The PMF170XP from Nexperia (formerly NXP) is a 20V P-channel Trench MOSFET with 200 m\u03a9 max on-resistance at VGS=-4.5V and -1A continuous drain current in a SOT-323 (SC-70) package. Designed for low-voltage load switching and relay driving in space-constrained applications.<\/p>\n
Product Overview The PMF170XP from Nexperia (formerly NXP) is a 20V P-channel Trench MOSFET with 200 m\u03a9 max on-resistance at VGS=-4.5V and -1A continuous drain current in a SOT-323 (SC-70) package. Designed for low-voltage load switching and relay driving in space-constrained applications. Key Specifications Channel Type: P-Channel (enhancement mode) VDS: -20V VGS: \u00b112V ID: -1A […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[168],"class_list":["post-6524","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-nxp"],"acf":{"brief_explanation":"P-CH Trench MOSFET, -20V, -1A, 200m\u03a9 Ron, logic-level, 2.6nC Qg, SOT-323 (SC-70)","date_code":"","package_case":"SOT-323 (SC-70)","in_stock":11600,"datasheet":"https:\/\/www.nexperia.com\/products\/mosfets\/small-signal-mosfets\/PMF170XP.html","price":"$0.07","product_introduction":"The PMF170XP from Nexperia is a small-signal P-channel Trench MOSFET in an ultra-compact SOT-323 (SC-70) package. The device offers 200 m\u03a9 maximum on-resistance at VGS=-4.5V with only 2.6 nC total gate charge, providing an excellent figure of merit for low-voltage load switching applications. The -0.9V typical threshold voltage enables direct drive from 1.8V and 3.3V microcontrollers. The Trench MOSFET technology delivers low specific on-resistance in the tiny 2.0 x 1.25 mm package footprint, making it ideal for space-constrained portable and wearable applications. The PMF170XP complements the NX3008NBK N-channel device for complementary pair designs in half-bridge or push-pull configurations.","working_principle":"The PMF170XP uses Nexperia's Trench MOSFET technology where vertical trenches are etched into the silicon and lined with gate oxide and polysilicon to form the gate electrode. The trench structure creates a high cell density with short channel lengths, minimizing the channel resistance component of RDS(on). As a P-channel device, current flows from source to drain when the gate voltage is pulled below the source potential (negative VGS), creating an inversion layer of holes in the N-type body region. The low threshold voltage (-0.9V typical) is achieved through careful channel doping control, allowing full enhancement at VGS=-2.5V. The 2.6 nC total gate charge ensures fast switching with minimal drive power, making the device suitable for PWM-controlled load switching at frequencies up to several hundred kHz.","pin_description":"
| Pin<\/th> | Name<\/th> | Function<\/th><\/tr> | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Gate<\/td> | Gate terminal (logic-level drive)<\/td><\/tr> | ||||||||||||
| 2<\/td> | Source<\/td> | Source terminal<\/td><\/tr> | ||||||||||||
| 3<\/td> | Drain<\/td> | Drain terminal (connects to load)<\/td><\/tr><\/table>","application_scenarios":"The PMF170XP is used as a high-side load switch in battery-powered devices where the P-channel configuration eliminates the need for a charge pump. In relay driving applications, the 1A current rating and 200 m\u03a9 RDS(on) provide efficient coil switching with minimal voltage drop. For high-speed line driving, the 2.6 nC gate charge enables fast transitions. In complementary pair configurations with an N-channel MOSFET, it forms a half-bridge for bidirectional motor control or push-pull signal driving. The SC-70 package is ideal for wearable devices and other ultra-compact designs where board space is at a premium.","alternative_models":"
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