{"id":6555,"date":"2026-06-18T13:52:07","date_gmt":"2026-06-18T13:52:07","guid":{"rendered":"https:\/\/materialparts.com\/2n7002q-7-f\/"},"modified":"2026-06-18T13:52:07","modified_gmt":"2026-06-18T13:52:07","slug":"2n7002q-7-f","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/2n7002q-7-f\/","title":{"rendered":"2N7002Q-7-F"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The 2N7002Q-7-F from onsemi is an N-channel enhancement-mode MOSFET with 60V drain-source voltage and 190mA continuous drain current. AEC-Q101 qualified for automotive applications, it features low threshold voltage and low on-resistance in a compact SOT-23 package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u7c7b\u578b<\/td>\nN-channel Enhancement MOSFET<\/td>\n<\/tr>\n
VDS<\/td>\n60V<\/td>\n<\/tr>\n
VGS<\/td>\n+\/-20V<\/td>\n<\/tr>\n
\u8eab\u4efd\u8bc1\uff08\u8fde\u7eed\uff09<\/td>\n190mA<\/td>\n<\/tr>\n
RDS(on)<\/td>\n1.2 Ohm (typ at VGS=10V)<\/td>\n<\/tr>\n
VGS(th)<\/td>\n1.0V to 2.5V<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nSOT-23-3<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to +150 C<\/td>\n<\/tr>\n
\u8d44\u683c<\/td>\nAEC-Q101<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • AEC-Q101 qualified for automotive<\/li>\n
  • Low threshold voltage: 1.0V min<\/li>\n
  • Low on-resistance: 1.2 Ohm typical<\/li>\n
  • Compact SOT-23-3 surface mount package<\/li>\n
  • Fully characterized avalanche voltage and current<\/li>\n
  • ESD protected gate<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Automotive low-power switching<\/li>\n
    • Logic-level load driving<\/li>\n
    • Relay and solenoid drivers<\/li>\n
    • Battery-powered applications<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The 2N7002Q-7-F from onsemi is an N-channel enhancement-mode MOSFET with 60V drain-source voltage and 190mA continuous drain current. AEC-Q101 qualified for automotive applications, it features low threshold voltage and low on-resistance in a compact SOT-23 package. Key Specifications Type N-channel Enhancement MOSFET VDS 60V VGS +\/-20V ID (continuous) 190mA RDS(on) 1.2 Ohm (typ […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,27],"tags":[],"chip_brand":[144],"class_list":["post-6555","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-microprocessors-mpu","chip_brand-on"],"acf":{"brief_explanation":"N-channel 60V 190mA MOSFET, AEC-Q101, 1.2 Ohm Ron, SOT-23-3","date_code":"","package_case":"SOT-23-3","in_stock":11315,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/2N7002L-D.PDF","price":"$0.08 @ 10ku","product_introduction":"The 2N7002Q-7-F is an N-channel enhancement-mode MOSFET from onsemi, AEC-Q101 qualified for automotive applications. With a 60V drain-source rating and 190mA continuous drain current, it is designed for low-power switching applications. The low threshold voltage (1.0V to 2.5V) enables direct drive from 3.3V or 5V logic, while the low on-resistance of 1.2 Ohm minimizes conduction losses. The compact SOT-23-3 package makes it ideal for space-constrained designs. The device is fully avalanche characterized and features ESD protection on the gate.","working_principle":"The 2N7002Q-7-F is an enhancement-mode N-channel MOSFET where current flows from drain to source when the gate-source voltage exceeds the threshold. The vertical DMOS structure provides low on-resistance and fast switching. The gate oxide is designed for a maximum VGS of +\/-20V, with ESD protection clamps to prevent oxide damage. When VGS exceeds the threshold voltage, an inversion layer forms under the gate oxide, creating a conductive channel between drain and source. The low threshold voltage allows operation from logic-level control signals.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>G<\/td>Gate<\/td><\/tr>
      2<\/td>S<\/td>Source<\/td><\/tr>
      3<\/td>D<\/td>Drain<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive logic-level load switching with 3.3V\/5V microcontroller control<\/li>
      • Relay and solenoid driver circuits in automotive body electronics<\/li>
      • Battery-powered devices needing low-threshold MOSFET switching<\/li>
      • Level translation and general-purpose digital switching<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        2N7002LT1G<\/td>onsemi<\/td>Non-automotive version<\/td><\/tr>
        2N7002K-7<\/td>onsemi<\/td>Lower RDS(on) variant<\/td><\/tr>
        BSS138<\/td>Nexperia<\/td>50V, 220mA, logic-level<\/td><\/tr>
        DMN2075U<\/td>Diodes Inc<\/td>20V, lower RDS(on)<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6555","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6555"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6555\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6555"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6555"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6555"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6555"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}