{"id":6252,"date":"2026-06-12T10:10:57","date_gmt":"2026-06-12T10:10:57","guid":{"rendered":"https:\/\/materialparts.com\/fqd11p06tm\/"},"modified":"2026-06-12T10:10:57","modified_gmt":"2026-06-12T10:10:57","slug":"fqd11p06tm","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fqd11p06tm\/","title":{"rendered":"FQD11P06TM"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The FQD11P06TM from onsemi is a P-Channel QFET power MOSFET rated at -60V VDSS and -9.4A ID with maximum RDS(ON) of 185mOhm. It features low gate charge (13nC typical) and 100% avalanche testing in a DPAK-3 (TO-252) surface-mount package.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS (Max)<\/td>\n-60V<\/td>\n<\/tr>\n
ID (Continuous, TC=25C)<\/td>\n-9.4A<\/td>\n<\/tr>\n
IDM (Pulse)<\/td>\n-37.6A<\/td>\n<\/tr>\n
RDS(ON) Max<\/td>\n185 mOhm @ VGS=-10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-2.0V to -4.0V<\/td>\n<\/tr>\n
Qg (Typical)<\/td>\n13 nC @ VGS=-10V<\/td>\n<\/tr>\n
Ciss (Typical)<\/td>\n420 pF<\/td>\n<\/tr>\n
Crss (Typical)<\/td>\n45 pF<\/td>\n<\/tr>\n
EAS (Single Pulse Avalanche)<\/td>\n160 mJ<\/td>\n<\/tr>\n
PD (TC=25C)<\/td>\n38W<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nDPAK-3 \/ TO-252-3<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • Low RDS(ON) of 185mOhm at VGS=-10V<\/li>\n
  • Low gate charge of 13nC for fast switching<\/li>\n
  • 100% avalanche tested for reliability<\/li>\n
  • Low Crss of 45pF for reduced Miller effect<\/li>\n
  • Optimized for LCD\/LED TV applications<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • LCD and LED TV power management<\/li>\n
    • Switching power supplies<\/li>\n
    • \u76f4\u6d41-\u76f4\u6d41\u8f6c\u6362\u5668<\/li>\n
    • Motor drive and control circuits<\/li>\n
    • Load switching and power management<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FQD11P06TM from onsemi is a P-Channel QFET power MOSFET rated at -60V VDSS and -9.4A ID with maximum RDS(ON) of 185mOhm. It features low gate charge (13nC typical) and 100% avalanche testing in a DPAK-3 (TO-252) surface-mount package. Key Specifications VDS (Max) -60V ID (Continuous, TC=25C) -9.4A IDM (Pulse) -37.6A RDS(ON) Max […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-6252","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"P-Channel -60V -9.4A MOSFET, 185mOhm RDS(on), 13nC Qg, DPAK-3, 100% avalanche tested","date_code":"","package_case":"DPAK-3 \/ TO-252-3 (6.6 x 6.0 x 2.3mm)","in_stock":10535,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/FQD11P06-D.PDF","price":"$0.38 @ 1ku","product_introduction":"The FQD11P06TM from onsemi is a P-Channel enhancement-mode power MOSFET from the QFET product line. With a drain-source voltage rating of -60V and continuous drain current of -9.4A, it features a maximum RDS(ON) of 185mOhm at VGS=-10V. The low gate charge of 13nC and low reverse transfer capacitance of 45pF enable efficient high-frequency switching. The device is 100% avalanche tested, ensuring robustness in inductive load applications. Housed in a DPAK-3 surface-mount package, it is optimized for LCD and LED TV power management applications.","working_principle":"The FQD11P06TM operates as a P-channel enhancement-mode MOSFET using vertical DMOS technology. **Channel Formation**: When a negative gate-source voltage (VGS) exceeding the threshold (-2.0V to -4.0V) is applied, an inversion layer (P-type channel) forms between the source and drain regions, allowing current to flow. The drain current is proportional to (VGS - VGS(th))^2 in the saturation region. **RDS(ON) Characteristic**: The on-resistance of 185mOhm (max) represents the total resistance from drain to source during conduction, including channel resistance, drift region resistance, and substrate resistance. Lower RDS(ON) reduces conduction losses (I^2 x RDS(ON)). **Switching Behavior**: Gate charge Qg=13nC determines the switching speed. The low Crss (45pF) minimizes the Miller effect, reducing the gate charge required during the plateau region and enabling faster turn-off. **Avalanche Capability**: 160mJ single-pulse avalanche energy rating indicates the device can absorb inductive kickback energy during unclamped inductive switching events.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      1<\/td>GATE<\/td>Gate control terminal<\/td><\/tr>
      2<\/td>DRAIN<\/td>Drain terminal (connected to tab)<\/td><\/tr>
      3<\/td>SOURCE<\/td>Source terminal<\/td><\/tr>
      Tab<\/td>DRAIN<\/td>Thermal tab, electrically connected to Drain (Pin 2)<\/td><\/tr><\/table>","application_scenarios":"
      • LCD\/LED TV: Power management switching in backlight driver and inverter circuits<\/li>
      • DC-DC Converters: High-side P-channel switch in buck and buck-boost topologies<\/li>
      • Load Switching: Battery disconnect and power path selection in portable devices<\/li>
      • Motor Control: H-bridge and half-bridge drive for brushed DC motor control<\/li>
      • Power Routing: ORing and reverse-polarity protection in redundant power systems<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        FQP11P06<\/td>onsemi<\/td>TO-220 through-hole version<\/td><\/tr>
        IRFR9310TRPBF<\/td>Infineon<\/td>-400V, -2.2A, DPAK, HV<\/td><\/tr>
        SI4435DY-T1-GE3<\/td>Vishay<\/td>-30V, -8.5A, SOIC-8<\/td><\/tr>
        AOD4185<\/td>Alpha & Omega<\/td>-40V, -12A, DPAK<\/td><\/tr>
        FDS4435A<\/td>onsemi<\/td>-30V, -7.5A, SOIC-8<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6252","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=6252"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/6252\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=6252"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=6252"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=6252"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=6252"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}