{"id":6781,"date":"2026-06-21T10:48:09","date_gmt":"2026-06-21T10:48:09","guid":{"rendered":"https:\/\/materialparts.com\/aon5820\/"},"modified":"2026-06-21T10:48:09","modified_gmt":"2026-06-21T10:48:09","slug":"aon5820","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/aon5820\/","title":{"rendered":"AON5820"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The AON5820 from Alpha and Omega Semiconductor is a 30 V, P-channel enhancement mode MOSFET with 21 mOhm RDS(on) at VGS=-10V in a DFN 3×3-8L package, optimized for load switching and battery management.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nP-Channel Enhancement Mode MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n-30 V<\/td>\n<\/tr>\n
RDS(on)<\/td>\n21 mOhm (max) @ VGS=-10V<\/td>\n<\/tr>\n
ID (Drain Current)<\/td>\n-15 A @ TC=25C<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-1.0 V to -2.5 V<\/td>\n<\/tr>\n
Total Gate Charge (Qg)<\/td>\n28 nC (typical)<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n29 W @ TC=25C<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDFN 3×3-8L<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55C to 150C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 21 mOhm low RDS(on) for minimal conduction loss<\/li>\n
  • 30 V drain-source voltage rating<\/li>\n
  • Compact DFN 3×3-8L footprint<\/li>\n
  • Low gate charge (28 nC) for fast switching<\/li>\n
  • 100% UIS tested for ruggedness<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Battery disconnect and load switches<\/li>\n
    • Power management and battery protection<\/li>\n
    • DC-DC converter high-side P-FET<\/li>\n
    • Portable device power path control<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The AON5820 from Alpha and Omega Semiconductor is a 30 V, P-channel enhancement mode MOSFET with 21 mOhm RDS(on) at VGS=-10V in a DFN 3×3-8L package, optimized for load switching and battery management. Key Specifications Type P-Channel Enhancement Mode MOSFET VDS -30 V RDS(on) 21 mOhm (max) @ VGS=-10V ID (Drain Current) -15 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[197],"class_list":["post-6781","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-aos"],"acf":{"brief_explanation":"30V P-Ch MOSFET, 21mOhm, -15A, DFN 3x3-8L, Load Switch","date_code":"","package_case":"DFN 3x3-8L (3.0 x 3.0 x 0.75 mm, exposed pad)","in_stock":7654,"datasheet":"http:\/\/www.aosmd.com\/res\/data_sheets\/AON5820.pdf","price":"$0.38 @ 1ku","product_introduction":"The AON5820 from Alpha and Omega Semiconductor is a 30 V P-channel enhancement mode MOSFET in a compact DFN 3x3-8L package. With 21 mOhm maximum RDS(on) at VGS=-10V, the device minimizes conduction losses in high-side load switching applications. The -15 A drain current rating and 29 W power dissipation capability support demanding battery management and power path control functions. The 28 nC total gate charge enables efficient switching at moderate frequencies. The DFN 3x3-8L package with exposed pad provides excellent thermal performance in a minimal footprint.","working_principle":"The AON5820 is a P-channel enhancement mode MOSFET. When the gate-source voltage (VGS) is more negative than the threshold voltage (VGS(th), -1.0V to -2.5V), an inversion layer forms in the P-body region under the gate oxide, creating a conduction channel between the source and drain. Current flows from source to drain when the drain is at a lower potential than the source. The RDS(on) of 21 mOhm at VGS=-10V is achieved through advanced trench technology with high cell density. In the off-state (VGS close to 0V), no inversion layer forms and the device blocks current up to the 30 V VDS rating. The body diode (inherent P-N junction between body and drain) conducts when the drain is forward-biased relative to the source, providing a natural freewheeling path.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>
      2<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>
      4<\/td>Drain<\/td>Power<\/td>Drain terminal<\/td><\/tr>
      5<\/td>Drain<\/td>Power<\/td>Drain terminal<\/td><\/tr>
      6<\/td>Drain<\/td>Power<\/td>Drain terminal<\/td><\/tr>
      7<\/td>Drain<\/td>Power<\/td>Drain terminal<\/td><\/tr>
      8<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>
      Pad<\/td>Drain<\/td>Power<\/td>Exposed thermal pad (drain)<\/td><\/tr><\/table>","application_scenarios":"
      • Laptop and tablet battery disconnect load switch<\/li>
      • Smartphone power management high-side switch<\/li>
      • Battery protection circuit power path control<\/li>
      • DC-DC converter synchronous P-channel high-side<\/li>
      • USB power delivery port power routing switch<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        AOS<\/td>AON7403<\/td>DFN 3x3-8L<\/td>Older generation, higher RDS(on)<\/td><\/tr>
        Infineon<\/td>BSB008NE2LX3<\/td>PQFN-8<\/td>30V P-ch, 9mOhm, higher current<\/td><\/tr>
        Vishay<\/td>SI4465DY-T1-GE3<\/td>SOIC-8<\/td>30V P-ch, 22mOhm, leaded<\/td><\/tr>
        onsemi<\/td>NTR4101PT1G<\/td>SOT-23-6<\/td>30V P-ch, 58mOhm, smaller<\/td><\/tr>
        Texas Instruments<\/td>CSD25213W<\/td>SON-8<\/td>30V P-ch, 15mOhm, power block<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6781","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6781"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6781\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6781"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6781"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6781"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6781"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}