The S3M-E3\/57T from Vishay is a 3A, 1000V general-purpose silicon rectifier diode in an SMB (DO-214AA) package. Designed for high-voltage rectification, it provides fast switching and low forward voltage drop for power supply and rectification applications.<\/p>\n
| Forward Current (IF)<\/td>\n | 3 A<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Reverse Voltage (VR)<\/td>\n | 1000 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Forward Voltage (VF)<\/td>\n | 1.35 V (max at 3A)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Reverse Current (IR)<\/td>\n | 5 uA (max at 1000V)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Reverse Recovery Time<\/td>\n | 75 ns (typical)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55C to +150C<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The S3M-E3\/57T from Vishay is a 3A, 1000V general-purpose silicon rectifier diode in an SMB (DO-214AA) package. Designed for high-voltage rectification, it provides fast switching and low forward voltage drop for power supply and rectification applications. Key Specifications Forward Current (IF) 3 A Reverse Voltage (VR) 1000 V Forward Voltage (VF) 1.35 V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[136],"class_list":["post-7163","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-vishay"],"acf":{"brief_explanation":"3A 1000V rectifier diode, 1.35V VF, 75ns trr, SMB package, high-voltage rectification","date_code":"","package_case":"SMB (DO-214AA) (5.30 x 2.60 x 2.20 mm)","in_stock":11915,"datasheet":"https:\/\/www.vishay.com\/docs\/88536\/s3m.pdf","price":"$0.22 @ 1ku","product_introduction":"The S3M-E3\/57T from Vishay is a 3A, 1000V general-purpose silicon rectifier diode in an SMB (DO-214AA) surface-mount package. The device provides reliable high-voltage rectification with 1.35V maximum forward voltage at rated current and only 5uA reverse leakage at 1000V. The 75ns typical reverse recovery time supports medium-frequency switching applications up to several tens of kilohertz. The SMB package provides a compact surface-mount footprint with adequate power dissipation for 3A average current. The device can withstand 80A peak surge current, making it suitable for capacitive load turn-on conditions. The -55C to +150C operating temperature range supports automotive and industrial environments. The S3M is part of Vishay's industry-standard S-series rectifier family available in multiple package options.","working_principle":"The S3M-E3\/57T is a P-N junction rectifier diode. (1) Forward Bias: When the anode voltage exceeds the cathode by more than the forward voltage threshold (approximately 0.7V), majority carriers are injected across the junction, and current flows from anode to cathode. The forward voltage is 1.35V maximum at 3A due to the resistive component of the semiconductor and contacts. (2) Reverse Bias: When the cathode voltage exceeds the anode, the depletion region widens and blocks current flow. The 1000V reverse voltage rating is determined by the doping profile and thickness of the drift region. Reverse leakage current is only 5uA at rated voltage. (3) Reverse Recovery: When the diode transitions from forward conduction to reverse blocking, stored minority carriers must be swept out of the junction. This recovery process takes approximately 75ns, during which reverse current flows briefly. (4) Thermal: The forward voltage has a negative temperature coefficient (-2mV\/C typical), which promotes current sharing in parallel diode configurations.","pin_description":"
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