{"id":7055,"date":"2026-06-23T02:56:10","date_gmt":"2026-06-23T02:56:10","guid":{"rendered":"https:\/\/materialparts.com\/ntd24n06lt4g\/"},"modified":"2026-06-23T02:56:10","modified_gmt":"2026-06-23T02:56:10","slug":"ntd24n06lt4g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ntd24n06lt4g\/","title":{"rendered":"NTD24N06LT4G"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The NTD24N06LT4G from onsemi is an N-channel logic-level power MOSFET rated at 60 V VDS and 24 A ID in a DPAK (TO-252) surface-mount package. With RDS(on) of 36 m\u03a9 typical at VGS = 5 V, it is designed for low-voltage, high-speed switching applications in power supplies, converters, motor controls, and bridge circuits, and is AEC-Q101 qualified for automotive use.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS (Drain-Source Voltage)<\/td>\n60 V<\/td>\n<\/tr>\n
ID (Continuous, TC=25\u00b0C)<\/td>\n24 A<\/td>\n<\/tr>\n
RDS(on) @ VGS=5V, ID=10A<\/td>\n36 m\u03a9 (typ), 45 m\u03a9 (max)<\/td>\n<\/tr>\n
VGS(th) Range<\/td>\n1.7 V to 5.0 V<\/td>\n<\/tr>\n
Qg (Total Gate Charge, typ)<\/td>\n16 nC @ VGS=5V<\/td>\n<\/tr>\n
\u96ea\u5d29\u80fd\u6e90\uff08EAS\uff09<\/td>\n162 mJ (single pulse)<\/td>\n<\/tr>\n
Power Dissipation (TA=25\u00b0C)<\/td>\n62.5 W (TC), 1.88 W (TA on FR4)<\/td>\n<\/tr>\n
Operating Junction Temp<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
\u8d44\u683c<\/td>\nAEC-Q101<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Logic-level gate drive (VGS=5V) for direct microcontroller interface<\/li>\n
  • Low RDS(on) of 36 m\u03a9 typical minimizes conduction losses<\/li>\n
  • High avalanche energy rating of 162 mJ for rugged unclamped switching<\/li>\n
  • AEC-Q101 qualified and PPAP capable for automotive applications<\/li>\n
  • Pb-free and RoHS compliant DPAK surface-mount package<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Switching power supplies and DC-DC converters<\/li>\n
    • Power motor controls and bridge circuits<\/li>\n
    • Automotive load management and motor drives<\/li>\n
    • Battery management systems and protection circuits<\/li>\n
    • Load switching and hot-swap applications<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NTD24N06LT4G from onsemi is an N-channel logic-level power MOSFET rated at 60 V VDS and 24 A ID in a DPAK (TO-252) surface-mount package. With RDS(on) of 36 m\u03a9 typical at VGS = 5 V, it is designed for low-voltage, high-speed switching applications in power supplies, converters, motor controls, and bridge circuits, […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-7055","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"60V N-channel MOSFET, 24A, 45m\u03a9 @5V, logic-level, DPAK, AEC-Q101, avalanche rated","date_code":"","package_case":"DPAK (TO-252-3, 6.73 x 6.22 x 2.38 mm)","in_stock":5432,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/ntd24n06l-d.pdf","price":"$0.45 @ 1ku","product_introduction":"The NTD24N06LT4G from onsemi is an N-channel logic-level power MOSFET in a DPAK (TO-252) surface-mount package, designed for low-voltage high-speed switching applications. Rated at 60 V drain-source voltage and 24 A continuous drain current, it features low RDS(on) of 36 m\u03a9 typical at VGS = 5 V, enabling direct drive from 5 V logic. The device is AEC-Q101 qualified and PPAP capable, meeting automotive reliability requirements. With 162 mJ single-pulse avalanche energy rating and 62.5 W power dissipation at TC = 25\u00b0C, the device is well-suited for demanding switching applications in power supplies, motor controls, and battery management systems.","working_principle":"The NTD24N06LT4G is an N-channel enhancement-mode vertical power MOSFET using DMOS technology. (1) Cell Structure: A high-density cell layout with DMOS planar stripe geometry provides low specific on-resistance while maintaining robust avalanche capability. The vertical current flow from drain (on the back of the die) through the drift region to source minimizes resistance. (2) Gate Drive: The logic-level threshold (1.7-5.0 V) allows full enhancement at VGS = 5 V, achieving 36 m\u03a9 typical RDS(on). Gate charge of 16 nC at VGS = 5 V balances switching speed with gate drive power consumption. (3) Avalanche Operation: The device is rated for 162 mJ single-pulse avalanche energy, meaning it can safely absorb the energy stored in an unclamped inductive load without damage. (4) Body Diode: The intrinsic body diode provides reverse conduction capability, useful in half-bridge and synchronous rectification topologies.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (control terminal)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab\/back)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>MOSFET source and body diode anode<\/td><\/tr><\/table>","application_scenarios":"
      • Switching power supplies and DC-DC converter output stages with logic-level drive<\/li>
      • Automotive motor control and bridge circuits with AEC-Q101 qualification<\/li>
      • Battery management system load switches and protection circuits<\/li>
      • Power tool and appliance motor drive circuits requiring rugged avalanche performance<\/li>
      • Hot-swap and inrush current limiting circuits in server and telecom equipment<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>FDBL86361<\/td>Power56<\/td>60V, 40A, lower RDS(on)<\/td><\/tr>
        Infineon<\/td>IPD50N06S2L-23<\/td>DPAK<\/td>60V, 50A, 23m\u03a9<\/td><\/tr>
        STMicroelectronics<\/td>STB80NF55L-06T4<\/td>DPAK<\/td>55V, 80A, logic-level<\/td><\/tr>
        Vishay<\/td>SiRA20DP-T1-GE3<\/td>PowerPAK SO-8<\/td>60V, 20A, 22m\u03a9<\/td><\/tr>
        onsemi<\/td>NTD20N06LT4G<\/td>DPAK<\/td>60V, 20A, lower current<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7055","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7055"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7055\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7055"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7055"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7055"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7055"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}