{"id":6747,"date":"2026-06-21T10:13:17","date_gmt":"2026-06-21T10:13:17","guid":{"rendered":"https:\/\/materialparts.com\/ipw60r190c6\/"},"modified":"2026-06-21T10:13:17","modified_gmt":"2026-06-21T10:13:17","slug":"ipw60r190c6","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/ipw60r190c6\/","title":{"rendered":"IPW60R190C6"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The IPW60R190C6 from Infineon Technologies is a 600 V CoolMOS N-channel superjunction power MOSFET with 190 mOhm on-resistance in a TO-247 package. It features Infineon’s 6th generation CoolMOS technology offering improved RDS(on) x area figure of merit, excellent switching performance, and high ruggedness for hard-switching and resonant topologies.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-Channel CoolMOS Superjunction MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n600 V<\/td>\n<\/tr>\n
VGS<\/td>\n\u00b120 V<\/td>\n<\/tr>\n
RDS(on) (VGS=10V)<\/td>\n190 mOhm (max)<\/td>\n<\/tr>\n
Continuous Drain Current (TC=25\u00b0C)<\/td>\n20.7 A<\/td>\n<\/tr>\n
Gate Threshold Voltage<\/td>\n3.0-5.0 V<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n47 nC (typical)<\/td>\n<\/tr>\n
Effective Output Charge<\/td>\n6.7 nC<\/td>\n<\/tr>\n
Energy Spec (Eoss)<\/td>\n8 \u00b5J (typical at 400V)<\/td>\n<\/tr>\n
Power Dissipation (TC=25\u00b0C)<\/td>\n250 W<\/td>\n<\/tr>\n
dv\/dt Robustness<\/td>\n50 V\/ns<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-247<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to 150\u00b0C<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 6th generation CoolMOS superjunction technology<\/li>\n
  • 190 mOhm RDS(on) with low gate charge (47 nC)<\/li>\n
  • Excellent RDS(on) x area figure of merit<\/li>\n
  • Very low effective output charge (Eoss)<\/li>\n
  • High dv\/dt ruggedness: 50 V\/ns<\/li>\n
  • Qualified for industrial applications<\/li>\n
  • Optimized for hard-switching and resonant topologies<\/li>\n
  • Zener diode integrated for ESD gate protection<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Switch-mode power supplies (SMPS) primary side<\/li>\n
    • Power factor correction (PFC) stages<\/li>\n
    • LLC and phase-shifted full-bridge converters<\/li>\n
    • Solar inverters and motor drives<\/li>\n
    • UPS systems and EV charging stations<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IPW60R190C6 from Infineon Technologies is a 600 V CoolMOS N-channel superjunction power MOSFET with 190 mOhm on-resistance in a TO-247 package. It features Infineon’s 6th generation CoolMOS technology offering improved RDS(on) x area figure of merit, excellent switching performance, and high ruggedness for hard-switching and resonant topologies. Key Specifications Type N-Channel CoolMOS […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-6747","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"600V CoolMOS N-Channel MOSFET, 190mOhm, 20.7A, TO-247, 6th Gen","date_code":"","package_case":"TO-247 (20.8 x 15.8 x 5.4 mm)","in_stock":7823,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IPW60R190C6-DS-v02_03-EN.pdf?fileId=db3a30433d68b2e6013da27a47087435","price":"$3.85 @ 1ku","product_introduction":"The IPW60R190C6 from Infineon Technologies is a 600 V N-channel CoolMOS superjunction power MOSFET built on 6th generation CoolMOS technology. It offers 190 mOhm on-resistance with 47 nC total gate charge, resulting in an excellent RDS(on) x Qg figure of merit for high-efficiency switching applications. The superjunction structure enables much lower on-resistance per area compared to conventional planar MOSFETs while maintaining low gate charge. The device features very low effective output charge (Eoss = 6.7 nC) and stored energy (Eoss = 8 \u00b5J at 400V), making it particularly suitable for resonant topologies where these parameters dominate switching losses. It provides high dv\/dt ruggedness of 50 V\/ns and integrates a Zener diode for gate ESD protection.","working_principle":"The IPW60R190C6 uses Infineon's 6th generation CoolMOS superjunction technology where alternating p-type and n-type columns are formed in the drift region using deep trench and epitaxial refill processes. This structure allows the drift region to be heavily doped while maintaining high breakdown voltage, resulting in dramatically lower on-resistance compared to conventional planar MOSFETs. When VGS exceeds the threshold (3.0-5.0V), the inversion channel forms and current flows from drain to source through the n-type columns. During switching, the stored charge in the p-n junctions between columns must be removed, but the superjunction structure minimizes this charge compared to planar devices. The low Eoss and Qoss values reduce losses in ZVS applications like LLC and phase-shifted full-bridge converters.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (control terminal)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain<\/td><\/tr>
      3<\/td>Source<\/td>Reference<\/td>MOSFET source<\/td><\/tr>
      Tab<\/td>Drain<\/td>Output<\/td>Drain connection (heatsink mount)<\/td><\/tr><\/table>","application_scenarios":"
      • SMPS primary-side switching in server and telecom power<\/li>
      • Continuous conduction mode (CCM) PFC boost converters<\/li>
      • LLC half-bridge and full-bridge resonant converters<\/li>
      • Solar micro-inverter and string inverter power stages<\/li>
      • EV on-board charger DC-DC conversion stages<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IPW60R180P7<\/td>TO-247<\/td>7th gen CoolMOS, 180 mOhm<\/td><\/tr>
        Infineon<\/td>IPW60R099CPA<\/td>TO-247<\/td>99 mOhm, higher current<\/td><\/tr>
        STMicroelectronics<\/td>STW39NM60ND<\/td>TO-247<\/td>600V MDmesh, 390 mOhm<\/td><\/tr>
        onsemi<\/td>FCH190N60F<\/td>TO-247<\/td>600V SuperFET II, 190 mOhm<\/td><\/tr>
        Vishay<\/td>IRFP4668PBF<\/td>TO-247<\/td>600V, 90 mOhm, higher current<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6747","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6747"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6747\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6747"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6747"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6747"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6747"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}