The 2N2905A from onsemi is a PNP silicon small-signal switching transistor in a TO-39 metal can package. Rated at -60V VCEO and -600mA IC, it is designed for high-speed saturated switching and general-purpose amplifier applications with an fT of 200MHz.<\/p>\n
| \u6781\u6027<\/td>\n | PNP<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| VCEO (Max)<\/td>\n | -60V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| IC (Continuous)<\/td>\n | -600\u6beb\u5b89<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| VCE(sat) Max<\/td>\n | -1.6V @ IC=-500mA<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| hFE (Min)<\/td>\n | 100 @ IC=-150mA, VCE=-10V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| fT<\/td>\n | 200 MHz<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| PD (TC=25C)<\/td>\n | 3.0W<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| RthJC<\/td>\n | 50 C\/W<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| \u5de5\u4f5c\u6e29\u5ea6<\/td>\n | -65 to +200 C<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||
| \u5305\u88c5<\/td>\n | TO-39 (Metal Can)<\/td>\n<\/tr>\n<\/table>\n\u7279\u70b9<\/h2>\n\u5e94\u7528<\/h2>\nProduct Overview The 2N2905A from onsemi is a PNP silicon small-signal switching transistor in a TO-39 metal can package. Rated at -60V VCEO and -600mA IC, it is designed for high-speed saturated switching and general-purpose amplifier applications with an fT of 200MHz. Key Specifications Polarity PNP VCEO (Max) -60V IC (Continuous) -600 mA VCE(sat) Max […]<\/p>\n","protected":false},"author":2,"featured_media":6385,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-6270","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"PNP switching transistor, -60V, -600mA, TO-39 metal can, MIL-qualified, 200MHz fT","date_code":"","package_case":"TO-39 Metal Can (9.4mm dia x 6.6mm)","in_stock":5382,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/2N2905A-D.PDF","price":"$0.30 @ 1ku","product_introduction":"The 2N2905A from onsemi is a PNP silicon planar epitaxial transistor housed in a TO-39 metal can, designed for high-speed saturated switching and general-purpose amplifier applications. With a -60V collector-emitter voltage rating, -600mA continuous collector current, and transition frequency of 200MHz, it is suitable for a wide range of switching and amplification tasks. The device is MIL-PRF-19500\/290 qualified and available in JAN, JANTX, and JANTXV screened versions for military and aerospace applications. DC current gain ranges from 100 to 300 at 150mA collector current.","working_principle":"The 2N2905A operates as a PNP bipolar junction transistor using current-controlled current amplification. **PNP Structure**: The emitter is P-type, base is N-type, and collector is P-type silicon. Conduction occurs when the base-emitter junction is forward-biased (base more negative than emitter for PNP), allowing majority carriers (holes) to flow from emitter through the thin base region to the collector. **Current Gain**: The hFE of 100-300 means that a small base current controls 100-300 times larger collector current. This amplification makes the device useful as a switch (saturated operation) or linear amplifier. **Switching Operation**: In saturated switching, the transistor is driven hard into saturation (VCE drops to -0.4V at 150mA), acting as a closed switch. Turn-on time is 45ns and turn-off time is 100ns, enabling high-speed switching. **Thermal Considerations**: The TO-39 metal can provides better thermal dissipation (RthJC=50C\/W) than plastic packages, allowing 3W dissipation at TC=25C. The 200C maximum junction temperature provides wide thermal margin.","pin_description":"
|