The IRF540N from Infineon (formerly International Rectifier) is a 100V N-channel power MOSFET with 0.044 Ohm RDS(on) at 10V gate drive and 33A continuous drain current in a TO-220 through-hole package.<\/p>\n
| \u7c7b\u578b<\/td>\n | N-Channel Enhancement MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VDSS<\/td>\n | 100 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u8eab\u4efd\u8bc1<\/td>\n | 33 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| RDS(on)<\/td>\n | 0.044 Ohm max @ VGS=10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VGS(th)<\/td>\n | 2.0 to 4.0 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Total Gate Charge<\/td>\n | 71 nC typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u529f\u7387\u8017\u6563<\/td>\n | 130 W @ TC=25\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | TO-220AB (3-pin)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The IRF540N from Infineon (formerly International Rectifier) is a 100V N-channel power MOSFET with 0.044 Ohm RDS(on) at 10V gate drive and 33A continuous drain current in a TO-220 through-hole package. Key Specifications Type N-Channel Enhancement MOSFET VDSS 100 V ID 33 A (continuous @ TC=25\u00b0C) RDS(on) 0.044 Ohm max @ VGS=10V VGS(th) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7421","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"100V N-ch MOSFET, 44mR RDS(on), 33A, TO-220","date_code":"","package_case":"TO-220AB (15.60 x 10.40 x 4.60 mm)","in_stock":13500,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf540npbf.pdf","price":"$1.00 @ 1ku","product_introduction":"The IRF540N from Infineon is one of the most widely used N-channel power MOSFETs, offering 100V breakdown, 0.044 Ohm maximum on-resistance, and 33A continuous drain current in a TO-220 package. The extremely low RDS(on) of 44mOhm at VGS=10V minimizes conduction losses in high-current applications. At 33A, the conduction loss is only P = I2R = 332 x 0.044 = 48W. The 100V rating is well-suited for 12V, 24V, and 48V bus systems including automotive, industrial, and battery-powered applications. The N suffix denotes the improved version with lower RDS(on) than the original IRF540. The TO-220 package provides 130W dissipation with heatsink mounting. The 71nC gate charge requires a gate driver capable of delivering several hundred milliamps for fast switching, but allows operation up to 100-200kHz with appropriate drive.","working_principle":"The IRF540N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) Low RDS(on): At 100V, the drift region can be short and heavily doped, enabling the 44mOhm on-resistance. The large die area (approximately 30mm2) further reduces the specific on-resistance. (2) High Current: The 33A continuous rating at TC=25\u00b0C requires adequate heatsinking. In practical applications, the maximum current is thermally limited by the junction-to-ambient thermal resistance and the heatsink quality. (3) Body Diode: The integral body diode (anode at source, cathode at drain) has a forward voltage of approximately 1.3V and a reverse recovery time of several hundred nanoseconds. For synchronous rectification at high frequency, a Schottky diode in parallel with the body diode can reduce recovery losses. (4) Avalanche: The device is rated for single-pulse avalanche energy, providing robustness against voltage spikes from inductive loads that exceed the 100V breakdown.","pin_description":"
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