The IRF9540N from Infineon (formerly International Rectifier) is a -100V P-channel power MOSFET with -0.117 Ohm RDS(on) at -10V gate drive and -19A continuous drain current in a TO-220 through-hole package.<\/p>\n
| \u7c7b\u578b<\/td>\n | P-Channel Enhancement MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VDSS<\/td>\n | -100 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u8eab\u4efd\u8bc1<\/td>\n | -19 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| RDS(on)<\/td>\n | 0.117 Ohm max @ VGS=-10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VGS(th)<\/td>\n | -2.0 to -4.0 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Total Gate Charge<\/td>\n | 48 nC typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u529f\u7387\u8017\u6563<\/td>\n | 110 W @ TC=25\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | TO-220AB (3-pin)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The IRF9540N from Infineon (formerly International Rectifier) is a -100V P-channel power MOSFET with -0.117 Ohm RDS(on) at -10V gate drive and -19A continuous drain current in a TO-220 through-hole package. Key Specifications Type P-Channel Enhancement MOSFET VDSS -100 V ID -19 A (continuous @ TC=25\u00b0C) RDS(on) 0.117 Ohm max @ VGS=-10V VGS(th) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7419","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"-100V P-ch MOSFET, 117mR RDS(on), -19A, TO-220","date_code":"","package_case":"TO-220AB (15.60 x 10.40 x 4.60 mm)","in_stock":8500,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf9540npbf.pdf","price":"$1.20 @ 1ku","product_introduction":"The IRF9540N from Infineon is an industry-standard -100V P-channel power MOSFET in a TO-220 through-hole package. The device features 0.117 Ohm maximum on-resistance at VGS=-10V with -19A continuous drain current rating, making it one of the most popular P-channel MOSFETs for high-side switching and H-bridge applications. The -100V breakdown voltage allows operation from 48V bus systems with margin. The N suffix denotes the improved version with lower RDS(on) compared to the original IRF9540. The TO-220 package provides 110W power dissipation at TC=25\u00b0C and is easily heatsink-mounted for high-power applications. As a P-channel device, it simplifies high-side switch design by eliminating the need for a bootstrap or charge-pump gate drive required by N-channel high-side switches.","working_principle":"The IRF9540N is a P-channel enhancement-mode vertical DMOS power MOSFET. (1) P-Channel Operation: Current flows from source to drain when the gate is pulled below the source voltage (negative VGS). The body diode is oriented with anode at drain and cathode at source, providing a freewheeling path in bridge configurations. (2) High-Side Advantage: In a high-side switch configuration, the source is connected to the positive supply rail and the load is between drain and ground. A P-channel MOSFET only requires the gate to be pulled below the source (to ground for on, to VCC for off), eliminating the bootstrap or charge-pump circuitry needed for N-channel high-side drivers. (3) RDS(on) Penalty: P-channel MOSFETs inherently have approximately 2-3x higher RDS(on) than N-channel devices of the same die area due to the lower mobility of holes compared to electrons. The 117mOhm RDS(on) is relatively high compared to N-channel devices at the same voltage\/current rating, but the simplicity of the gate drive often justifies this trade-off.","pin_description":"
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