{"id":6736,"date":"2026-06-21T10:05:01","date_gmt":"2026-06-21T10:05:01","guid":{"rendered":"https:\/\/materialparts.com\/aon7403\/"},"modified":"2026-06-21T10:05:01","modified_gmt":"2026-06-21T10:05:01","slug":"aon7403","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/aon7403\/","title":{"rendered":"AON7403"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The AON7403 from Alpha &#038; Omega Semiconductor is a 30 V P-channel enhancement-mode MOSFET in a compact DFN 3&#215;3-8L package. It features 18 mOhm on-resistance at VGS=-10V and -29 A drain current, making it suitable for load switching and PWM applications requiring low conduction losses in a small footprint.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>\u7c7b\u578b<\/td>\n<td>P-Channel Enhancement Mode MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS<\/td>\n<td>-30 V<\/td>\n<\/tr>\n<tr>\n<td>VGS<\/td>\n<td>\u00b125 V<\/td>\n<\/tr>\n<tr>\n<td>Drain Current (TC=25\u00b0C)<\/td>\n<td>-29 A<\/td>\n<\/tr>\n<tr>\n<td>Drain Current (TA=25\u00b0C)<\/td>\n<td>-8 A<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) (VGS=-10V)<\/td>\n<td>18 mOhm (max)<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) (VGS=-5V)<\/td>\n<td>36 mOhm (max)<\/td>\n<\/tr>\n<tr>\n<td>Gate Threshold Voltage<\/td>\n<td>-1.7 to -3.0 V<\/td>\n<\/tr>\n<tr>\n<td>Total Gate Charge<\/td>\n<td>24 nC (max)<\/td>\n<\/tr>\n<tr>\n<td>Power Dissipation (TC=25\u00b0C)<\/td>\n<td>25 W<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>DFN 3&#215;3-8L with exposed pad<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-55\u00b0C to 150\u00b0C<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>Advanced trench technology for low RDS(on)<\/li>\n<li>Ultra-low gate charge (18 nC typical)<\/li>\n<li>25 V gate rating for robust operation<\/li>\n<li>100% UIS (Unclamped Inductive Switching) tested<\/li>\n<li>Compact DFN 3&#215;3 package for space-constrained designs<\/li>\n<li>RoHS compliant<\/li>\n<li>Suitable for load switch and PWM applications<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Battery management and protection circuits<\/li>\n<li>Load switching in portable electronics<\/li>\n<li>Power management in notebooks and tablets<\/li>\n<li>Motor driver circuits (H-bridge high-side)<\/li>\n<li>DC-DC converter synchronous rectification<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The AON7403 from Alpha &#038; Omega Semiconductor is a 30 V P-channel enhancement-mode MOSFET in a compact DFN 3&#215;3-8L package. It features 18 mOhm on-resistance at VGS=-10V and -29 A drain current, making it suitable for load switching and PWM applications requiring low conduction losses in a small footprint. Key Specifications Type P-Channel [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[197],"class_list":["post-6736","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-aos"],"acf":{"brief_explanation":"P-Channel 30V 29A MOSFET, 18mOhm, DFN 3x3, load switch\/PWM","date_code":"","package_case":"DFN 3x3-8L with exposed pad (3.0 x 3.0 x 0.9 mm)","in_stock":6731,"datasheet":"http:\/\/www.aosmd.com\/res\/data_sheets\/AON7403.pdf","price":"$0.45 @ 1ku","product_introduction":"The AON7403 from Alpha & Omega Semiconductor is a P-channel enhancement-mode MOSFET utilizing advanced trench technology to deliver low on-resistance (18 mOhm max at VGS=-10V) and ultra-low gate charge (18 nC typical) in a compact DFN 3x3-8L package. The device is rated for -30 V drain-source voltage and -29 A continuous drain current at TC=25\u00b0C. With a 25 V gate rating, it provides robust operation in load switching and PWM applications. The AON7403L variant is halogen-free. Both variants are 100% UIS tested and RoHS compliant. Note: This part is listed as obsolete with replacement AONR21321.","working_principle":"The AON7403 is a P-channel enhancement-mode MOSFET where conduction occurs when a negative gate-source voltage exceeding the threshold (-1.7 to -3.0V) is applied, creating an inversion layer that forms a conductive channel. Current flows from source to drain (conventional direction) when the device is on. The trench technology structure enables low RDS(on) of 18 mOhm (max at VGS=-10V) by maximizing channel density. The low gate charge of 18 nC (typical at VGS=-10V) allows fast switching with minimal gate drive power. The body diode provides a path for reverse current during switching transitions, with reverse recovery time of 12 ns (typical).","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Source<\/td><td>Power<\/td><td>MOSFET source terminal<\/td><\/tr><tr><td>2<\/td><td>Source<\/td><td>Power<\/td><td>MOSFET source terminal<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Power<\/td><td>MOSFET source terminal<\/td><\/tr><tr><td>4<\/td><td>Gate<\/td><td>Input<\/td><td>MOSFET gate (control terminal)<\/td><\/tr><tr><td>5<\/td><td>Drain<\/td><td>Output<\/td><td>MOSFET drain terminal<\/td><\/tr><tr><td>6<\/td><td>Drain<\/td><td>Output<\/td><td>MOSFET drain terminal<\/td><\/tr><tr><td>7<\/td><td>Drain<\/td><td>Output<\/td><td>MOSFET drain terminal<\/td><\/tr><tr><td>8<\/td><td>Drain<\/td><td>Output<\/td><td>MOSFET drain terminal<\/td><\/tr><tr><td>Pad<\/td><td>Drain<\/td><td>Output<\/td><td>Exposed thermal pad (drain)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Battery protection and management in portable devices<\/li><li>High-side load switching in notebooks and tablets<\/li><li>Power path selection and ORing circuits<\/li><li>Motor driver H-bridge high-side switches<\/li><li>DC-DC converter synchronous rectification (P-channel)<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Alpha & Omega<\/td><td>AONR21321<\/td><td>DFN 3x3<\/td><td>Official replacement for AON7403<\/td><\/tr><tr><td>Alpha & Omega<\/td><td>AON7405<\/td><td>DFN 3x3<\/td><td>-30V, -24A, similar family<\/td><\/tr><tr><td>Vishay<\/td><td>SI4463DY<\/td><td>SO-8<\/td><td>-30V P-ch, 18A, larger package<\/td><\/tr><tr><td>Infineon<\/td><td>BSD315P<\/td><td>SOT-23-6<\/td><td>-30V P-ch, 2.5A, smaller<\/td><\/tr><tr><td>onsemi<\/td><td>FDS6575<\/td><td>SO-8<\/td><td>-30V P-ch, 10A<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6736","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6736"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6736\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6736"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6736"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6736"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6736"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}