{"id":6832,"date":"2026-06-21T12:49:09","date_gmt":"2026-06-21T12:49:09","guid":{"rendered":"https:\/\/materialparts.com\/ipd60r385cp\/"},"modified":"2026-06-21T12:49:09","modified_gmt":"2026-06-21T12:49:09","slug":"ipd60r385cp","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ipd60r385cp\/","title":{"rendered":"IPD60R385CP"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IPD60R385CP from Infineon Technologies is a 600V, 3.85 Ohm CoolMOS N-channel enhancement mode power MOSFET in a DPAK package for high-efficiency switching applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\n600V CoolMOS N-Channel Power MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n600 V<\/td>\n<\/tr>\n
RDS(on) (max)<\/td>\n3.85 Ohm @ VGS=10V<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1<\/td>\n3.3 A @ TC=25C<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n8.6 nC (typical)<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n310 pF (typical)<\/td>\n<\/tr>\n
Switching Energy (Eoff)<\/td>\n30 uJ (typical)<\/td>\n<\/tr>\n
VGS(th)<\/td>\n3.0 V (typical)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDPAK (TO-252)<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55C to +150C (TJ)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Superjunction CoolMOS technology for low RDS(on) x area<\/li>\n
  • 3.85 Ohm RDS(on) at 600V rating<\/li>\n
  • Low 8.6 nC gate charge for fast switching<\/li>\n
  • Low switching energy (Eoff = 30 uJ)<\/li>\n
  • 100% avalanche tested<\/li>\n
  • DPAK surface mount package<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Switch-mode power supply (SMPS) primary switch<\/li>\n
    • PFC boost converter<\/li>\n
    • LED lighting offline driver<\/li>\n
    • Motor drive inverter<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IPD60R385CP from Infineon Technologies is a 600V, 3.85 Ohm CoolMOS N-channel enhancement mode power MOSFET in a DPAK package for high-efficiency switching applications. Key Specifications Type 600V CoolMOS N-Channel Power MOSFET VDS 600 V RDS(on) (max) 3.85 Ohm @ VGS=10V ID 3.3 A @ TC=25C Gate Charge (Qg) 8.6 nC (typical) Input […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-6832","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"600V CoolMOS N-CH MOSFET, 3.85Ohm, 3.3A, DPAK, Superjunction","date_code":"","package_case":"DPAK \/ TO-252-3 (6.5 x 5.5 x 2.3 mm)","in_stock":12345,"datasheet":"https:\/\/www.infineon.com\/dgdl\/IPD60R385CP_Rev2.4.pdf","price":"$0.65 @ 1ku","product_introduction":"The IPD60R385CP from Infineon Technologies is a 600V N-channel CoolMOS superjunction power MOSFET with 3.85 Ohm on-resistance in a DPAK surface mount package. The superjunction technology uses alternating N and P columns in the drift region to achieve the low specific on-resistance (RDS(on) x Area) that is impossible with conventional planar MOSFET structures. The 8.6 nC gate charge and 30 uJ turn-off energy enable efficient high-frequency switching in offline power supplies. The device is 100% avalanche tested for ruggedness in unclamped inductive switching applications. The DPAK package provides good thermal performance with a junction-to-ambient thermal resistance of approximately 62 K\/W on a standard PCB footprint.","working_principle":"The IPD60R385CP uses Infineon's CoolMOS superjunction technology, which arranges alternating N-type and P-type columns in the drift region instead of the uniform N-type drift layer used in conventional MOSFETs. During the blocking state, the P-columns deplete the N-columns laterally, creating a high electric field that supports the 600V rating with a much thinner drift region than conventional designs. This thinner drift region has lower resistance, resulting in the 3.85 Ohm RDS(on) despite the 600V rating. During conduction, applying VGS > VGS(th) creates an inversion layer (channel) connecting the N+ source to the N-drift region, allowing current flow. The RDS(on) of 3.85 Ohm represents the sum of channel resistance, accumulation layer resistance, and drift region resistance. The low 8.6 nC gate charge is achieved through a fine-pitch cell structure that minimizes the gate-drain overlap capacitance (Miller capacitance), enabling fast switching and reducing switching losses. The body diode (parasitic P-N junction between P-body and N-drift) can conduct reverse current but has a relatively slow reverse recovery, making this device less suitable for hard-switched half-bridge applications.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate<\/td><\/tr>
      2<\/td>Drain (tab)<\/td>I\/O<\/td>MOSFET drain (connected to heat slug)<\/td><\/tr>
      3<\/td>Source<\/td>I\/O<\/td>MOSFET source<\/td><\/tr><\/table>","application_scenarios":"
      • 85-265VAC offline flyback converter primary switch at 65kHz<\/li>
      • PFC boost converter switch in 200W adapter power supply<\/li>
      • Isolated LED driver primary switch with low switching losses<\/li>
      • Motor inverter leg with IGBT replacement for <5kHz switching<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IPD60R280P6S<\/td>DPAK<\/td>2.8 Ohm, 600V, lower RDS(on)<\/td><\/tr>
        Infineon<\/td>IPD60R600P7S<\/td>DPAK<\/td>6 Ohm, 600V, higher RDS(on), lower cost<\/td><\/tr>
        ST<\/td>STF10NM60N<\/td>DPAK<\/td>600V, 0.65 Ohm, higher current<\/td><\/tr>
        onsemi<\/td>FCD860N60Z<\/td>DPAK<\/td>600V, 0.98 Ohm, similar class<\/td><\/tr>
        Infineon<\/td>IPA60R385CP<\/td>TO-220<\/td>Same die, through-hole package<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6832","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6832"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6832\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6832"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6832"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6832"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6832"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}