dot or bevel on the package corner. This is a P-channel enhancement-mode MOSFET with logic-level gate threshold (VGS(th) = 1.0-1.5V). In typical load-switch applications, Source connects to VCC, Drain to the load, and Gate is pulled to VCC (off) or GND (on). The SC-70-3 footprint is footprint-compatible with other SOT-323 MOSFETs but NOT with SOT-23-3. The low gate charge (10.1nC) enables fast switching from microcontroller GPIO pins without additional gate drive circuitry.<\/p>","application_scenarios":"<ul><li><strong>Load Switching<\/strong>: Battery-powered device power management with microcontroller GPIO control<\/li><li><strong>Power MUXing<\/strong>: Selection between multiple power sources in portable systems<\/li><li><strong>Battery Protection<\/strong>: Disconnect switch in Li-ion battery management circuits<\/li><li><strong>Level Shifting<\/strong>: Low-voltage logic to higher-voltage signal translation<\/li><li><strong>LED Backlight Control<\/strong>: PWM dimming driver for display backlight in mobile devices<\/li><\/ul>\n<p>NTS4173PT1G is particularly suited for load-switching applications in battery-powered portable devices where space is at a premium. Its SC-70-3 footprint enables compact power routing in smartphones, tablets, and wearables. The logic-level gate threshold allows direct microcontroller drive without level-shifting circuitry. Common use cases include power gating of RF modules, sensor subsystems, and display backlights in portable electronics. The low gate charge (10.1nC) also makes it suitable for DC-DC converter synchronous rectification at moderate frequencies.<\/p>","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>Vdss<\/th><th>Id<\/th><th>Rds(on)<\/th><th>Package<\/th><\/tr><tr><td>NTS4173NT1G<\/td><td>onsemi<\/td><td>30 V<\/td><td>1.2 A<\/td><td>150 mOhm<\/td><td>SC-70-3<\/td><\/tr><tr><td>SI2333DS<\/td><td>Vishay<\/td><td>30 V<\/td><td>1.4 A<\/td><td>120 mOhm<\/td><td>SOT-23<\/td><\/tr><tr><td>BSS84<\/td><td>Nexperia<\/td><td>50 V<\/td><td>130 mA<\/td><td>10 Ohm<\/td><td>SOT-23<\/td><\/tr><tr><td>DMG2305UX<\/td><td>Diodes Inc<\/td><td>20 V<\/td><td>1.8 A<\/td><td>120 mOhm<\/td><td>SOT-23<\/td><\/tr><tr><td>NTR4173NT1G<\/td><td>onsemi<\/td><td>30 V<\/td><td>1.2 A<\/td><td>150 mOhm<\/td><td>SOT-23<\/td><\/tr><\/table>\n<p>NTS4173PT1G is a P-channel 30V\/1.2A MOSFET in SC-70-3 (SOT-323) from onsemi with 150m\u03a9 RDS(on) at VGS=10V. The NTS4173NT1G variant offers the same specs in a slightly different pinout configuration. BSS84 provides a classic P-channel alternative with higher 250m\u03a9 RDS(on) at lower cost. For lower on-resistance, SI2305DS offers 78m\u03a9 in SOT-23-3 with 2.5A current rating. The NX3008PBK is a dual P-channel option for complementary pair applications.<\/p>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8064","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=8064"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8064\/revisions"}],"predecessor-version":[{"id":8067,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/8064\/revisions\/8067"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=8064"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=8064"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=8064"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=8064"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}