{"id":5427,"date":"2026-06-10T01:53:20","date_gmt":"2026-06-10T01:53:20","guid":{"rendered":"https:\/\/materialparts.com\/fgl60n100bntdtu\/"},"modified":"2026-06-10T01:53:20","modified_gmt":"2026-06-10T01:53:20","slug":"fgl60n100bntdtu","status":"publish","type":"post","link":"https:\/\/materialparts.com\/zh\/fgl60n100bntdtu\/","title":{"rendered":"FGL60N100BNTDTU"},"content":{"rendered":"

\u4ea7\u54c1\u6982\u89c8<\/h2>\n

The FGL60N100BNTDTU from onsemi is a 1000V, 60A NPT trench IGBT with integrated anti-parallel fast recovery diode in a TO-264-3 through-hole package. With VCE(sat) of 2.5V at 60A and 275nC gate charge, it is optimized for hard-switching applications such as UPS and welder power stages.<\/p>\n

\u4e3b\u8981\u89c4\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VCE(sat)<\/td>\n1000 V<\/td>\n<\/tr>\n
IC (Continuous)<\/td>\n60 A @ TC=25C<\/td>\n<\/tr>\n
IC (Pulse)<\/td>\n120 A<\/td>\n<\/tr>\n
VCE(sat)<\/td>\n2.5V typical @ IC=60A, VGE=15V<\/td>\n<\/tr>\n
VCE(sat) Max<\/td>\n2.9V @ IC=60A, VGE=15V<\/td>\n<\/tr>\n
Gate Charge (QG)<\/td>\n275 nC<\/td>\n<\/tr>\n
Turn-On Delay<\/td>\n140 ns<\/td>\n<\/tr>\n
Turn-Off Delay<\/td>\n630 ns<\/td>\n<\/tr>\n
Reverse Recovery Time (trr)<\/td>\n1.2 us<\/td>\n<\/tr>\n
\u529f\u7387\u8017\u6563<\/td>\n180 W @ TC=25C<\/td>\n<\/tr>\n
\u5de5\u4f5c\u6e29\u5ea6<\/td>\n-55 to +150 C (TJ)<\/td>\n<\/tr>\n
\u5305\u88c5<\/td>\nTO-264-3<\/td>\n<\/tr>\n<\/table>\n

\u7279\u70b9<\/h2>\n
    \n
  • 1000V NPT trench IGBT technology<\/li>\n
  • 60A continuous collector current<\/li>\n
  • VCE(sat) = 2.5V typical at 60A<\/li>\n
  • Integrated anti-parallel fast recovery diode<\/li>\n
  • 275nC gate charge for moderate drive requirements<\/li>\n
  • High avalanche ruggedness<\/li>\n
  • Easy parallel operation due to positive VCE(sat) tempco<\/li>\n
  • Optimized for hard switching applications<\/li>\n<\/ul>\n

    \u5e94\u7528<\/h2>\n
      \n
    • Uninterruptible power supplies (UPS)<\/li>\n
    • Welding equipment<\/li>\n
    • Motor drive inverters<\/li>\n
    • Induction heating<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FGL60N100BNTDTU from onsemi is a 1000V, 60A NPT trench IGBT with integrated anti-parallel fast recovery diode in a TO-264-3 through-hole package. With VCE(sat) of 2.5V at 60A and 275nC gate charge, it is optimized for hard-switching applications such as UPS and welder power stages. Key Specifications VCE(sat) 1000 V IC (Continuous) 60 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-5427","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"1000V 60A NPT trench IGBT, 2.5V Vcesat, co-pack diode, TO-264","date_code":"","package_case":"TO-264-3 (20.0 x 5.3 x 26.0 mm)","in_stock":1718,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/FGL60N100BNTD-D.PDF","price":"$4.50 @ 1ku","product_introduction":"The FGL60N100BNTDTU from onsemi (formerly Fairchild) is a 1000V, 60A NPT (Non-Punch-Through) trench IGBT with an integrated anti-parallel fast recovery diode in a TO-264-3 through-hole package. The TD suffix denotes tube packaging. Using onsemi's proprietary trench design and advanced NPT technology, it offers VCE(sat) of 2.5V typical at IC=60A with positive temperature coefficient for easy paralleling. The co-packaged anti-parallel diode with 1.2us reverse recovery time enables use in half-bridge and full-bridge inverter topologies without external freewheeling diodes. The device is optimized for hard-switching applications with high avalanche ruggedness. Note: This device is marked as Not For New Designs (NFND) on the onsemi website.","working_principle":"The FGL60N100BNTD operates through three subsystems: (1) NPT Trench IGBT Structure: A Non-Punch-Through trench gate structure provides 1000V blocking capability with low VCE(sat) of 2.5V at 60A. The trench gate geometry increases channel density compared to planar structures, reducing on-state voltage drop. The NPT construction provides a positive temperature coefficient of VCE(sat), ensuring current sharing when multiple devices are paralleled. (2) Anti-Parallel Diode: An integrated fast recovery diode is co-packaged with the IGBT die, providing a freewheeling current path for inductive loads. The 1.2us reverse recovery time and soft recovery characteristic minimize switching losses and EMI in bridge topologies. (3) Switching Behavior: Turn-on delay is 140ns and turn-off delay is 630ns at 600V\/60A with 51Ohm gate resistance. The 275nC gate charge requires a moderate gate driver. The IGBT exhibits tail current during turn-off (characteristic of NPT technology), which contributes to turn-off switching losses.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Description<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input (VGE max +\/-25V)<\/td><\/tr>
      2<\/td>Collector<\/td>Power<\/td>Collector terminal (connected to tab)<\/td><\/tr>
      3<\/td>Emitter<\/td>Power<\/td>Emitter terminal<\/td><\/tr>
      Tab<\/td>Collector<\/td>Power<\/td>Collector (heatsink mount)<\/td><\/tr><\/table>","application_scenarios":"
      • UPS inverter half-bridge with 1000V\/60A rating and co-packaged anti-parallel diode<\/li>
      • Welding power supply with 2.5V low VCE(sat) at 60A minimizing conduction losses<\/li>
      • Motor drive inverter with positive VCE(sat) tempco enabling easy parallel operation<\/li>
      • Induction heating power stage with high avalanche ruggedness and 1.2us fast recovery diode<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VCE<\/th>IC<\/th>Notes<\/th><\/tr>
        FGH60N60SMD<\/td>onsemi<\/td>600V<\/td>60A<\/td>Lower voltage, faster<\/td><\/tr>
        IKW75N120T2<\/td>Infineon<\/td>1200V<\/td>75A<\/td>Higher voltage\/current<\/td><\/tr>
        STGWA40M120DF3<\/td>ST<\/td>1200V<\/td>40A<\/td>Mesa trench IGBT<\/td><\/tr>
        FGA60N65SMD<\/td>onsemi<\/td>650V<\/td>60A<\/td>Field-stop, faster switch<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/5427","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/comments?post=5427"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/posts\/5427\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/media?parent=5427"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/categories?post=5427"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/tags?post=5427"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/zh\/wp-json\/wp\/v2\/chip_brand?post=5427"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}