{"id":6961,"date":"2026-06-22T03:17:00","date_gmt":"2026-06-22T03:17:00","guid":{"rendered":"https:\/\/materialparts.com\/fm24cl16b-g\/"},"modified":"2026-06-22T03:17:00","modified_gmt":"2026-06-22T03:17:00","slug":"fm24cl16b-g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fm24cl16b-g\/","title":{"rendered":"FM24CL16B-G"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The FM24CL16B-G from Infineon (formerly Cypress\/Ramtron) is a 16Kbit I2C F-RAM with 2Kx8 organization, 1MHz bus speed, 100 trillion write endurance, and SOIC-8 package.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>\u7c7b\u578b<\/td>\n<td>16Kbit Serial I2C F-RAM (Ferroelectric RAM)<\/td>\n<\/tr>\n<tr>\n<td>Density<\/td>\n<td>16 Kbit (2K x 8 bits)<\/td>\n<\/tr>\n<tr>\n<td>Organization<\/td>\n<td>2048 bytes x 8 bits<\/td>\n<\/tr>\n<tr>\n<td>Interface<\/td>\n<td>I2C (Standard 100kHz \/ Fast 400kHz \/ Fast+ 1MHz)<\/td>\n<\/tr>\n<tr>\n<td>\u7535\u6e90\u7535\u538b<\/td>\n<td>2.7V to 3.65V (CL = low voltage version)<\/td>\n<\/tr>\n<tr>\n<td>Active Current<\/td>\n<td>100 uA @ 100kHz; 300 uA @ 1MHz<\/td>\n<\/tr>\n<tr>\n<td>Standby Current<\/td>\n<td>3 uA (typical)<\/td>\n<\/tr>\n<tr>\n<td>Write Endurance<\/td>\n<td>100 trillion (10^14) read\/write cycles<\/td>\n<\/tr>\n<tr>\n<td>Data Retention<\/td>\n<td>151 years @ 65C<\/td>\n<\/tr>\n<tr>\n<td>Write Time<\/td>\n<td>NoDelay writes (immediate, no page buffer)<\/td>\n<\/tr>\n<tr>\n<td>WP (Write Protect)<\/td>\n<td>Yes (full array protection when HIGH)<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>SOIC-8 (150 mil)<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-40C to +85C<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>16Kbit F-RAM with 10^14 read\/write endurance<\/li>\n<li>NoDelay writes (no write cycle delay, no polling needed)<\/li>\n<li>151-year data retention at 65C<\/li>\n<li>1MHz I2C Fast-mode Plus support<\/li>\n<li>Hardware drop-in replacement for I2C EEPROM<\/li>\n<li>Low power: 100uA active at 100kHz<\/li>\n<li>Hardware write protect pin<\/li>\n<li>Unlimited sequential read\/write within address range<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Data logging with frequent writes<\/li>\n<li>Configuration storage with unlimited endurance<\/li>\n<li>Industrial control parameter storage<\/li>\n<li>EEPROM upgrade with zero write latency<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The FM24CL16B-G from Infineon (formerly Cypress\/Ramtron) is a 16Kbit I2C F-RAM with 2Kx8 organization, 1MHz bus speed, 100 trillion write endurance, and SOIC-8 package. Key Specifications Type 16Kbit Serial I2C F-RAM (Ferroelectric RAM) Density 16 Kbit (2K x 8 bits) Organization 2048 bytes x 8 bits Interface I2C (Standard 100kHz \/ Fast 400kHz [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-6961","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"16Kbit I2C F-RAM, 1MHz, 10^14 Endurance, SOIC-8","date_code":"","package_case":"SOIC-8 (4.9 x 3.9 x 1.5 mm, 1.27mm pitch)","in_stock":5000,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-FM24C16B_16Kbit_2K_x_8_Serial_I2C_F-RAM-DataSheet-v14_00-EN.pdf","price":"$0.85 @ 1ku","product_introduction":"The FM24CL16B-G from Infineon (formerly Cypress Semiconductor, originally Ramtron) is a 16Kbit (2K x 8) ferroelectric random access memory (F-RAM) with an I2C serial interface in an SOIC-8 package. The CL suffix indicates the 2.7V to 3.65V low-voltage version (compared to the 4.5-5.5V FM24C16B). The G suffix indicates RoHS-compliant lead-free packaging. F-RAM technology provides three critical advantages over conventional EEPROM: (1) NoDelay writes - data is written to the memory array immediately at bus speed with no write cycle delay, eliminating the need for acknowledge polling; (2) 100 trillion (10^14) write cycle endurance, which is essentially unlimited compared to EEPROM's typical 1 million cycles; and (3) much lower write power consumption because F-RAM does not require the high-voltage charge pump used by EEPROM for tunneling. The device supports I2C speeds up to 1MHz (Fast-mode Plus), four times faster than standard EEPROM's 400kHz maximum. The FM24CL16B is a hardware drop-in replacement for standard 24C16-type I2C EEPROMs, requiring no hardware changes for upgrade. The 151-year data retention at 65C exceeds EEPROM's typical 100-year specification.","working_principle":"The FM24CL16B-G uses ferroelectric random access memory (F-RAM) technology based on lead zirconate titanate (PZT) ferroelectric capacitors. Each memory cell consists of a selection transistor and a ferroelectric capacitor. The ferroelectric capacitor stores data as the polarization state of the PZT crystal: when an electric field is applied across the capacitor, the dipoles in the PZT crystal align in one of two stable directions (up or down), representing binary 0 or 1. This polarization remains stable without power, providing non-volatile data storage. Reading is destructive: a voltage pulse is applied and the resulting displacement current is compared with a reference to determine the stored state. After reading, the original data is immediately rewritten (restore cycle). Because the read and write access times are identical (both are simple voltage pulse operations), there is no write delay as with EEPROM's slow Fowler-Nordheim tunneling process. The NoDelay write feature means that as each byte is clocked in over I2C, the data is written to the F-RAM array before the acknowledge is sent back to the master - there is no separate write cycle waiting period. The 10^14 write endurance results from the fact that F-RAM polarization switching is a reversible, non-degrading process, unlike EEPROM tunneling which gradually damages the oxide. The I2C interface operates identically to standard EEPROM, using the same device address format (1010 + A2A1A0 + R\/W), byte addressing, and sequential read\/write protocols.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>A0<\/td><td>Input<\/td><td>Address bit 0 (connect to VCC or GND)<\/td><\/tr><tr><td>2<\/td><td>A1<\/td><td>Input<\/td><td>Address bit 1 (connect to VCC or GND)<\/td><\/tr><tr><td>3<\/td><td>A2<\/td><td>Input<\/td><td>Address bit 2 (connect to VCC or GND)<\/td><\/tr><tr><td>4<\/td><td>VSS<\/td><td>Power<\/td><td>Ground<\/td><\/tr><tr><td>5<\/td><td>SDA<\/td><td>I\/O<\/td><td>I2C serial data (open-drain)<\/td><\/tr><tr><td>6<\/td><td>SCL<\/td><td>Input<\/td><td>I2C serial clock<\/td><\/tr><tr><td>7<\/td><td>WP<\/td><td>Input<\/td><td>Write protect (HIGH=protect all)<\/td><\/tr><tr><td>8<\/td><td>VDD<\/td><td>Power<\/td><td>Supply voltage (2.7-3.65V)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Industrial data logger writing every 10 seconds with 10^14 endurance providing 31.7 million years of operation vs. 115 days for EEPROM<\/li><li>3.3V MCU configuration storage with NoDelay writes eliminating 5ms EEPROM write-cycle polling overhead<\/li><li>Motor controller calibration storage with 1MHz I2C Fast-mode Plus readback and unlimited write endurance for real-time parameter updates<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>FM24C16B-G<\/td><td>SOIC-8<\/td><td>5V version (4.5-5.5V)<\/td><\/tr><tr><td>Infineon<\/td><td>FM24CL04B-G<\/td><td>SOIC-8<\/td><td>4Kbit, smaller density<\/td><\/tr><tr><td>Infineon<\/td><td>FM24CL64B-G<\/td><td>SOIC-8<\/td><td>64Kbit, larger density<\/td><\/tr><tr><td>Fujitsu<\/td><td>MB85RC16PNF-G-JNERE1<\/td><td>SOIC-8<\/td><td>16Kbit F-RAM, equivalent<\/td><\/tr><tr><td>onsemi<\/td><td>CAT24C02TDI-GT3A<\/td><td>TSOT-23-5<\/td><td>2Kbit EEPROM, lower endurance<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6961","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6961"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6961\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6961"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6961"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6961"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6961"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}