{"id":6675,"date":"2026-06-19T01:11:35","date_gmt":"2026-06-19T01:11:35","guid":{"rendered":"https:\/\/materialparts.com\/stw48n60m2\/"},"modified":"2026-06-19T01:11:35","modified_gmt":"2026-06-19T01:11:35","slug":"stw48n60m2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/stw48n60m2\/","title":{"rendered":"STW48N60M2"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The STW48N60M2 from STMicroelectronics is an N-channel MDmesh M2 power MOSFET rated at 600V\/48A with 52 m\u03a9 max on-resistance. Using ST’s innovative MDmesh multiple-resurf technology, it delivers extremely low on-resistance and gate charge for high-efficiency switching in hard-switching and resonant power converter topologies. Packaged in TO-247 for high-power industrial and server power applications.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-Channel Enhancement MOSFET (MDmesh M2)<\/td>\n<\/tr>\n
VDS<\/td>\n600V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n48A @ 25\u00b0C<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n52 m\u03a9 max @ VGS=10V, 25\u00b0C<\/td>\n<\/tr>\n
VGS(th)<\/td>\n3.0V to 4.5V typical<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n88 nC total @ VDS=480V<\/td>\n<\/tr>\n
Rise Time<\/td>\n22 ns typical<\/td>\n<\/tr>\n
Fall Time<\/td>\n9 ns typical<\/td>\n<\/tr>\n
dv\/dt Immunity<\/td>\n>50 V\/ns<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n416W @ TC=25\u00b0C<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55\u00b0C to +150\u00b0C (junction)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-247<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • MDmesh M2 technology: extremely low RDS(ON) \u00d7 Qg figure of merit<\/li>\n
  • 600V drain-source voltage for offline and PFC applications<\/li>\n
  • 52 m\u03a9 max RDS(ON) at 10V gate drive<\/li>\n
  • Low gate charge (88 nC) for fast switching<\/li>\n
  • High dv\/dt immunity (>50 V\/ns) for reliability<\/li>\n
  • Zener-protected gate for ESD robustness<\/li>\n
  • 100% avalanche tested for ruggedness<\/li>\n
  • TO-247 package for high-power dissipation<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Server and telecom AC-DC power supply PFC stage<\/li>\n
    • Half-bridge and full-bridge DC-DC converters<\/li>\n
    • Solar inverter switching stage<\/li>\n
    • Welding equipment power stage<\/li>\n
    • Motor drive inverter<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The STW48N60M2 from STMicroelectronics is an N-channel MDmesh M2 power MOSFET rated at 600V\/48A with 52 m\u03a9 max on-resistance. Using ST’s innovative MDmesh multiple-resurf technology, it delivers extremely low on-resistance and gate charge for high-efficiency switching in hard-switching and resonant power converter topologies. Packaged in TO-247 for high-power industrial and server power applications. […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[142],"class_list":["post-6675","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-st"],"acf":{"brief_explanation":"N-ch MDmesh MOSFET, 600V, 48A, 52m\u03a9, TO-247","date_code":"","package_case":"TO-247 (15.7\u00d710.4\u00d74.7 mm, 2.54mm pitch, 3 pins + tab)","in_stock":1200,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/stw48n60m2.pdf","price":"$4.50 @ 1ku","product_introduction":"The STW48N60M2 from STMicroelectronics is a 600V\/48A N-channel MDmesh M2 power MOSFET with 52 m\u03a9 max RDS(ON) and 88 nC gate charge in a TO-247 package. Using ST's multiple-resurf technology for an excellent RDS(ON)\u00d7Qg figure of merit, it is designed for high-efficiency PFC, half\/full-bridge DC-DC converters, solar inverters, and server power supplies where low conduction and switching losses are critical.","working_principle":"The STW48N60M2 uses STMicroelectronics' MDmesh M2 technology, which employs a multiple-resurf process to create a densely packed vertical stripe structure. The drain region consists of multiple vertical N-type stripes with alternating P-body columns, creating a charge-balance structure that allows higher doping in the drift region without reducing breakdown voltage. This results in significantly lower RDS(ON) for a given die area compared to conventional planar MOSFETs. The charge balance also reduces the gate-drain (Miller) charge, enabling faster switching. When VGS exceeds the threshold (~3.5V), an inversion layer forms in the P-body, creating a conductive channel from source to drain. The Zener diode between gate and source protects against ESD and gate overvoltage transients.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (drive with 10-15V for lowest RDS(ON))<\/td><\/tr>\n
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab)<\/td><\/tr>\n
      3<\/td>Source<\/td>Power<\/td>MOSFET source (Kelvin source for gate drive return)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • Server and telecom AC-DC power supply PFC boost stage<\/li>\n
      • Half-bridge and full-bridge DC-DC converter primary switch<\/li>\n
      • Solar string inverter switching stage (2-5 kW)<\/li>\n
      • Welding equipment inverter power stage<\/li>\n
      • Motor drive inverter for industrial AC drives<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        ST<\/td>STW39NM60ND<\/td>TO-247<\/td>MDmesh M5, lower RDS(ON), newer generation<\/td><\/tr>\n
        Infineon<\/td>IPW60R099CPA<\/td>TO-247<\/td>CoolMOS CPA, 600V, 99m\u03a9, comparable<\/td><\/tr>\n
        ON Semi<\/td>FCH47N60F<\/td>TO-247<\/td>SuperFET II, 600V, 47m\u03a9, similar class<\/td><\/tr>\n
        ST<\/td>STF48N60M2<\/td>TO-220FP<\/td>Same die, insulated package<\/td><\/tr>\n
        Infineon<\/td>IPW60R045CPA<\/td>TO-247<\/td>CoolMOS, 45m\u03a9, higher performance<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6675","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6675"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6675\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6675"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6675"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6675"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6675"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}