{"id":6933,"date":"2026-06-22T02:13:23","date_gmt":"2026-06-22T02:13:23","guid":{"rendered":"https:\/\/materialparts.com\/mt25ql512abb1ew9-0sit\/"},"modified":"2026-06-22T02:13:23","modified_gmt":"2026-06-22T02:13:23","slug":"mt25ql512abb1ew9-0sit","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/mt25ql512abb1ew9-0sit\/","title":{"rendered":"MT25QL512ABB1EW9-0SIT"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The MT25QL512ABB1EW9-0SIT from Micron Technology is a 512Mbit (64MB) multi-I\/O NOR Flash with 133MHz SPI, 4KB\/32KB\/64KB erase, and BGA-24 package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\n512Mbit Multi-I\/O NOR Flash<\/td>\n<\/tr>\n
Density<\/td>\n512 Mbit (64 Mbyte)<\/td>\n<\/tr>\n
Organization<\/td>\n67,108,864 x 8 bits<\/td>\n<\/tr>\n
Interface<\/td>\nSPI \/ Dual SPI \/ Quad SPI<\/td>\n<\/tr>\n
Max Clock<\/td>\n133 MHz (SPI); 80 MHz (QPI)<\/td>\n<\/tr>\n
Max Data Rate<\/td>\n533 Mbps (Quad SPI at 133MHz, DDR)<\/td>\n<\/tr>\n
Erase Block Sizes<\/td>\n4 KB \/ 32 KB \/ 64 KB<\/td>\n<\/tr>\n
Page Size<\/td>\n256 bytes<\/td>\n<\/tr>\n
Program Time<\/td>\n0.3 ms (typical, 256-byte page)<\/td>\n<\/tr>\n
Erase Time<\/td>\n45 ms (64KB block, typical)<\/td>\n<\/tr>\n
\u7535\u6e90\u7535\u538b<\/td>\n1.7V to 2.0V (1.8V typical)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nBGA-24 (6 x 8 x 1.0 mm, 0.8mm pitch)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-40C to +85C (SIT suffix)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 512Mbit (64MB) density in BGA-24<\/li>\n
  • Single\/Dual\/Quad SPI interface<\/li>\n
  • 133 MHz clock with Quad I\/O (DDR) for 533Mbps throughput<\/li>\n
  • 4KB\/32KB\/64KB uniform erase block sizes<\/li>\n
  • 1.8V low-power operation<\/li>\n
  • Deep power-down mode: 5 uA typical<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • FPGA configuration storage<\/li>\n
    • Embedded Linux root file system<\/li>\n
    • Boot code storage for high-end MCUs<\/li>\n
    • Data logging and firmware updates<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The MT25QL512ABB1EW9-0SIT from Micron Technology is a 512Mbit (64MB) multi-I\/O NOR Flash with 133MHz SPI, 4KB\/32KB\/64KB erase, and BGA-24 package. Key Specifications Type 512Mbit Multi-I\/O NOR Flash Density 512 Mbit (64 Mbyte) Organization 67,108,864 x 8 bits Interface SPI \/ Dual SPI \/ Quad SPI Max Clock 133 MHz (SPI); 80 MHz (QPI) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[3],"class_list":["post-6933","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-micron"],"acf":{"brief_explanation":"512Mbit NOR Flash, QSPI 133MHz, 1.8V, BGA-24","date_code":"","package_case":"BGA-24 (6.0 x 8.0 x 1.0 mm, 0.8mm pitch)","in_stock":3456,"datasheet":"https:\/\/www.micron.com\/~\/media\/documents\/products\/data-sheet\/nor-flash\/serial-nor\/mt25q\/die-rev-b\/mt25q_qlkt_l_512_abb_0.pdf","price":"$3.50 @ 1ku","product_introduction":"The MT25QL512ABB1EW9-0SIT from Micron Technology is a 512Mbit (64 Mbyte) multi-I\/O NOR Flash memory in a BGA-24 package. The device supports standard SPI, Dual SPI, and Quad SPI interfaces, with data rates up to 533 Mbps in Quad SPI DDR mode at 133 MHz clock. The 64MB density provides ample storage for FPGA bitstreams, boot code, and embedded file systems. The uniform 4KB\/32KB\/64KB erase block sizes optimize flexibility for wear-leveling algorithms in firmware-over-the-air (FOTA) update scenarios. The 1.8V supply voltage reduces power consumption compared to 3.3V Flash devices. The deep power-down mode draws only 5 uA, making it suitable for always-connected IoT devices. The BGA-24 package provides a compact footprint with reliable solder joint reliability for automotive and industrial applications.","working_principle":"The MT25QL512ABB1EW9-0SIT stores data in a NOR-type Flash memory array using floating-gate MOSFET cells. Each cell stores one bit by trapping charge on a floating gate that modifies the transistor's threshold voltage. During programming, a high voltage (approximately 16V) is applied to the control gate while the source is grounded, causing hot-electron injection from the channel into the floating gate (CHE programming). During erasure, a high voltage is applied to the source while the control gate is grounded, causing Fowler-Nordheim tunneling that removes charge from the floating gate. The SPI interface provides serial command access: the master sends an 8-bit opcode, followed by 24-bit address and optional dummy cycles, then reads or writes data. In Quad SPI mode, data is transferred 4 bits per clock cycle, achieving 4x throughput. In DDR (Double Data Rate) mode, data is transferred on both rising and falling clock edges, doubling throughput again to 8x the base clock rate. The uniform block architecture allows fine-grained erase management for wear leveling.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      A1<\/td>SCK<\/td>Input<\/td>Serial clock<\/td><\/tr>
      A2<\/td>CS#<\/td>Input<\/td>Chip select (active LOW)<\/td><\/tr>
      B1<\/td>SI\/IO0<\/td>I\/O<\/td>SPI data in \/ QSPI IO0<\/td><\/tr>
      B2<\/td>SO\/IO1<\/td>I\/O<\/td>SPI data out \/ QSPI IO1<\/td><\/tr>
      C1<\/td>WP#\/IO2<\/td>I\/O<\/td>Write protect \/ QSPI IO2<\/td><\/tr>
      C2<\/td>HOLD#\/IO3<\/td>I\/O<\/td>Hold \/ QSPI IO3<\/td><\/tr>
      D1<\/td>VCC<\/td>Power<\/td>1.8V supply<\/td><\/tr>
      D2<\/td>VSS<\/td>Power<\/td>Ground<\/td><\/tr><\/table>","application_scenarios":"
      • Xilinx Ultrascale+ FPGA configuration storage with 64MB QSPI at 133MHz<\/li>
      • Embedded Linux root file system on ARM Cortex-A with 533Mbps QSPI DDR<\/li>
      • Automotive ECU firmware storage with 4KB sectors for wear-leveling FOTA updates<\/li>
      • Industrial IoT gateway boot code with 5uA deep power-down for battery backup<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Micron<\/td>MT25QU512ABB1EW9-0SIT<\/td>BGA-24<\/td>3.3V version<\/td><\/tr>
        Micron<\/td>MT25QL256ABB1EW9-0SIT<\/td>BGA-24<\/td>256Mbit, half density<\/td><\/tr>
        Infineon<\/td>S25FL512SAGMFI010<\/td>BGA-24<\/td>512Mbit, similar class<\/td><\/tr>
        Macronix<\/td>MX66L1G45GMI-08G<\/td>BGA-24<\/td>1Gbit, higher density<\/td><\/tr>
        Winbond<\/td>W25Q512JVFIQ<\/td>BGA-24<\/td>512Mbit, alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6933","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6933"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6933\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6933"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6933"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6933"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6933"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}