The S3M-E3\/57T from Vishay is a 3A, 1000V standard recovery surface-mount rectifier in a SMC (DO-214AB) package. With 1.15V forward voltage and 100A surge current capability, it provides general-purpose AC rectification for power supply and polarity protection applications.<\/p>\n
| Peak Repetitive Reverse Voltage<\/td>\n | 1000 V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Average Forward Current<\/td>\n | 3.0 A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Forward Voltage<\/td>\n | 1.15 V max at 2.5A<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Reverse Leakage Current<\/td>\n | 10 uA max at rated Vr<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Peak Forward Surge Current<\/td>\n | 100 A (8.3ms half-sine)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Reverse Recovery Time<\/td>\n | 2.5 us<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| Junction Capacitance<\/td>\n | 60 pF at 4V, 1MHz<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55C to +150C<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The S3M-E3\/57T from Vishay is a 3A, 1000V standard recovery surface-mount rectifier in a SMC (DO-214AB) package. With 1.15V forward voltage and 100A surge current capability, it provides general-purpose AC rectification for power supply and polarity protection applications. Key Specifications Peak Repetitive Reverse Voltage 1000 V Average Forward Current 3.0 A Forward Voltage […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[136],"class_list":["post-7266","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-vishay"],"acf":{"brief_explanation":"3A 1000V rectifier, 1.15V Vf, SMC DO-214AB, 100A surge, 2.5us trr, glass passivated","date_code":"","package_case":"SMC \/ DO-214AB (7.11 x 6.22 x 2.42 mm)","in_stock":10517,"datasheet":"https:\/\/www.vishay.com\/docs\/88751\/ss32.pdf","price":"$0.07 @ 850pcs","product_introduction":"The S3M-E3\/57T from Vishay Semiconductor is a 3A, 1000V standard recovery surface-mount glass-passivated rectifier in a SMC (DO-214AB) package. The device belongs to the S3A through S3M series of versatile, high-efficiency standard recovery power diodes that offer a range of reverse voltage ratings from 50V (S3A) to 1000V (S3M) at a common 3A forward current rating. The glass-passivated junction construction ensures reliable high-voltage blocking with low leakage current of 10uA maximum at the rated reverse voltage. The 1.15V maximum forward voltage at 2.5A provides efficient rectification with manageable power dissipation. The 100A peak forward surge current rating (8.3ms single half-sine wave) enables the device to withstand the high inrush currents that occur during initial power application to capacitive loads. The 2.5us reverse recovery time is suitable for standard-frequency AC line rectification at 50\/60Hz and moderate-frequency switching applications. The SMC (DO-214AB) package provides a low-profile surface-mount footprint with excellent thermal performance through the cathode-side terminal, which serves as the primary thermal path to the PCB copper.","working_principle":"The S3M-E3\/57T is a PN junction rectifier with glass-passivated construction. (1) PN Junction: The device consists of a P-type semiconductor region and an N-type semiconductor region forming a PN junction. When forward-biased (anode positive relative to cathode), current flows easily with a voltage drop of approximately 1.15V at rated current. When reverse-biased, the depletion region blocks current flow up to the 1000V rating. (2) Glass Passivation: A glass layer covers the junction edges, providing environmental protection and preventing surface leakage that could degrade the reverse blocking capability. This construction ensures reliable operation at high voltage with minimal reverse leakage current. (3) Forward Conduction: Under forward bias, majority carriers from both regions are injected across the junction, establishing a low-resistance current path. The 1.15V forward voltage includes the junction barrier voltage and the bulk resistance drop. (4) Reverse Blocking: Under reverse bias, the depletion region widens, blocking current flow. The 10uA maximum leakage current at rated voltage ensures minimal power loss in the blocking state. (5) Reverse Recovery: When switching from forward conduction to reverse blocking, stored minority carriers must be removed from the junction region. The 2.5us recovery time represents the duration of this carrier removal process.","pin_description":"
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