{"id":6772,"date":"2026-06-21T10:28:32","date_gmt":"2026-06-21T10:28:32","guid":{"rendered":"https:\/\/materialparts.com\/ngtb40n120fl3wg\/"},"modified":"2026-06-21T10:28:32","modified_gmt":"2026-06-21T10:28:32","slug":"ngtb40n120fl3wg","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ngtb40n120fl3wg\/","title":{"rendered":"NGTB40N120FL3WG"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The NGTB40N120FL3WG from onsemi is a 40 A, 1200 V N-channel IGBT with Trench Stop technology, offering low conduction loss and fast switching in a TO-247-3L package for high-power switching applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-Channel IGBT (Trench Stop)<\/td>\n<\/tr>\n
VCE(sat)<\/td>\n1200 V<\/td>\n<\/tr>\n
IC\uff08\u96c6\u7535\u6781\u7535\u6d41\uff09<\/td>\n40 A @ TC=25\u00b0C<\/td>\n<\/tr>\n
VCE(sat) (Saturation Voltage)<\/td>\n1.7 V (typical) @ IC=40A<\/td>\n<\/tr>\n
Eoff (Turn-off Energy)<\/td>\n2.3 mJ (typical)<\/td>\n<\/tr>\n
VGE(th) (Gate Threshold)<\/td>\n5.2 V to 6.5 V<\/td>\n<\/tr>\n
\u5f00\u5173\u9891\u7387<\/td>\nUp to 40 kHz<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-247-3L<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to 175\u00b0C (junction)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 1200 V blocking voltage with Trench Stop technology<\/li>\n
  • Low 1.7 V typical saturation voltage<\/li>\n
  • 40 A continuous collector current<\/li>\n
  • Fast switching with 2.3 mJ turn-off energy<\/li>\n
  • Positive temperature coefficient for easy paralleling<\/li>\n
  • Short circuit withstand capability (10 us)<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Motor drives and inverters<\/li>\n
    • Solar inverter power stages<\/li>\n
    • UPS systems and welding equipment<\/li>\n
    • Induction heating and PFC circuits<\/li>\n
    • Industrial power conversion<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The NGTB40N120FL3WG from onsemi is a 40 A, 1200 V N-channel IGBT with Trench Stop technology, offering low conduction loss and fast switching in a TO-247-3L package for high-power switching applications. Key Specifications Type N-Channel IGBT (Trench Stop) VCE(sat) 1200 V IC (Collector Current) 40 A @ TC=25\u00b0C VCE(sat) (Saturation Voltage) 1.7 V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-6772","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"40A 1200V Trench Stop IGBT, 1.7V VCE(sat), Fast Switch, TO-247-3L","date_code":"","package_case":"TO-247-3L (21.0 x 16.0 x 4.9 mm)","in_stock":3289,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/ngtb40n120fl3w-d.pdf","price":"$5.60 @ 1ku","product_introduction":"The NGTB40N120FL3WG from onsemi is a 40 A, 1200 V N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench Stop technology. This technology combines a trench gate structure with a field stop layer to achieve both low conduction loss (VCE(sat) = 1.7 V typical at 40 A) and fast switching performance (Eoff = 2.3 mJ typical). The device features 10 us short circuit withstand capability and positive temperature coefficient for easy paralleling. The TO-247-3L package provides excellent thermal performance for high-power applications.","working_principle":"The NGTB40N120FL3WG combines MOSFET gate drive characteristics with bipolar current conduction. When a positive gate-emitter voltage (VGE > VGE(th)) is applied, the MOS channel under the trench gate opens, allowing electron current to flow from emitter to the drift region. This electron flow modulates the conductivity of the drift region (conductivity modulation), drastically reducing resistance and allowing large collector current with low saturation voltage. The Trench Stop technology uses a vertical trench gate for high channel density and a field stop layer at the back of the wafer to reduce the n-drift region thickness, lowering both VCE(sat) and switching losses. When VGE is removed, the MOS channel closes and the stored minority carriers in the drift region recombine, resulting in the characteristic current tail during turn-off. The field stop layer speeds up this recombination process, reducing tail current and turn-off energy.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      2<\/td>Collector<\/td>Power<\/td>Collector terminal (tab)<\/td><\/tr>
      3<\/td>Emitter<\/td>Power<\/td>Emitter terminal<\/td><\/tr><\/table>","application_scenarios":"
      • AC motor drive inverter legs at 1200V DC bus<\/li>
      • Solar string inverter power switching stage<\/li>
      • UPS inverter bridge switching at 10-40 kHz<\/li>
      • Induction cooking and heating power stages<\/li>
      • Active PFC boost converter for high-power supplies<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>NGTB40N120IHLWG<\/td>TO-247-3L<\/td>Higher speed variant<\/td><\/tr>
        Infineon<\/td>IKW40N120T2<\/td>TO-247-3<\/td>40A 1200V TrenchStop IGBT<\/td><\/tr>
        STMicroelectronics<\/td>STGW40NC120KD<\/td>TO-247-3<\/td>40A 1200V MDmesh IGBT<\/td><\/tr>
        Mitsubishi<\/td>CM40DU-24NFH<\/td>MODULE<\/td>Dual IGBT module, 1200V<\/td><\/tr>
        onsemi<\/td>FGA40N120ANTD<\/td>TO-247-3<\/td>40A 1200V, higher VCEsat<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6772","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6772"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6772\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6772"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6772"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6772"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6772"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}