{"id":7053,"date":"2026-06-23T02:56:06","date_gmt":"2026-06-23T02:56:06","guid":{"rendered":"https:\/\/materialparts.com\/irlb8721pbf\/"},"modified":"2026-06-23T02:56:06","modified_gmt":"2026-06-23T02:56:06","slug":"irlb8721pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/irlb8721pbf\/","title":{"rendered":"IRLB8721PBF"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IRLB8721PBF from Infineon Technologies (formerly International Rectifier) is an N-channel HEXFET power MOSFET rated at 30 V VDS and 62 A ID in a through-hole TO-220AB package. With extremely low RDS(on) of 8.7 m\u03a9 at VGS = 10 V and 16 m\u03a9 at VGS = 4.5 V, it is optimized for low-frequency, high-current switching applications including UPS\/inverters, synchronous buck converters, and DC motor drives.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS (Drain-Source Voltage)<\/td>\n30 V<\/td>\n<\/tr>\n
ID (Continuous, TC=25\u00b0C)<\/td>\n62 A<\/td>\n<\/tr>\n
RDS(on) @ VGS=10V<\/td>\n6.5 m\u03a9 (typ), 8.7 m\u03a9 (max)<\/td>\n<\/tr>\n
RDS(on) @ VGS=4.5V<\/td>\n13.1 m\u03a9 (typ), 16 m\u03a9 (max)<\/td>\n<\/tr>\n
Qg (Total Gate Charge, typ)<\/td>\n7.6 nC @ VGS=4.5V<\/td>\n<\/tr>\n
VGS(th) Range<\/td>\n1.35 V to 2.35 V<\/td>\n<\/tr>\n
Power Dissipation (TC=25\u00b0C)<\/td>\n65 W<\/td>\n<\/tr>\n
\u96ea\u5d29\u80fd\u6e90\uff08EAS\uff09<\/td>\n98 mJ (single pulse)<\/td>\n<\/tr>\n
Operating Junction Temp<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Ultra-low RDS(on) at logic-level VGS=4.5V enabling direct microcontroller drive<\/li>\n
  • Fully characterized avalanche voltage and current for rugged switching applications<\/li>\n
  • Low gate charge (7.6 nC typical) for efficient high-frequency switching<\/li>\n
  • Industry-standard TO-220AB through-hole package<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • UPS and inverter power stages<\/li>\n
    • High-frequency synchronous buck converters for processor power<\/li>\n
    • DC-DC converters with synchronous rectification<\/li>\n
    • DC motor drives and battery management systems<\/li>\n
    • Load switching and hot-swap circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRLB8721PBF from Infineon Technologies (formerly International Rectifier) is an N-channel HEXFET power MOSFET rated at 30 V VDS and 62 A ID in a through-hole TO-220AB package. With extremely low RDS(on) of 8.7 m\u03a9 at VGS = 10 V and 16 m\u03a9 at VGS = 4.5 V, it is optimized for low-frequency, […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7053","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"30V N-channel MOSFET, 62A, 8.7m\u03a9 @10V, TO-220AB, logic-level gate, low RDS(on)","date_code":"","package_case":"TO-220AB (through-hole, 3-pin)","in_stock":9456,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irlb8721pbf.pdf?fileId=5546d462533600a40153566056732591","price":"$0.37 @ 1ku","product_introduction":"The IRLB8721PBF is an N-channel HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier) in a TO-220AB through-hole package. Designed with trench MOSFET technology, it achieves extremely low on-resistance of 8.7 m\u03a9 maximum at VGS = 10 V and 16 m\u03a9 at VGS = 4.5 V, making it suitable for logic-level gate drive directly from microcontrollers. The device is rated for 30 V drain-source voltage and 62 A continuous drain current at TC = 25\u00b0C. With total gate charge of only 7.6 nC typical and avalanche energy rating of 98 mJ, it offers an excellent balance of conduction loss, switching loss, and ruggedness for low-voltage power conversion applications.","working_principle":"The IRLB8721PBF is an N-channel enhancement-mode vertical power MOSFET constructed using trench gate technology. (1) Cell Structure: Thousands of parallel-connected trench MOSFET cells share drain and source regions, achieving very low specific on-resistance through high cell density. The trench gate geometry eliminates the JFET region present in planar MOSFETs, reducing RDS(on). (2) Gate Drive: The low threshold voltage (1.35-2.35 V) allows logic-level drive at VGS = 4.5 V with 16 m\u03a9 maximum RDS(on). Full enhancement at VGS = 10 V yields 8.7 m\u03a9 maximum. The ultra-low gate charge (7.6 nC) minimizes gate drive power loss. (3) Body Diode: An intrinsic p-n junction body diode provides reverse conduction with 1.0 V forward voltage. The reverse recovery time of 16-24 ns and charge of 14-21 nC make it suitable for synchronous rectification. (4) Avalanche Capability: The device is fully characterized for single-pulse avalanche energy (98 mJ), ensuring reliable operation during unclamped inductive switching events.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (control terminal)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>MOSFET source and body diode anode<\/td><\/tr><\/table>","application_scenarios":"
      • UPS and power inverter output stages requiring high current and low conduction loss<\/li>
      • Synchronous buck converters for computer processor VRM applications<\/li>
      • Isolated DC-DC converters with synchronous rectification for telecom and industrial<\/li>
      • DC motor H-bridge drivers and battery management load switches<\/li>
      • Hot-swap and OR-ing circuits in redundant power supply systems<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IRLB8743PBF<\/td>TO-220<\/td>30V, 100A, lower RDS(on)<\/td><\/tr>
        Infineon<\/td>IRLZ44NPBF<\/td>TO-220<\/td>55V, 47A, higher voltage<\/td><\/tr>
        onsemi<\/td>NTD5867NL<\/td>DPAK<\/td>30V, 50A, SMD alternative<\/td><\/tr>
        Vishay<\/td>SIR822ADP-T1-RE3<\/td>PowerPAK SO-8<\/td>30V, 80A, SMD<\/td><\/tr>
        Infineon<\/td>BSC010NE2LS5<\/td>SuperSO8<\/td>25V, 100A, very low RDS(on)<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7053","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7053"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7053\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7053"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7053"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7053"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7053"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}