{"id":7009,"date":"2026-06-22T12:43:49","date_gmt":"2026-06-22T12:43:49","guid":{"rendered":"https:\/\/materialparts.com\/irlr2905ztrpbf-2\/"},"modified":"2026-06-22T12:43:49","modified_gmt":"2026-06-22T12:43:49","slug":"irlr2905ztrpbf-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/irlr2905ztrpbf-2\/","title":{"rendered":"IRLR2905ZTRPBF"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IRLR2905ZTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET\u00ae power MOSFET in a DPAK (TO-252) surface-mount package. It features a 55V drain-source voltage rating, 42A continuous drain current at 25\u00b0C, and low 13.5m\u03a9 maximum on-resistance at VGS=10V. The logic-level gate threshold (1-3V) enables direct drive from 5V microcontrollers.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Drain-Source Voltage (VDSS)<\/td>\n55V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n42A @ TC=25\u00b0C (Package Limited: 60A)<\/td>\n<\/tr>\n
RDS(ON) @ VGS=10V<\/td>\n11m\u03a9 (Typ), 13.5m\u03a9 (Max)<\/td>\n<\/tr>\n
RDS(ON) @ VGS=4.5V<\/td>\n22.5m\u03a9 (Max)<\/td>\n<\/tr>\n
Gate Threshold (VGS(th))<\/td>\n1.0V ~ 3.0V<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n23nC (Typ) @ VGS=5V<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563 (PD)<\/td>\n110W @ TC=25\u00b0C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDPAK \/ TO-252-3 (6.73 x 6.22mm)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C ~ +175\u00b0C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Ultra-low RDS(ON) of 11m\u03a9 typical at VGS=10V<\/li>\n
  • Logic-level gate drive compatible with 5V microcontrollers<\/li>\n
  • Low gate charge of 23nC for efficient switching<\/li>\n
  • Avalanche rated for ruggedness in inductive loads<\/li>\n
  • 100% avalanche tested for reliability<\/li>\n
  • Lead-free (Pb-free) construction (TRPBF suffix)<\/td>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • DC-DC converter synchronous rectification<\/li>\n
    • Motor drive and control<\/li>\n
    • Battery management and protection<\/li>\n
    • Load switching and power distribution<\/li>\n
    • Automotive electronics<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRLR2905ZTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET\u00ae power MOSFET in a DPAK (TO-252) surface-mount package. It features a 55V drain-source voltage rating, 42A continuous drain current at 25\u00b0C, and low 13.5m\u03a9 maximum on-resistance at VGS=10V. The logic-level gate threshold (1-3V) enables direct drive from 5V microcontrollers. Key […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7009","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"55V N-channel MOSFET, 42A, 13.5m\u03a9 RDS(ON), logic-level gate in DPAK package","date_code":"","package_case":"DPAK \/ TO-252-3 (6.73 x 6.22 x 2.38 mm)","in_stock":8870,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IRLR2905ZPbF-DS-v01_00-EN.pdf","price":"$0.46 @ 1ku","product_introduction":"The IRLR2905ZTRPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area in the popular DPAK surface-mount package. The 55V rating makes it suitable for 12V and 24V automotive and industrial systems. The logic-level gate threshold (1-3V) allows direct drive from 5V microcontroller GPIO pins without additional gate drive circuitry, simplifying designs. The low 11m\u03a9 typical RDS(ON) at 10V gate drive minimizes conduction losses in high-current applications such as synchronous buck converters and motor drive bridges.","working_principle":"As an N-channel enhancement-mode MOSFET, the IRLR2905Z is normally off when VGS=0V. When a positive voltage is applied between gate and source exceeding the threshold voltage (1-3V), an inversion layer forms in the P-body region under the gate oxide, creating an N-type channel that allows current to flow from drain to source. The HEXFET cell geometry uses a dense array of hexagonal cells to maximize the channel width per unit area, achieving the low 13.5m\u03a9 RDS(ON). The body diode formed by the P-body and N-drift junction provides an intrinsic anti-parallel diode useful in bridge and synchronous rectifier topologies.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>MOSFET gate control input<\/td><\/tr>
      2<\/td>Drain<\/td>MOSFET drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>MOSFET source<\/td><\/tr>
      Tab<\/td>Drain<\/td>Drain connection (heatsink tab)<\/td><\/tr><\/table>","application_scenarios":"
      • 12V Automotive Load Switch<\/b>: Logic-level gate directly driven by 5V MCU, 42A current rating handles headlights, fans, pumps<\/li>
      • Synchronous Buck Rectifier<\/b>: 11m\u03a9 RDS(ON) replaces Schottky diode for >5% efficiency improvement in buck converters<\/li>
      • 24V Motor H-Bridge<\/b>: 55V rating provides margin in 24V industrial motor drives with inductive kickback<\/li>
      • Battery Protection FET<\/b>: Low RDS(ON) minimizes voltage drop and power dissipation in battery disconnect circuits<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        IRLR2905ZPBF<\/td>Infineon<\/td>Same die, tube packaging (no T&R)<\/td><\/tr>
        IRLR8743TRPBF<\/td>Infineon<\/td>30V, 50A, 5.3m\u03a9, lower RDS(ON)<\/td><\/tr>
        IRFIZ24N<\/td>Infineon<\/td>55V, 14A, TO-220FP (through-hole)<\/td><\/tr>
        FDD86102<\/td>onsemi<\/td>60V, 50A, 12m\u03a9, DPAK<\/td><\/tr>
        STD60N3LH5<\/td>ST<\/td>30V, 60A, 8m\u03a9, DPAK<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7009","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=7009"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/7009\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=7009"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=7009"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=7009"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=7009"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}