The FQD4N25TM from onsemi is an N-channel 250V\/1.8A MOSFET with 2.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package, designed for low-voltage switching applications.<\/p>\n
| \u7c7b\u578b<\/td>\n | N-Channel Enhancement MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VDSS<\/td>\n | 250 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u8eab\u4efd\u8bc1<\/td>\n | 1.8 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| RDS(on)<\/td>\n | 2.0 Ohm max @ VGS=10V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| VGS(th)<\/td>\n | 2.0 to 4.0 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| Total Gate Charge<\/td>\n | 6.0 nC typical<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u529f\u7387\u8017\u6563<\/td>\n | 25 W @ TC=25\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | DPAK \/ TO-252-3<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The FQD4N25TM from onsemi is an N-channel 250V\/1.8A MOSFET with 2.0 Ohm RDS(on) at 10V gate drive in a DPAK (TO-252) surface-mount package, designed for low-voltage switching applications. Key Specifications Type N-Channel Enhancement MOSFET VDSS 250 V ID 1.8 A (continuous @ TC=25\u00b0C) RDS(on) 2.0 Ohm max @ VGS=10V VGS(th) 2.0 to 4.0 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-7415","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"250V N-ch MOSFET, 2.0R RDS(on), 1.8A, DPAK TO-252","date_code":"","package_case":"DPAK \/ TO-252-3 (6.60 x 6.10 x 2.30 mm)","in_stock":9300,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fqd4n25-d.pdf","price":"$0.45 @ 1ku","product_introduction":"The FQD4N25TM from onsemi is a 250V N-channel enhancement-mode MOSFET designed for low-power offline switching applications. The device features 2.0 Ohm maximum on-resistance at VGS=10V and 1.8A continuous drain current in the compact DPAK (TO-252) surface-mount package. The 250V breakdown voltage makes it suitable for universal offline (85-265VAC) SMPS primary-side switching at output power levels up to approximately 30W. The 6nC total gate charge enables efficient switching at moderate frequencies (50-200kHz) with simple gate drive circuits. The DPAK package provides a good balance of thermal performance and board space, with 25W power dissipation capability at TC=25\u00b0C. The TM suffix indicates tape and reel packaging.","working_principle":"The FQD4N25TM is an N-channel enhancement-mode vertical DMOS power MOSFET. (1) N-Channel Enhancement: The device is normally off. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms under the gate oxide, creating a conduction channel between source and drain. The body diode (anode at source, cathode at drain) provides a freewheeling path for inductive loads. (2) Vertical DMOS: The vertical current flow (from drain at the bottom to source at the top) maximizes the channel density and minimizes the die area for a given RDS(on). The double-diffused MOS (DMOS) cell structure provides a short channel length for low on-resistance while maintaining adequate breakdown voltage. (3) High-Voltage Structure: The 250V breakdown voltage is achieved through a lightly-doped drain drift region that absorbs the depletion layer under high VDS. This drift region contributes to the on-resistance, hence the 2.0 Ohm RDS(on) is typical for a 250V device at this current rating.","pin_description":"
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