{"id":7446,"date":"2026-06-24T06:52:30","date_gmt":"2026-06-24T06:52:30","guid":{"rendered":"https:\/\/materialparts.com\/bsc070n10ns3gatma1\/"},"modified":"2026-06-24T06:52:30","modified_gmt":"2026-06-24T06:52:30","slug":"bsc070n10ns3gatma1","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/bsc070n10ns3gatma1\/","title":{"rendered":"BSC070N10NS3GATMA1"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The BSC070N10NS3GATMA1 from Infineon Technologies is an OptiMOS 3 N-channel power MOSFET rated at 100V with 7m\u03a9 on-resistance and 90A continuous drain current. Designed for synchronous rectification and DC-DC converter applications, it combines low RDS(on) with excellent switching performance in a SuperSO8 (PG-TDSON-8) package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n100 V<\/td>\n<\/tr>\n
RDS(on) max<\/td>\n7 m\u03a9 @ VGS=10V<\/td>\n<\/tr>\n
Continuous ID<\/td>\n90 A (Tc=25\u00b0C)<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n3.5 V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n114 W (Tc=25\u00b0C)<\/td>\n<\/tr>\n
Gate Charge<\/td>\n65 nC (typical)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSuperSO8 (PG-TDSON-8)<\/td>\n<\/tr>\n
Technology<\/td>\nOptiMOS 3 N-channel<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to +175\u00b0C (Tj)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Ultra-low RDS(on) of 7m\u03a9 for minimal conduction losses<\/li>\n
  • 100V breakdown voltage for telecom and industrial power systems<\/li>\n
  • High continuous current rating of 90A for demanding loads<\/li>\n
  • Low gate charge of 65nC enables high-frequency switching<\/li>\n
  • SuperSO8 package with exposed cooling pad for superior thermal performance<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Synchronous rectification in telecom and server power supplies<\/li>\n
    • Primary and secondary side MOSFET in DC-DC converters<\/li>\n
    • Motor drive and inverter applications<\/li>\n
    • Battery management and protection circuits<\/li>\n
    • Solar inverter and energy storage systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The BSC070N10NS3GATMA1 from Infineon Technologies is an OptiMOS 3 N-channel power MOSFET rated at 100V with 7m\u03a9 on-resistance and 90A continuous drain current. Designed for synchronous rectification and DC-DC converter applications, it combines low RDS(on) with excellent switching performance in a SuperSO8 (PG-TDSON-8) package. Key Specifications VDS 100 V RDS(on) max 7 m\u03a9 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7446","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"100V N-channel MOSFET, 7m\u03a9 RDS(on), 90A, OptiMOS 3, SuperSO8","date_code":"","package_case":"SuperSO8 \/ PG-TDSON-8 (5 x 6 x 1 mm)","in_stock":11234,"datasheet":"https:\/\/www.infineon.com\/cms\/en\/product\/power\/mosfet\/bsc070n10ns3gatma1\/","price":".15 @ 1ku","product_introduction":"The BSC070N10NS3GATMA1 is an OptiMOS 3 N-channel power MOSFET from Infineon Technologies, optimized for high-efficiency switching applications requiring low conduction and switching losses. With a voltage rating of 100V and ultra-low on-resistance of 7m\u03a9 at VGS=10V, it delivers up to 90A of continuous drain current in the compact SuperSO8 (PG-TDSON-8) package with an exposed thermal pad. The low gate charge of 65nC typical enables high-frequency switching with minimal driver losses, making it ideal for synchronous rectification in telecom power supplies, DC-DC converter stages, motor drives, and battery management systems.","working_principle":"The BSC070N10NS3GATMA1 operates as a voltage-controlled switch in power conversion circuits. (1) When a gate-source voltage exceeding the threshold (3.5V typical) is applied, the N-channel enhancement-mode MOSFET conducts current from drain to source through the channel formed in the P-body region. The ultra-low RDS(on) of 7m\u03a9 minimizes conduction losses (I\u00b2R) during the on-state. (2) During turn-off, the gate charge (65nC) must be removed from the gate capacitance, and the device transitions through the Miller plateau region where both voltage and current are changing simultaneously, generating switching losses. The OptiMOS 3 trench technology optimizes the cell density and gate charge to minimize total switching losses. (3) The SuperSO8 package with exposed thermal pad provides a low thermal resistance path from junction to PCB, enabling the 114W power dissipation rating and reliable operation at high currents.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Source terminal (connected to thermal pad)<\/td><\/tr>
      2<\/td>Source<\/td>Source terminal<\/td><\/tr>
      3<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4<\/td>Gate<\/td>Gate control input<\/td><\/tr>
      5<\/td>Drain<\/td>Drain terminal (connected to heat slug)<\/td><\/tr>
      6<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      7<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      8<\/td>Drain<\/td>Drain terminal<\/td><\/tr>
      Pad<\/td>Drain<\/td>Exposed thermal pad (drain)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous rectification in telecom 48V power supplies achieving >95% efficiency<\/li>
      • Buck converter low-side switch in server and data center power modules<\/li>
      • Motor drive half-bridge stages for industrial BLDC motor controllers<\/li>
      • Battery protection and management switches in energy storage systems<\/li>
      • Solar micro-inverter switching stages with high efficiency requirements<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        BSC060N10NS3G<\/td>Infineon<\/td>6m\u03a9 lower RDS(on) version<\/td><\/tr>
        BSC100N10NS3G<\/td>Infineon<\/td>10m\u03a9, lower cost alternative<\/td><\/tr>
        IRFB4332PBF<\/td>Infineon<\/td>100V, 29m\u03a9, TO-220 package<\/td><\/tr>
        FDBL86361<\/td>onsemi<\/td>100V, 7.5m\u03a9, SuperSO8<\/td><\/tr>
        NTMFS5C612N<\/td>onsemi<\/td>100V, 6.1m\u03a9, LFPAK56<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7446","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7446"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7446\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7446"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7446"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7446"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7446"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}