{"id":7591,"date":"2026-06-26T06:51:59","date_gmt":"2026-06-26T06:51:59","guid":{"rendered":"https:\/\/materialparts.com\/bss123ta\/"},"modified":"2026-06-26T14:24:40","modified_gmt":"2026-06-26T14:24:40","slug":"bss123ta","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/bss123ta\/","title":{"rendered":"BSS123TA"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The BSS123TA from Nexperia is an N-channel enhancement-mode Trench MOSFET rated at 100V\/170mA in SOT-23 package, designed for high-speed switching applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n100 V<\/td>\n<\/tr>\n
VGS<\/td>\n+\/-20 V<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1\uff08\u8fde\u7eed\uff09<\/td>\n150-170 mA<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n5.0-6.0 Ohm @ VGS=10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n0.8-2.0 V<\/td>\n<\/tr>\n
Pd<\/td>\n225-360 mW<\/td>\n<\/tr>\n
Input Capacitance<\/td>\n23-29 pF<\/td>\n<\/tr>\n
Gate Charge<\/td>\n2.5 nC @ 10V<\/td>\n<\/tr>\n
Turn-on Delay<\/td>\n8 ns typical<\/td>\n<\/tr>\n
Turn-off Delay<\/td>\n13 ns typical<\/td>\n<\/tr>\n
Technology<\/td>\nTrenchMOS<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSOT-23 (TO-236AB)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to +150 C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Logic-level gate drive compatible<\/li>\n
  • Fast switching with 8ns turn-on delay<\/li>\n
  • TrenchMOS technology for low RDS(ON)<\/li>\n
  • Small SOT-23 footprint (3.0 x 1.4 x 1.1mm)<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • High-speed line drivers<\/li>\n
    • Relay and solenoid drivers<\/li>\n
    • Low-power switching circuits<\/li>\n
    • Level shifting and interface circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The BSS123TA from Nexperia is an N-channel enhancement-mode Trench MOSFET rated at 100V\/170mA in SOT-23 package, designed for high-speed switching applications. Key Specifications Type N-Channel Enhancement MOSFET VDS 100 V VGS +\/-20 V ID (continuous) 150-170 mA RDS(ON) 5.0-6.0 Ohm @ VGS=10V VGS(th) 0.8-2.0 V Pd 225-360 mW Input Capacitance 23-29 pF Gate […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,22],"tags":[],"chip_brand":[140],"class_list":["post-7591","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-video-ics","chip_brand-nexperia"],"acf":{"brief_explanation":"N-channel 100V 170mA Trench MOSFET, SOT-23, logic-level gate, high-speed switching","date_code":"","package_case":"SOT-23 (TO-236AB) 3.0 x 1.4 x 1.1 mm","in_stock":50000,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/BSS123.pdf","price":"$0.03 @ 10ku","product_introduction":"

      The BSS123TA from Nexperia (formerly NXP) is an N-channel enhancement-mode Trench MOSFET in SOT-23 (TO-236AB) surface-mount package. Rated at 100V drain-source voltage and 150-170mA continuous drain current, it features a low 5.0-6.0 Ohm RDS(ON) at VGS=10V and logic-level gate threshold (0.8-2.0V) enabling direct drive from 3.3V and 5V microcontrollers. The TrenchMOS technology provides fast switching with only 8ns turn-on and 13ns turn-off delay times. The ultra-compact SOT-23 package (3.0 x 1.4 x 1.1mm) makes it ideal for space-constrained designs. Note: This device is NRND (Not Recommended for New Designs) - consider BSS138 or 2N7002 as alternatives for new projects.<\/p>","working_principle":"

      The BSS123TA operates as an N-channel enhancement-mode MOSFET. (1) In the off state, with VGS below the threshold voltage (0.8-2.0V), no conductive channel exists between drain and source. The device blocks up to 100V drain-source voltage with leakage current below 100nA. (2) When VGS exceeds the threshold, an inversion layer forms beneath the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(ON)) is 5.0-6.0 Ohm at VGS=10V. At logic-level gate drive (VGS=4.5V), RDS(ON) increases moderately but remains suitable for low-current switching. (3) The TrenchMOS technology uses vertically-oriented gate structures etched into the silicon, providing higher channel density per unit area than planar MOSFETs. This results in lower RDS(ON) for a given die size and faster switching due to reduced gate charge (2.5nC). The input capacitance of 23-29pF allows rapid gate charging from microcontroller GPIO pins.<\/p>","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Gate input (logic-level drive)<\/td><\/tr>
      2<\/td>Source<\/td>Source terminal<\/td><\/tr>
      3<\/td>Drain<\/td>Drain terminal<\/td><\/tr><\/table>","application_scenarios":"
      • High-speed line drivers with 8ns turn-on delay for digital signal switching<\/li>
      • Relay and solenoid drivers with logic-level gate drive from 3.3V MCU<\/li>
      • Low-power switching circuits in battery-operated devices<\/li>
      • Level shifting and interface circuits between different voltage domains<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        BSS138K-7<\/td>Diodes Inc<\/td>50V\/220mA, lower VGS(th), active<\/td><\/tr>
        2N7002K-7<\/td>Diodes Inc<\/td>60V\/300mA, lower RDS(ON)<\/td><\/tr>
        BSS123-7<\/td>Diodes Inc<\/td>Pin-compatible, active product<\/td><\/tr>
        DMN2075U-7<\/td>Diodes Inc<\/td>20V\/750mA, much lower RDS(ON)<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7591","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7591"}],"version-history":[{"count":2,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7591\/revisions"}],"predecessor-version":[{"id":7720,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7591\/revisions\/7720"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7591"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7591"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7591"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7591"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}