{"id":6699,"date":"2026-06-19T01:29:28","date_gmt":"2026-06-19T01:29:28","guid":{"rendered":"https:\/\/materialparts.com\/fdd86102\/"},"modified":"2026-06-19T01:29:28","modified_gmt":"2026-06-19T01:29:28","slug":"fdd86102","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fdd86102\/","title":{"rendered":"FDD86102"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The FDD86102 from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V\/36A (Tc) with 24 m\u03a9 max on-resistance at VGS=10V in a DPAK-3 (TO-252) surface mount package. Using advanced PowerTrench technology, it achieves very low QG and QGD for fast switching, making it ideal for high-efficiency DC-DC converter and motor drive applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Channel Type<\/td>\nN-channel enhancement mode<\/td>\n<\/tr>\n
VDS (max)<\/td>\n100V<\/td>\n<\/tr>\n
ID (max)<\/td>\n36A @ TC=25\u00b0C; 8A @ TA=25\u00b0C<\/td>\n<\/tr>\n
RDS(on) @ VGS=10V<\/td>\n24 m\u03a9 max<\/td>\n<\/tr>\n
RDS(on) @ VGS=6V<\/td>\n38 m\u03a9 max<\/td>\n<\/tr>\n
VGS(th) (max)<\/td>\n4V @ ID=250\u00b5A<\/td>\n<\/tr>\n
QG (total gate charge)<\/td>\n7.6 nC typical @ VGS=4.5V; 13.4 nC @ 10V<\/td>\n<\/tr>\n
QGD<\/td>\n3.7 nC typical<\/td>\n<\/tr>\n
CISS<\/td>\n780 pF typical<\/td>\n<\/tr>\n
Ptot<\/td>\n62W @ TC=25\u00b0C; 3.1W @ TA=25\u00b0C<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to +150\u00b0C (junction)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDPAK-3 \/ TO-252-3 (SC-63)<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Shielded Gate PowerTrench technology for extremely low RDS(on)<\/li>\n
  • Very low QG and QGD compared to competing trench technologies<\/li>\n
  • 100V rating with 24 m\u03a9 RDS(on) at 10V gate drive<\/li>\n
  • Fast switching speed for high-frequency applications<\/li>\n
  • 100% UIL (Unclamped Inductive Load) tested<\/li>\n
  • High power handling in industry-standard DPAK package<\/li>\n
  • RoHS compliant<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • High-efficiency DC-DC converters (48V systems)<\/li>\n
    • Motor drive and inverter power stages<\/li>\n
    • Power supply primary-side switching<\/li>\n
    • Load switching and battery management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FDD86102 from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V\/36A (Tc) with 24 m\u03a9 max on-resistance at VGS=10V in a DPAK-3 (TO-252) surface mount package. Using advanced PowerTrench technology, it achieves very low QG and QGD for fast switching, making it ideal for high-efficiency DC-DC converter and motor drive […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,24],"tags":[],"chip_brand":[182],"class_list":["post-6699","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-microcontrollers-processors","chip_brand-onsemi"],"acf":{"brief_explanation":"N-ch MOSFET, 100V, 36A, 24m\u03a9, PowerTrench, DPAK-3","date_code":"","package_case":"DPAK-3 \/ TO-252-3 \/ SC-63 (6.54\u00d76.1\u00d72.29 mm)","in_stock":4530,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fdd86102-d.pdf","price":"$0.65 @ 1ku","product_introduction":"The FDD86102 from onsemi is an N-Channel Shielded Gate PowerTrench MOSFET rated at 100V\/36A with 24 m\u03a9 max RDS(on) at VGS=10V in a DPAK-3 package. With very low gate charge (7.6 nC @ 4.5V), fast switching, and 100% UIL tested, it is ideal for high-efficiency 48V DC-DC converters, motor drives, and power supply switching stages.","working_principle":"The FDD86102 uses onsemi's Shielded Gate PowerTrench technology, which integrates a shield electrode between the gate and drain to reduce gate-drain charge (QGD) and gate-drain capacitance (CRSS). This shielding effect dramatically reduces the Miller plateau voltage and switching losses compared to conventional trench MOSFETs. The trench gate structure provides high channel density for low RDS(on) (24 m\u03a9), while the shield electrode ensures low switching energy even at high drain-source voltages. The vertical DMOS structure supports 100V breakdown voltage with 36A current handling. The DPAK package provides good thermal performance (Rth(j-c) \u2248 2 K\/W) for surface mount power applications.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>Gate terminal<\/td><\/tr>\n
      2<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>\n
      3 (tab)<\/td>Drain<\/td>Power<\/td>Drain terminal (connected to exposed tab)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • High-efficiency DC-DC converters for 48V telecom and server power<\/li>\n
      • Motor drive and inverter power switching stages<\/li>\n
      • Power supply primary-side switching transistor<\/li>\n
      • Load switching and battery management in industrial systems<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        onsemi<\/td>FDD86102LZ<\/td>DPAK-3<\/td>Lower threshold voltage version<\/td><\/tr>\n
        onsemi<\/td>FDB86102<\/td>D2PAK-3<\/td>Higher power D2PAK package<\/td><\/tr>\n
        Infineon<\/td>IPD50N10S2L-23<\/td>DPAK<\/td>100V, 23 m\u03a9, comparable<\/td><\/tr>\n
        Vishay<\/td>IRFR3710ZPBF<\/td>DPAK<\/td>100V, 22 m\u03a9, alternative<\/td><\/tr>\n
        ST<\/td>STB120N10F7<\/td>DPAK<\/td>100V, 10 m\u03a9, lower RDS(on)<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6699","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6699"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6699\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6699"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6699"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6699"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6699"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}