The PMEG3020EP from Nexperia is a 30V 2A Schottky rectifier in a compact SOD-128 package with low 370mV forward voltage and high switching speed.<\/p>\n
| \u7c7b\u578b<\/td>\n | 30V 2A Schottky Barrier Rectifier<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| VR (Repetitive Peak Reverse Voltage)<\/td>\n | 30 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| IF (Average Forward Current)<\/td>\n | 2 A<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| IFSM (Surge Forward Current)<\/td>\n | 25 A (8.3ms, half sine)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| VF (Forward Voltage)<\/td>\n | 370 mV (typical) @ IF=2A; 500 mV (max) @ IF=2A<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| IR (Reverse Leakage)<\/td>\n | 100 uA (max) @ VR=30V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| Cd (Diode Capacitance)<\/td>\n | 90 pF (typical) @ VR=5V, f=1MHz<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| trr (Reverse Recovery Time)<\/td>\n | Very fast (Schottky, negligible reverse recovery)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| Maximum Junction Temperature<\/td>\n | 150 C<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | SOD-128 (2.6 x 1.7 x 1.0 mm)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -65C to +150C (TJ)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The PMEG3020EP from Nexperia is a 30V 2A Schottky rectifier in a compact SOD-128 package with low 370mV forward voltage and high switching speed. Key Specifications Type 30V 2A Schottky Barrier Rectifier VR (Repetitive Peak Reverse Voltage) 30 V IF (Average Forward Current) 2 A IFSM (Surge Forward Current) 25 A (8.3ms, half […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[140],"class_list":["post-6960","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-nexperia"],"acf":{"brief_explanation":"Schottky Rectifier, 30V, 2A, 370mV Vf, SOD-128","date_code":"","package_case":"SOD-128 (2.6 x 1.7 x 1.0 mm, 1.5mm pitch)","in_stock":45678,"datasheet":"https:\/\/www.nexperia.com\/product\/data-sheet\/PMEG3020EP.html","price":"$0.06 @ 1ku","product_introduction":"The PMEG3020EP from Nexperia is a 30V 2A Schottky barrier rectifier in a compact SOD-128 surface-mount package. The Schottky barrier construction uses a metal-semiconductor junction instead of a PN junction, providing significantly lower forward voltage drop (370mV typical at 2A) compared to silicon PN diodes (typically 700-1000mV). This lower forward voltage reduces conduction losses, improving efficiency in DC-DC converter output stages and reverse polarity protection circuits. The negligible reverse recovery time (essentially zero charge storage in the metal-semiconductor junction) eliminates switching losses associated with reverse recovery, making the PMEG3020EP ideal for high-frequency switching applications. The 30V reverse voltage rating is suitable for 5V and 3.3V DC-DC converter outputs, as well as 12V reverse polarity protection. The SOD-128 package provides a small footprint (2.6 x 1.7mm) with sufficient thermal performance for the 2A current rating through PCB copper heat spreading.","working_principle":"The PMEG3020EP uses a Schottky barrier junction formed by the contact between a metal (typically titanium-tungsten or chromium) and an N-type silicon semiconductor. Unlike a PN junction diode, which relies on minority carrier injection and diffusion, the Schottky junction operates on majority carrier conduction. When the metal is biased positively relative to the semiconductor (forward bias), electrons flow from the N-type silicon into the metal with minimal energy barrier, creating the low forward voltage drop (370mV typical). Because there is no minority carrier injection, there is essentially no stored charge to recover when the diode is reverse-biased, resulting in negligible reverse recovery time. This is in contrast to PN junction diodes where stored minority carriers must be swept out during turn-off, causing reverse recovery current and associated switching losses. The trade-off is higher reverse leakage current (100uA max at 30V) compared to PN diodes, because the lower barrier height that provides the low forward voltage also allows more thermionic emission of electrons in the reverse direction. The 30V reverse voltage rating is determined by the breakdown characteristics of the metal-silicon junction and the doping profile of the N-type epitaxial layer.","pin_description":"
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