The MMBT3906LT1G from onsemi is a 40V, 200mA PNP general-purpose transistor in a SOT-23 surface mount package, the SMD equivalent of the 2N3906.<\/p>\n
| \u7c7b\u578b<\/td>\n | PNP General-Purpose Transistor<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| VCEO<\/td>\n | -40 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u96c6\u6210\u7535\u8def<\/td>\n | -200 mA (continuous)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| hFE (min)<\/td>\n | 100 @ IC=-10mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| VCE(sat)<\/td>\n | -0.25 V (max) @ IC=-10mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| fT<\/td>\n | 250 MHz (typical)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u529f\u7387\u8017\u6563<\/td>\n | 225 mW<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | SOT-23-3<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -55C to +150C (TJ)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The MMBT3906LT1G from onsemi is a 40V, 200mA PNP general-purpose transistor in a SOT-23 surface mount package, the SMD equivalent of the 2N3906. Key Specifications Type PNP General-Purpose Transistor VCEO -40 V IC -200 mA (continuous) hFE (min) 100 @ IC=-10mA VCE(sat) -0.25 V (max) @ IC=-10mA fT 250 MHz (typical) Power Dissipation […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[144],"class_list":["post-6856","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"PNP GP Transistor, -40V -200mA, SOT-23, 2N3906 SMD Equivalent","date_code":"","package_case":"SOT-23-3 (2.9 x 1.3 x 1.0 mm)","in_stock":67890,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/MMBT3906LT1-D.PDF","price":"$0.02 @ 1ku","product_introduction":"The MMBT3906LT1G from onsemi is a PNP general-purpose bipolar junction transistor in a SOT-23-3 surface mount package. It is the SMD equivalent of the industry-standard through-hole 2N3906 and the PNP complement to the MMBT3904 NPN transistor. The 40V VCEO and 200mA IC ratings cover a wide range of low-power switching and amplification applications. The 250 MHz transition frequency supports RF and high-frequency signal processing. The 100 minimum hFE at 10mA collector current provides adequate gain for most small-signal circuits. The T1G suffix indicates tape and reel packaging with onsemi's lead-free (Pb-free) finish. AEC-Q101 qualified versions are available for automotive applications. The device is one of the most widely used and cost-effective PNP transistors in the electronics industry.","working_principle":"The MMBT3906LT1G is a planar epitaxial PNP bipolar junction transistor. In a PNP transistor, current flows from the emitter (P-type) through the base (N-type) to the collector (P-type) when the base-emitter junction is forward-biased (VBE negative relative to emitter). Holes are the majority carriers in the emitter, injected into the thin base region where a small fraction recombine with electrons (base current), while the majority diffuse across the base to the collector. The collector current is proportional to the base current with the DC current gain hFE typically 100-300. The 250 MHz transition frequency (fT) is the frequency at which the common-emitter current gain drops to unity, determining the useful bandwidth for amplifier applications. The SOT-23 package provides a junction-to-ambient thermal resistance of approximately 556 K\/W, limiting continuous power dissipation to 225 mW at 25C ambient temperature.","pin_description":"
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