{"id":6700,"date":"2026-06-19T01:29:29","date_gmt":"2026-06-19T01:29:29","guid":{"rendered":"https:\/\/materialparts.com\/fdd8424h\/"},"modified":"2026-06-19T01:29:29","modified_gmt":"2026-06-19T01:29:29","slug":"fdd8424h","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fdd8424h\/","title":{"rendered":"FDD8424H"},"content":{"rendered":"<h2>\u4ea7\u54c1\u6982\u89c8<\/h2>\n<p>The FDD8424H from onsemi is a dual complementary N and P-Channel enhancement mode PowerTrench MOSFET in a DPAK-5 package. The N-channel is rated 40V\/20A with 24 m\u03a9 max RDS(on), and the P-channel is rated -40V\/-20A with 54 m\u03a9 max RDS(on). Optimized for half-bridge, inverter, and H-bridge applications requiring complementary MOSFET pairs in a single package.<\/p>\n<h2>\u4e3b\u8981\u89c4\u683c<\/h2>\n<table>\n<tr>\n<td>\u914d\u7f6e<\/td>\n<td>Dual complementary (1\u00d7 N-ch + 1\u00d7 P-ch)<\/td>\n<\/tr>\n<tr>\n<td>N-Channel VDS<\/td>\n<td>40V<\/td>\n<\/tr>\n<tr>\n<td>P-Channel VDS<\/td>\n<td>-40V<\/td>\n<\/tr>\n<tr>\n<td>N-Channel ID<\/td>\n<td>20A (TC=25\u00b0C); 9A (TA=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>P-Channel ID<\/td>\n<td>-20A (TC=25\u00b0C); -6.5A (TA=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>N-Ch RDS(on) @ VGS=10V<\/td>\n<td>24 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>N-Ch RDS(on) @ VGS=4.5V<\/td>\n<td>30 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>P-Ch RDS(on) @ VGS=-10V<\/td>\n<td>54 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>P-Ch RDS(on) @ VGS=-4.5V<\/td>\n<td>70 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>N-Ch QG @ VGS=10V<\/td>\n<td>14 nC typical<\/td>\n<\/tr>\n<tr>\n<td>P-Ch QG @ VGS=-10V<\/td>\n<td>24 nC typical<\/td>\n<\/tr>\n<tr>\n<td>Ptot<\/td>\n<td>3.1W (TA), 35W (TC) combined<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-55\u00b0C \u81f3 +150\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u5305\u88c5<\/td>\n<td>DPAK-5 \/ TO-252-5<\/td>\n<\/tr>\n<\/table>\n<h2>\u7279\u70b9<\/h2>\n<ul>\n<li>Complementary N and P-channel in single DPAK-5 package<\/li>\n<li>N-channel: 40V, 24 m\u03a9, low gate charge<\/li>\n<li>P-channel: -40V, 54 m\u03a9, matched to N-channel<\/li>\n<li>PowerTrench technology for low RDS(on) and fast switching<\/li>\n<li>Common drain connection (pin 4) for half-bridge\/inverter topology<\/li>\n<li>RoHS compliant<\/li>\n<\/ul>\n<h2>\u5e94\u7528<\/h2>\n<ul>\n<li>Half-bridge and H-bridge motor drive<\/li>\n<li>Class-D audio amplifier output stage<\/li>\n<li>DC-DC converter push-pull stage<\/li>\n<li>Battery-powered inverter circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The FDD8424H from onsemi is a dual complementary N and P-Channel enhancement mode PowerTrench MOSFET in a DPAK-5 package. The N-channel is rated 40V\/20A with 24 m\u03a9 max RDS(on), and the P-channel is rated -40V\/-20A with 54 m\u03a9 max RDS(on). Optimized for half-bridge, inverter, and H-bridge applications requiring complementary MOSFET pairs in a [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,24],"tags":[],"chip_brand":[182],"class_list":["post-6700","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-microcontrollers-processors","chip_brand-onsemi"],"acf":{"brief_explanation":"Dual N+P-ch MOSFET, 40V, 24\/54m\u03a9, DPAK-5","date_code":"","package_case":"DPAK-5 \/ TO-252-5 (6.73\u00d76.22\u00d72.39 mm, 4 leads + tab)","in_stock":3000,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fdd8424h-d.pdf","price":"$0.82 @ 1ku","product_introduction":"The FDD8424H from onsemi is a dual complementary N and P-Channel PowerTrench MOSFET in a DPAK-5 package. The N-channel provides 40V\/24 m\u03a9 and the P-channel -40V\/54 m\u03a9, with common drain connection for half-bridge topology. Ideal for motor drive H-bridges, Class-D audio amplifiers, and DC-DC converter push-pull stages.","working_principle":"The FDD8424H integrates one N-channel and one P-channel enhancement mode MOSFET in a single DPAK-5 package using onsemi's PowerTrench technology. The common drain connection (pin 4, connected to the DPAK tab) is shared between both transistors, forming a natural half-bridge output node. The N-channel MOSFET (Q1) serves as the low-side or pull-down switch, while the P-channel (Q2) serves as the high-side or pull-up switch. In a typical half-bridge configuration, the load connects between the common drain (output) and a supply rail. The PowerTrench technology ensures low RDS(on) for both channels while maintaining fast switching with low gate charge. The complementary pairing eliminates the need for separate N and P-channel MOSFETs, reducing component count and board space.","pin_description":"<table>\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr>\n<tr><td>1<\/td><td>Q1 Source (N-ch)<\/td><td>Power<\/td><td>N-channel source terminal<\/td><\/tr>\n<tr><td>2<\/td><td>Q1 Gate (N-ch)<\/td><td>Input<\/td><td>N-channel gate<\/td><\/tr>\n<tr><td>3<\/td><td>Q2 Gate (P-ch)<\/td><td>Input<\/td><td>P-channel gate<\/td><\/tr>\n<tr><td>4 (tab)<\/td><td>Common Drain<\/td><td>Power<\/td><td>Shared drain of both MOSFETs (output node)<\/td><\/tr>\n<tr><td>5<\/td><td>Q2 Source (P-ch)<\/td><td>Power<\/td><td>P-channel source terminal<\/td><\/tr>\n<\/table>","application_scenarios":"<ul>\n<li>Half-bridge and H-bridge motor drive circuits<\/li>\n<li>Class-D audio amplifier output stages<\/li>\n<li>DC-DC converter push-pull and synchronous buck stages<\/li>\n<li>Battery-powered inverter and UPS circuits<\/li>\n<\/ul>","alternative_models":"<table>\n<tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr>\n<tr><td>onsemi<\/td><td>FDS8424H<\/td><td>SOIC-8<\/td><td>Same die in SOIC-8, lower power<\/td><\/tr>\n<tr><td>onsemi<\/td><td>FDD8424L<\/td><td>DPAK-5<\/td><td>Logic-level gate threshold version<\/td><\/tr>\n<tr><td>onsemi<\/td><td>FDD8433H<\/td><td>DPAK-5<\/td><td>30V version, lower RDS(on)<\/td><\/tr>\n<tr><td>Vishay<\/td><td>Si4948BEY<\/td><td>SOIC-8<\/td><td>Complementary dual MOSFET, alternative<\/td><\/tr>\n<tr><td>Infineon<\/td><td>BSC026N04LS<\/td><td>SuperSO8<\/td><td>Single N-ch, higher performance option<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6700","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6700"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6700\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6700"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6700"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6700"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6700"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}