The 2STR1215 from STMicroelectronics is an NPN power transistor in a SOT-32 (TO-126) package, rated at -60V and -2A for general-purpose amplification and switching.<\/p>\n
| \u7c7b\u578b<\/td>\n | NPN Power Transistor<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| VCEO<\/td>\n | -60 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u96c6\u6210\u7535\u8def<\/td>\n | -2 A<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| PD (TC=25C)<\/td>\n | 10 W<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| hFE<\/td>\n | 40 ~ 250 @ IC=-150mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| VCE(sat)<\/td>\n | -0.4 V (max) @ IC=-500mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| fT<\/td>\n | 120 MHz (typical)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | SOT-32 \/ TO-126<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -65C to +150C (TJ)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The 2STR1215 from STMicroelectronics is an NPN power transistor in a SOT-32 (TO-126) package, rated at -60V and -2A for general-purpose amplification and switching. Key Specifications Type NPN Power Transistor VCEO -60 V IC -2 A PD (TC=25C) 10 W hFE 40 ~ 250 @ IC=-150mA VCE(sat) -0.4 V (max) @ IC=-500mA fT […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[142],"class_list":["post-6879","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-st"],"acf":{"brief_explanation":"NPN Power Transistor, -60V -2A, SOT-32\/TO-126","date_code":"","package_case":"SOT-32 \/ TO-126 (7.3 x 5.5 x 3.5 mm)","in_stock":8901,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/2str1215.pdf","price":"$0.22 @ 1ku","product_introduction":"The 2STR1215 from STMicroelectronics is an NPN power transistor in a SOT-32 (TO-126) through-hole package, rated at -60V VCEO and -2A collector current. The device is designed for general-purpose amplification and switching applications in audio circuits, voltage regulators, and driver stages. The 10W power dissipation at TC=25C with the SOT-32 package provides moderate power handling with the heat-sink tab. The complementary PNP device (2STR2215) enables push-pull and bridge configurations. The 120 MHz transition frequency supports medium-frequency amplification. The device is manufactured using planar epitaxial technology for reliable operation.","working_principle":"The 2STR1215 is a vertical NPN bipolar junction transistor manufactured using a planar epitaxial process. The N-type epitaxial layer forms the collector region, while the P-type base and N+ emitter are diffused into the epitaxial surface. Current flows vertically from emitter (top surface) through the base and collector to the collector tab (rear of package). When forward base current (IB) is applied, minority carriers (holes) are injected from the base into the emitter, modulating the emitter-base junction. The collector current (IC) is amplified by the DC current gain hFE, which ranges from 40 to 250 depending on the operating point. The SOT-32 package has a metal tab on the rear that serves as both the collector terminal and the primary heat conduction path to an external heatsink. The 120 MHz fT is the frequency at which hFE drops to unity, defining the useful bandwidth.","pin_description":"
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