The B5819W-SL from Multicomp\/Silan is a 1A, 40V Schottky barrier rectifier in a SOD-123FL package. With 0.6V forward voltage and compact flat-lead footprint, it provides efficient rectification for low-power switching supplies and reverse protection.<\/p>\n
| Reverse Voltage<\/td>\n | 40 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Forward Current<\/td>\n | 1 A<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Forward Voltage<\/td>\n | 0.6 V (max at 1A)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Reverse Current<\/td>\n | 200 uA (max at 40V)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Junction Temperature<\/td>\n | -65C to +125C<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The B5819W-SL from Multicomp\/Silan is a 1A, 40V Schottky barrier rectifier in a SOD-123FL package. With 0.6V forward voltage and compact flat-lead footprint, it provides efficient rectification for low-power switching supplies and reverse protection. Key Specifications Reverse Voltage 40 V Forward Current 1 A Forward Voltage 0.6 V (max at 1A) Reverse Current […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,58],"tags":[],"chip_brand":[307],"class_list":["post-7189","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-thyristors","chip_brand-multicomp"],"acf":{"brief_explanation":"1A 40V Schottky diode, 0.6V VF, SOD-123FL, low profile, rectification\/protection","date_code":"","package_case":"SOD-123FL (2.65 x 1.60 x 0.70 mm)","in_stock":9821,"datasheet":"https:\/\/www.farnell.com\/datasheets\/2309046.pdf","price":"$0.08 @ 1ku","product_introduction":"The B5819W-SL is a 1A, 40V Schottky barrier rectifier in a SOD-123FL (flat-lead) surface-mount package. The device provides efficient rectification with a low 0.6V maximum forward voltage at 1A, reducing conduction losses in low-power power supply applications. The 40V reverse voltage rating is suitable for 5V and 12V power rails. The Schottky construction provides near-zero reverse recovery time, making it ideal for high-frequency switching applications where PN junction diode recovery losses would be significant. The SOD-123FL package features a flat-lead design with a low 0.70mm profile, suitable for space-constrained and low-height PCB designs. The guard ring structure provides protection against voltage transients. The device is rated for -65C to +125C operation with 200uA maximum reverse leakage at 40V and 25C.","working_principle":"The B5819W-SL uses a metal-semiconductor (Schottky) junction for efficient rectification. (1) Schottky Barrier: A rectifying contact between metal and N-type silicon creates a barrier that allows current flow in one direction with minimal voltage drop. Only majority carriers participate, eliminating minority carrier storage. (2) Forward Conduction: When the anode is positive relative to the cathode, electrons cross the barrier with minimal energy loss, producing the low 0.6V forward drop. (3) Reverse Blocking: When reverse biased, the Schottky barrier prevents current flow. The lower barrier height results in higher leakage current (200uA max at 40V) compared to PN junctions. (4) Fast Recovery: The absence of minority carrier storage means the diode switches off nearly instantaneously when the forward current drops to zero, unlike PN diodes that require recovery time to clear stored charge.","pin_description":"
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