{"id":7398,"date":"2026-06-24T04:53:31","date_gmt":"2026-06-24T04:53:31","guid":{"rendered":"https:\/\/materialparts.com\/ntr1p02lt1g\/"},"modified":"2026-06-24T04:53:31","modified_gmt":"2026-06-24T04:53:31","slug":"ntr1p02lt1g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ntr1p02lt1g\/","title":{"rendered":"NTR1P02LT1G"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The NTR1P02LT1G from onsemi is a -20V P-channel enhancement-mode MOSFET with 0.80 Ohm RDS(on) at VGS=-10V, -0.4A continuous drain current, and low threshold voltage for logic-level drive in a SOT-23 package.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>\u7c7b\u578b<\/td>\n<td>P-Channel Enhancement MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS<\/td>\n<td>-20 V<\/td>\n<\/tr>\n<tr>\n<td>VGS<\/td>\n<td>+\/-8 V<\/td>\n<\/tr>\n<tr>\n<td>\u8eab\u4efd\u8bc1\uff08\u8fde\u7eed\uff09<\/td>\n<td>-0.4 A @ TA=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>ID (pulsed)<\/td>\n<td>-1.0 A<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) @ VGS=-10V<\/td>\n<td>0.80 Ohm max<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) @ VGS=-4.5V<\/td>\n<td>1.10 Ohm max<\/td>\n<\/tr>\n<tr>\n<td>VGS(th)<\/td>\n<td>-0.4 to -1.0 V<\/td>\n<\/tr>\n<tr>\n<td>\u529f\u7387\u8017\u6563<\/td>\n<td>225 mW @ TA=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>SOT-23-3<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>Low 0.80 Ohm RDS(on) at -10V for efficient battery load switching<\/li>\n<li>Ultra-low threshold (VGS(th) max -1.0V) for sub-3V logic-level drive<\/li>\n<li>Compact SOT-23 package for portable and battery-powered applications<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Battery load switching and power management in portable devices<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The NTR1P02LT1G from onsemi is a -20V P-channel enhancement-mode MOSFET with 0.80 Ohm RDS(on) at VGS=-10V, -0.4A continuous drain current, and low threshold voltage for logic-level drive in a SOT-23 package. Key Specifications Type P-Channel Enhancement MOSFET VDS -20 V VGS +\/-8 V ID (continuous) -0.4 A @ TA=25\u00b0C ID (pulsed) -1.0 A [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-7398","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"-20V P-ch MOSFET, 0.80R RDS(on), -0.4A, low Vth, SOT-23","date_code":"","package_case":"SOT-23-3 (2.90 x 1.30 x 1.00 mm)","in_stock":12500,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/ntr0202pl-d.pdf","price":"$0.06 @ 3ku","product_introduction":"The NTR1P02LT1G from onsemi is a P-channel enhancement-mode MOSFET designed for battery-powered portable applications. The device features a low on-resistance of 0.80 Ohm maximum at VGS=-10V and 1.10 Ohm at VGS=-4.5V. The ultra-low threshold voltage (VGS(th) max = -1.0V) enables direct drive from 2.5V to 3V logic supplies, making it ideal for single-cell Li-Ion battery switching. The -20V drain-source rating provides adequate margin for 3V to 12V battery bus applications. The compact SOT-23 package minimizes board space in portable designs. The device is suitable for load switching, battery disconnect, and power routing in cell phones, PDAs, and other battery-operated equipment.","working_principle":"The NTR1P02LT1G is a P-channel enhancement-mode MOSFET using onsemi's planar stripe DMOS technology. (1) P-Channel Enhancement: The device is normally off (no channel at VGS=0). When VGS is pulled below the threshold (negative), an inversion layer forms under the gate oxide, creating a conduction channel between source and drain. The very low threshold (-0.4 to -1.0V) means that only a small gate drive is needed to turn the device on. (2) Low RDS(on): The planar stripe DMOS cell geometry provides low specific on-resistance. At VGS=-4.5V (typical 3.3V system gate drive), RDS(on) is only 1.10 Ohm maximum, resulting in low conduction losses at the rated 0.4A drain current (P = I2R = 0.16 x 1.1 = 0.18W). (3) Logic-Level Drive: With VGS(th) as low as -0.4V, the MOSFET can be driven from 2.5V logic. At VGS=-2.5V, the device provides sufficient overdrive for many low-current switching applications.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>G<\/td><td>Gate<\/td><\/tr><tr><td>2<\/td><td>S<\/td><td>Source<\/td><\/tr><tr><td>3<\/td><td>D<\/td><td>Drain<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Battery load switching in cell phones and PDAs at 2.5-5V<\/li><li>Low-current power routing and battery disconnect with logic-level gate<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>onsemi<\/td><td>FDV304P<\/td><td>SOT-23<\/td><td>-25V, 1.1 Ohm, ESD Zener<\/td><\/tr><tr><td>Diodes Inc<\/td><td>DMP2305U-7<\/td><td>SOT-23<\/td><td>-20V, 0.65 Ohm, lower Ron<\/td><\/tr><tr><td>Vishay<\/td><td>SI2323DS-T1-E3<\/td><td>SOT-23<\/td><td>-20V, 0.6 Ohm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7398","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7398"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7398\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7398"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7398"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7398"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7398"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}