{"id":7416,"date":"2026-06-24T05:03:30","date_gmt":"2026-06-24T05:03:30","guid":{"rendered":"https:\/\/materialparts.com\/fqd2n40tm\/"},"modified":"2026-06-24T05:03:30","modified_gmt":"2026-06-24T05:03:30","slug":"fqd2n40tm","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fqd2n40tm\/","title":{"rendered":"FQD2N40TM"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The FQD2N40TM from onsemi is an N-channel 400V\/0.9A MOSFET with 5.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package for low-power offline SMPS applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
VDSS<\/td>\n400 V<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1<\/td>\n0.9 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n
RDS(on)<\/td>\n5.0 Ohm max @ VGS=10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.0 to 4.0 V<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n5.5 nC typical<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n20 W @ TC=25\u00b0C<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDPAK \/ TO-252-3<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 400V N-ch MOSFET with 5.0 Ohm RDS(on) and 5.5nC gate charge in DPAK<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Low-power offline SMPS and adapter primary switch<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FQD2N40TM from onsemi is an N-channel 400V\/0.9A MOSFET with 5.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package for low-power offline SMPS applications. Key Specifications Type N-Channel Enhancement MOSFET VDSS 400 V ID 0.9 A (continuous @ TC=25\u00b0C) RDS(on) 5.0 Ohm max @ VGS=10V VGS(th) 2.0 to 4.0 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-7416","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"400V N-ch MOSFET, 5.0R RDS(on), 0.9A, DPAK TO-252","date_code":"","package_case":"DPAK \/ TO-252-3 (6.60 x 6.10 x 2.30 mm)","in_stock":8400,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fqd2n40-d.pdf","price":"$0.50 @ 1ku","product_introduction":"The FQD2N40TM from onsemi is a 400V N-channel enhancement-mode MOSFET designed for low-power offline switching and adapter applications. The 400V breakdown voltage provides adequate margin for 230VAC offline operation with sufficient derating. The 5.0 Ohm maximum on-resistance at VGS=10V and 0.9A continuous drain current are suitable for primary-side switching in SMPS designs up to approximately 20W. The 5.5nC total gate charge enables efficient switching at 50-200kHz frequencies with minimal gate drive loss. The DPAK (TO-252) surface-mount package provides 20W power dissipation capability with the drain tab for efficient heatsinking. The TM suffix denotes tape and reel packaging.","working_principle":"The FQD2N40TM operates as an N-channel enhancement-mode vertical DMOS power MOSFET. (1) 400V Breakdown: The device uses a thick, lightly-doped drift region to support 400V drain-source voltage in the off state. This drift region is the primary contributor to the 5.0 Ohm on-resistance. (2) Enhancement Mode: The device is normally off. When VGS exceeds the 2.0-4.0V threshold, the inversion channel forms and current flows from drain to source. The body diode provides a freewheeling path for inductive loads. (3) Switching: The 5.5nC gate charge determines the energy required to switch the MOSFET. At 100kHz switching frequency, the gate drive loss is Pgate = Qg x VGS x f = 5.5nC x 10V x 100kHz = 5.5mW, which is negligible. The switching losses are dominated by the crossover time during turn-on and turn-off transitions.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>G<\/td>Gate<\/td><\/tr>
      2<\/td>D<\/td>Drain (connected to tab)<\/td><\/tr>
      3<\/td>S<\/td>Source<\/td><\/tr>
      Tab<\/td>D<\/td>Drain (thermal\/electrical)<\/td><\/tr><\/table>","application_scenarios":"
      • Low-power offline SMPS and adapter primary switch at 400V<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>FQD4N25TM<\/td>DPAK<\/td>250V, 1.8A, lower voltage<\/td><\/tr>
        Infineon<\/td>IPD50R3K0P7S<\/td>DPAK<\/td>500V, SuperJunction<\/td><\/tr>
        ST<\/td>STD2NK40ZT4<\/td>DPAK<\/td>400V, 1.2A<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7416","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7416"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7416\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7416"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7416"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7416"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7416"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}